ECEV1HA Search Results

ECEV0GA221P

Abstract: ECEV1CAS100R ECE-V1HAS010R ECEV1EA100P ECEV1AA220P ECEV1CA220P ECEV1EA4R7R ECE-V1CA470P
Contextual Info: Aluminum Electrolytic Capacitors Surface Mount Type VA Series VA Series Features • ■ ■ ■ ■ fj For general purpose Life: 1000 hours at 85’C 03-6.3 x 6mm products Excellent space factor Bi-polar type is available on request p w ^ ^ ^ k j - o v j

eee-1ha470xp

Abstract: EEE-0JS220WR EEE1EA221P EEE1CS100SR EEE1CA101WP EEE1HS010SR EEE0JA101SP EEE1EA221UP EEE1EA471P EEE1HA101UP
Contextual Info: NOT RECOMMENDED FOR NEW DESIGN NOTICE SUBJECT: V-S series Surface Mount Type Aluminum Electrolytic Capacitors ECE-V parts BULLETIN #: NRFND.PG44.06.05.09-6 Date: June 5, 2009 Page 1 of 6 Details: V-S series Non-RoHS Surface Mount Type Aluminum Electrolytic

MGE 3200 rt

Abstract: CS15 RCA intel 945 motherboard schematic diagram professional audio mixer schematics C5859 QSound Q1 pc motherboard schematics mono preamplifier circuit diagram C6869 33078
Contextual Info: ~\ CS4238B A Cirrus Logic Company Advanced Audio System with 3D Sound Integrated QSOUND General Description 3D Sound Technology Compatible with Sound Blaster , Sound Blaster Pro , and Windows Sound System Advanced MPC3-Compliant Input and Output Mixer Enhanced Stereo Full Duplex Operation

EI -40C

Contextual Info: RF3933 90W GaN WIDE-BAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical

Murata grm40

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 6, 5/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage

Contextual Info: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features  Advanced GaN HEMT Technology  Typical Peak Modulated Power >240W  Advanced Heat Sink Technology  Single Circuit for 865MHz To

Contextual Info: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology

RFG1M20180

Abstract: ATC800B820JT
Contextual Info: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to

Contextual Info: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband  Single Circuit for 225 - 450MHz  48V Modulated Typical

RFG1M20180SB

Abstract: j35 fet RFG1M20180SQ
Contextual Info: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to

Contextual Info: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz

Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical

ATC800A

Abstract: RF3931 ER35
Contextual Info: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features „ „ „ „ „ „ Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance - Output Power 30W at P3dB

Contextual Info: RFG1M20180 RFG1M20180 1.8 GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT technology Typical peak modulated power>180W Advanced heat-sink technology Single circuit for 1.8GHz to

Contextual Info: RFG1M20090 RFG1M20090 90W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20090 is optimized for commercial infrastructure, military communication, and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed

Contextual Info: RF3933 RF3933 90W GaN Wideband Power Amplifier The RF3933 is a 48V, 90W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier

Contextual Info: RF3934 RF3934 120W GaN Wideband Power Amplifier The RF3934 is a 48V 120W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier

Contextual Info: RFG1M20180 RFG1M20180 180W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20180 is optimized for commercial infrastructure applications in the 1.8GHz to 2.2GHz frequency band, ideal for WCDMA and LTE applications. Using an advanced 48V high power density gallium nitride GaN semiconductor process optimized for high

SMD diode sg 46

Abstract: 1n4148 zener diode SG 46 a DIODE SMD RK73H1JT1001F WECO filter C3216X7R2J223KT0L0U Y2 diode SG 21 DIODE SMD cl31b zener diode 15v
Contextual Info: PRELIMINARY PFM V•I Chip PFM Power Factor Module • • • • • • • • • F3D480T20A DC+ Input: rectified 120/240 Vac sinusoidal Output: 48 Vdc programmable Output power: Up to 200 W 4,242 Vdc reinforced insulation 90% efficiency 375 W/in3 power density

104K capacitor

Abstract: GRM39-X7R-104K-16 Harwin 104K 16v capacitor 104k 50v 1uf, 16v electrolytic capacitor GRM39X7R104K16 murata x7r capacitor 0603 M20-9770306 104K
Contextual Info: STEVAL-CCA002V1 Bill of Materials April 2007 Designator C1 C2 C3 C4 C5 Cn1 Cn2 Cn3 Cn4 Cn5 Cn6 Cn7 Cn8 J1 J2 Footprint 0603 0603 Size code B see pdf file Size code B (see pdf file) 0603 Vertical SIP2 pitch 2.54mm (see pdf file) Vertical SIP2 pitch 2.54mm (see pdf file)

AN1977

Abstract: AN1987 GRM40 MHVIC915R2 020C Circuit Diagram Panasonic Model DIM 74
Contextual Info: Freescale Semiconductor Technical Data MHVIC915R2 Rev. 4, 12/2004 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage

ECEV1AA100NR

Abstract: EE30 ECEV0GA101SR ECEV0GA221SP ECEV0GA330SR ECEV0GA331WP ECEV0GA470SR ECEV0GS220SR ECEV0JA220SR ECEV0JA330WR
Contextual Info: Aluminum Electrolytic Capacitor/S Surface Mount Type Series: S Type : V • Features Endurance : 85°C 2000 h 5.5 mm < φ6.3 height ■ Specifications Category temp. range - 40 to + 85°C Rated W.V. Range 4 to 100 V .DC Nominal Cap. Range 0.1 to 1500 µ F

GM 950 motorola

Abstract: A113 ECEV1HA100SP GRM40 GRM42 MHVIC915 MHVIC915R2 198MHz
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier Freescale Semiconductor, Inc. The MHVIC915R2 wideband integrated circuit is designed for CDMA and

SCHEMATIC IGNITION WITH IGBTS

Abstract: IRGS14C40L SCHEMATIC IGNITION iGBT KIT33810EKEVME 12 volt cd ignition schematic C0603X7R500104KNE a26544 Pinout Diagram for igbt flash rsn 311 USB 2.0 - SPI Flash Programmer schematic
Contextual Info: Freescale Semiconductor User’s Guide Document Number: KT33810UG Rev. 3.0, 5/2010 KIT33810EKEVME Evaluation Board User’s Guide Figure 1. KT33810 Evaluation Board Table of Contents 1 Important Notice . 2