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United Monolithic Semiconductors EC2612-99S RF SMALL SIGNAL TRANSISTOR PHEMT
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Richardson RFPD	EC2612-99S				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
United Monolithic Semiconductors EC2612-99F RF SMALL SIGNAL TRANSISTOR PHEMT
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Richardson RFPD	EC2612-99F				100	1 - 10 - 100 $14.4 1000 $14.4 10000 $14.4	Buy Now
Sensata Circuit Breakers APGN1-1REC2-61-262 Circuit Breakers
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Sager	APGN1-1REC2-61-262					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Sensata Circuit Breakers UPG1-1REC2-61-202-A-00 Circuit Breakers
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Sager	UPG1-1REC2-61-202-A-00					1 - 10 - 100 - 1000 - 10000 -	Buy Now

EC2612 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
EC2612		United Monolithic Semiconductors	40GHz Super Low Noise PHEMT		Original	PDF
EC2612-99F/00		United Monolithic Semiconductors	40GHz Super Low Noise PHEMT		Original	PDF
EC2612-99F/00		United Monolithic Semiconductors	40GHz superlow noise PHEMT		Original	PDF
EC2612-99X/00		United Monolithic Semiconductors	40GHz Super Low Noise PHEMT Pseudomorphic High Electron mobility transistor		Original	PDF

EC2612 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ec2612 phemt Abstract: EC2612 Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor ¦ Chip size : 0.63 x 0.37 x 0.1 mm Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm	Original	PDF	EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Marc-00 ec2612 phemt
ec2612 phemt Abstract: pHEMT transistor 30GHz EC2612 MAR 618 transistor LS 9814 Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm	Original	PDF	EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Mar-00 ec2612 phemt pHEMT transistor 30GHz MAR 618 transistor LS 9814
Untitled Abstract: No abstract text available Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm	Original	PDF	EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Mar-00
pHEMT transistor 30GHz Abstract: EC2612 ec2612 pHEMT 158467 Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low	Original	PDF	EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Marc-00 pHEMT transistor 30GHz ec2612 pHEMT 158467
EC2612 Abstract: ec2612 pHEMT MAR 618 transistor Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm	Original	PDF	EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Mar-00 ec2612 pHEMT MAR 618 transistor
ec2612 pHEMT Abstract: pHEMT transistor 30GHz EC2612 TRANSISTOR 30GHZ Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron mobility transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low	Original	PDF	EC2612 40GHz EC2612 18GHz 40GHz DSEC26128099 ec2612 pHEMT pHEMT transistor 30GHz TRANSISTOR 30GHZ
PPH25X Abstract: No abstract text available Text: Contents Products . 3 Foundry open processes. 12 GaN current packaging solutions and demo boards. 14	Original	PDF