EC2612 PHEMT Search Results

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Untitled Abstract: No abstract text available Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm	Original	PDF	EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Mar-00
EC2612 Abstract: ec2612 pHEMT MAR 618 transistor Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm	Original	PDF	EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Mar-00 ec2612 pHEMT MAR 618 transistor
pHEMT transistor 30GHz Abstract: EC2612 ec2612 pHEMT 158467 Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low	Original	PDF	EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Marc-00 pHEMT transistor 30GHz ec2612 pHEMT 158467
ec2612 pHEMT Abstract: pHEMT transistor 30GHz EC2612 TRANSISTOR 30GHZ Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron mobility transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low	Original	PDF	EC2612 40GHz EC2612 18GHz 40GHz DSEC26128099 ec2612 pHEMT pHEMT transistor 30GHz TRANSISTOR 30GHZ
ec2612 phemt Abstract: pHEMT transistor 30GHz EC2612 MAR 618 transistor LS 9814 Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm	Original	PDF	EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Mar-00 ec2612 phemt pHEMT transistor 30GHz MAR 618 transistor LS 9814
ec2612 phemt Abstract: EC2612 Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor ¦ Chip size : 0.63 x 0.37 x 0.1 mm Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm	Original	PDF	EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Marc-00 ec2612 phemt