EARF Search Results
EARF Price and Stock
LeaderTech EA-RF500-24RF FERRITE SHEET 24"X24" |
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EA-RF500-24 | Bulk | 10 | 1 |
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EA-RF500-24 | 1 |
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LeaderTech EA-RF375-24RF FERRITE SHEET 24"X24" |
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EA-RF375-24 | Bulk | 1 |
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EA-RF375-24 | 15 |
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LeaderTech EA-RF750-24RF FERRITE SHEET 24"X24" |
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EA-RF750-24 | Bulk | 1 |
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EA-RF750-24 | 3 |
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LeaderTech EA-RF1000-24RF FERRITE SHEET 24"X24" |
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EA-RF1000-24 | Bulk | 1 |
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EA-RF1000-24 |
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LeaderTech EA-RF1250-24RF FERRITE SHEET 24"X24" |
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EA-RF1250-24 | Bulk | 1 |
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EA-RF1250-24 |
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EARF Datasheets (5)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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EA-RF1000-24 | Leader Tech | RF/IF and RFID - RFI and EMI - Shielding and Absorbing Materials - RETICULATED FOAM ABSORBER - 1 GH | Original | |||
EA-RF1250-24 | Leader Tech | RF/IF and RFID - RFI and EMI - Shielding and Absorbing Materials - RETICULATED FOAM ABSORBER - 1 GH | Original | |||
EA-RF375-24 | Leader Tech | RF/IF and RFID - RFI and EMI - Shielding and Absorbing Materials - RETICULATED FOAM ABSORBER - 1 GH | Original | |||
EA-RF500-24 | Leader Tech | RF/IF and RFID - RFI and EMI - Shielding and Absorbing Materials - RETICULATED FOAM ABSORBER - 1 GH | Original | |||
EA-RF750-24 | Leader Tech | RF/IF and RFID - RFI and EMI - Shielding and Absorbing Materials - RETICULATED FOAM ABSORBER - 1 GH | Original |
EARF Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 168pin unbuffered DIMM Module with serial presence detect • 168 Pin JE D E C Standard, Unbuffered 8 Byte Dual In-Line Memory Module |
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64-Bit 72-Bit 168pin HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 V1605/45GU-50/-60 | |
IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
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a to d converter interface with 8051
Abstract: CS5503-AP AMV dc-dc BPL TV POWER SUPPLY circuit MCS51 CS5501 CS5503 2N7000 B15 2392 vfc
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CS5501 CS5503 20-Bit CS5501: 16-Bit CS5503: 10M-W a to d converter interface with 8051 CS5503-AP AMV dc-dc BPL TV POWER SUPPLY circuit MCS51 CS5503 2N7000 B15 2392 vfc | |
Contextual Info: •HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating |
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HY5116400 1AD02-10-APR93 HY5116400JC HY5116400LJC HY5116400TC HY5116400LTC | |
SPRU131
Abstract: TMS320 XDS510 XDS510PP XDS510WS SPRU103
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TMS320C54x SPRU099C SPRU131 TMS320 XDS510 XDS510PP XDS510WS SPRU103 | |
SPRU099
Abstract: SPRU103 TMS320 mp 1009e SPRU099A
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TMS320C5xx SPRU099A SPRU099 TMS320C5x SPRU099 SPRU103 TMS320 mp 1009e SPRU099A | |
SPRU189
Abstract: SPRU190 XDS510
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TMS320C6x SPRU188D SPRU189 SPRU190 XDS510 | |
nec v53 cpuContextual Info: NEC NEC Electronics Inc. Description The V53” is a high-speed, high-integration 16-bit CMOS microprocessor with a CPU that is object and source code compatible with the V20 /V30®. Integrated on the same die is a 4-channel DMA controller, a UART, three |
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16-bit nPD71087/8237 /iPD71071. jiPD71051 PPD70236 nec v53 cpu | |
Contextual Info: March 1994 DATA SHEET_ M 67024 4 K X 16 CMOS DUAL PORT RAM FEATURES . FAST ACCESS TIME: 35 NS TO 55 NS 30 NS PRELIMINARY FOR COMMERCIAL ONLY . WIDE TEMPERATURE RANGE: -5 5 ° C T O + 125°C . 67024 L LOW POWER 67024 V VERY LOW POWER |
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67024/Rev | |
Contextual Info: T M S 551 60, T M S 551 61, T M S 551 70, T M S 5 5 1 71 2 6 21 44 BY 16-BIT M U L T IP O R T VIDEO RAMS S M V S 4 6 4 -MARCHI 996 + Organization: • 1 DRAM: 262144 Words S A M : 256 W o r d s • • x 16 B i t s D a t a f ro m t h e D R A M to O n e - H a l f o f t he |
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16-BIT | |
MARKING code F050
Abstract: all stk ic diagram stk ic 5.1 circuit diagram C209 TMS320 TMS320C203 TMS320C209
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TMS320C2xx SPRU151 Index-20 MARKING code F050 all stk ic diagram stk ic 5.1 circuit diagram C209 TMS320 TMS320C203 TMS320C209 | |
dbam connector
Abstract: cga motorola code marking NEC MC-5* NEC MCFM MARK mark sheet format 10th SPRA021 SPRU035 TMS320 TMS320C30
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TMS320C3x SPRU053 TMS320C3x Index-21 Index-22 dbam connector cga motorola code marking NEC MC-5* NEC MCFM MARK mark sheet format 10th SPRA021 SPRU035 TMS320 TMS320C30 | |
TMS320C27
Abstract: 0x000401
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TMS320C27xx SPRU214B Index-17 Index-18 TMS320C27 0x000401 | |
manual for Misa
Abstract: ruy 1015
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Am486TMDX/DX2 for088-3453 Ban-3M-3/97-3 7965A manual for Misa ruy 1015 | |
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Contextual Info: KMM374F203BK KMM374F213BK DRAM MODULE KMM374F203BK & KMM374F213BK EDO Mode without buffer 2Mx72 DRAM DIMM with ECC based on 2Mx8, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F20 1 3B is a 2M bit x 72 Dynamic RAM high density memory module. The |
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KMM374F203BK KMM374F213BK KMM374F213BK 2Mx72 KMM374F20 300mil 168-pin | |
NJM386D
Abstract: circuit radio am NJM386M
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NJM386 NJM386D NJM386M 26clB NJM386D circuit radio am NJM386M | |
MH8M36DJContextual Info: MITSUBISHI LSIs REV 2.1 APR.25.1996 MH8M36DJ/DNJ-5,-6,-7 Ì V FAST PAGE MODE 301989888-BIT 8388608 - WORD BY 36-BIT DYNAMIC RAM MODULE DESCRIPTION The MH8M36DJ/DNJ is 8388608 - word by 36 - bit dynamic RAM module . That module consists ot sixteen industry 4M x 4 dynamic |
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MH8M36DJ/DNJ-5 301989888-BIT 36-BIT) MH8M36DJ/DNJ MIT-DS-182-0 Mar/11/ MH8M36DJ | |
Contextual Info: P re lim ina ry Spec MITSUBISHI LSIs MH1 V645C W XPJ-6,-7 HYPER PAGE MODE 4194304-BIT 1048576-BIT BY 64-BIT DYNAMIC RAM DESCRIPTION The 1Mx64bit module is 1048576-word x 64-bit dynamic ram module. This consist of four industry standard 1M x 16 dynamic RAMs in SOJ and one industry standard |
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V645C 4194304-BIT 1048576-BIT 64-BIT) 1Mx64bit 1048576-word 64-bit MIT-DS-0030-1 24/Mar | |
Contextual Info: M ITS U B IS H I LSlS M5M467800/465800AJ,TP-5,-6,-5S,-6S FAST PAGE MODE 67108864-BIT 83886Q8-WORD BY 8-BIT DYNAMIC RAM DESCRIPTION This is a family of 8388608-word by 8-bit dynamic RAMs, fabricated with the high performance CMOS process,and is ideal for large-capacity memory systems where high speed, low power |
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M5M467800/465800AJ 67108864-BIT 83886Q8-WORD 8388608-word 8388608-WQRP | |
shaft current
Abstract: RXKH
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TMS320C203
Abstract: TMS320C209 MARKING code F050 ifr 1520
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TMS320C2xx SPRU151 D412006 65121b 65121c 65121d 65121e 65121f 65121g 65121h TMS320C203 TMS320C209 MARKING code F050 ifr 1520 | |
TMS320
Abstract: TMS320C50 TMS320C51 TMS320C52 TMS320C53 energy meter circuit diagram darm stk 413 430 mda dsp tms320c50
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TMS320C5x SPRU055B TMS320C5x TMS320 TMS320C50 TMS320C51 TMS320C52 TMS320C53 energy meter circuit diagram darm stk 413 430 mda dsp tms320c50 | |
Contextual Info: fax id: 5221 CYPRESS CY7C027/028 CY7C037/038 PRELIMINARY 32K/64KX 16/18 Dual-Port Static RAM Features • Fully asynchronous operation • Automatic power-down • True Dual-Ported m emory cells which allow simulta neous access of the same memory location |
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CY7C027/028 CY7C037/038 32K/64KX CY7C027) CY7C028) CY7C037) CY7C038) 35-micron CY7C037-15AC CY7C037-15AI | |
Contextual Info: fax id: 5213 C Y 7 C 0 2 4 V /0 2 5 V /0 2 6 V CYPRESS PRELIMINARY C Y 7 C 0 2 4 1 V /0 2 5 1 V /0 3 6 V 3.3V 4K/8K/16KX 16/18 Dual-Port Static RAM Featu res • Automatic power-down • Expandable data bus to 32/36 bits or more using Mas ter/Slave chip select when using m ore than one device |
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4K/8K/16KX 100-pln IDT70V24, 70V25, 7V0261 100-Pin CY7C0251V-15AC CY7C0251V-25AC CY7C0251V-25AI |