Untitled
Abstract: No abstract text available
Text: EA-PS 9000 3U 3.3KW - 150KW HOCHLEISTUNGS-DC-LABORNETZGERÄTE / HEAVY DUTY LABORATORY DC POWER SUPPLIES EA-PS 9080-340 3U hh Mehrphaseneingang 340.460VAC hh Hoher Wirkungsgrad bis 95,5% hh Ausgangsleistungen: 0.3,3kW, 0.5kW, 0.6,6kW, hh Multi-phase input 340.460VAC
|
Original
|
150KW
460VAC
V30kg
300kHz,
20MHz
20MHz
|
PDF
|
5KW PFC
Abstract: PFC 6kw PFC 2.5kw PFC 5kw PFC 3kw designed PFC 5kw pfc 3000w PFC 1.5kw EA-PS 9000 3000W power supply
Text: PROGAMMIERBARE LABORNETZGERÄTE / PROGRAMMABLE LABORATORY POWER SUPPLIES EA-PSI 9080-50 Programmierbare Netzgeräte Die Geräteserie EA-PSI 9000 ist eine Weiterentwicklung der Serie EA-PS 9000. Das neuartige Konzept der Leistungsstufe bietet dem Anwender sowohl
|
Original
|
001ms.
2000m
5KW PFC
PFC 6kw
PFC 2.5kw
PFC 5kw
PFC 3kw
designed PFC 5kw
pfc 3000w
PFC 1.5kw
EA-PS 9000
3000W power supply
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EA-PS 9000 2U 1000W - 3000W PROGRAMMIERBARE DC-LABORNETZGERÄTE / PROGRAMMABLE LABORATORY DC POWER SUPPLIES EA-PS 9080-60 2U hh hh hh hh hh hh hh hh hh hh hh hh hh hh hh 46 Weiteingangsbereich 90.264V, mit aktiver PFC Hoher Wirkungsgrad bis 93% Ausgangsleistungen: 0.1000W bis 0.3000W
|
Original
|
300kHz,
20MHz
|
PDF
|
EA-PS
Abstract: EA-PS 9000 15-POL 650-watt 9032-20 GROB 903-220
Text: Die neuen getakteten Labornetzgeräte Serie EA-PS 9000 q q q q q q q q q q q q q q q q Ausgangsleistung 320W, 650W, PFC bei 650Watt Ausgangsspannung 0.16V, 0.32V und 0.65V Ausgangsstrom 5 bis 40A Labor- und Systemanwendungen, Primär getaktet Ausgangsspannung kont. einstellbar, grob und fein
|
Original
|
650Watt
100mA
500mA
100mV
250mA
100mA
EA-PS
EA-PS 9000
15-POL
650-watt
9032-20
GROB
903-220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ByteBlaster Parallel Port Download Cable J a n u a r y 1998, ver. 2 D ata S h e e t Features • ■ Functional Description A llow s PC u sers to perform th e follow ing functions: P rogram MAX 9000, MAX 7000S, an d MAX 7Û00A devices in-system via a sta n d ard parallel p o rt
|
OCR Scan
|
7000S,
25-pin
10-pin
|
PDF
|
Ericsson AB PGR 20312
Abstract: DFB ea InGaAs APD, 10 Gb/s, -30 dBm 20312 pgr optical supervisory channel 10 gb laser diode Ea 1530 A mini link ericsson Ericsson Power Modules stm-64 dfb
Text: Ericsson Microelectronics Optoelectronic Products Ericsson is a world-leading supplier in the fast growing and dynamic telecommunications and data communications industry; offering advanced solutions for mobile and fixed networks and terminals. Our products and solutions meet communications needs in the home and
|
Original
|
SE-164
Ericsson AB PGR 20312
DFB ea
InGaAs APD, 10 Gb/s, -30 dBm
20312 pgr
optical supervisory channel
10 gb laser diode
Ea 1530 A
mini link ericsson
Ericsson Power Modules
stm-64 dfb
|
PDF
|
EA ELEKTRO-AUTOMATIK
Abstract: 232-C IEEE488 DE-41747 eurocard
Text: Bedienungsanleitung Operation manual IEEE 488.2 / RS232 Interface EA-PSP 5612 Art.-Nr.: 33100153 EA Elektro-Automatik, DE-41747 Viersen, Helmholtzstr. 31-33, 02162-3785-0, Fax 02162-16230 2 Inhalt / Index Deutsch Technische Daten 1. Einleitung 1.1 Grundlegendes zur Benutzung
|
Original
|
RS232
DE-41747
25polig
PS9000
EA ELEKTRO-AUTOMATIK
232-C
IEEE488
eurocard
|
PDF
|
termistor 10k
Abstract: 1522-PGT
Text: PGT 203 06 Optical Transmitter Submodule for 2.5 Gbps The transmitter module, intended for D-WDM applications at OC-48/STM16, consists of a DFB laser with integrated absorption modulator mounted in a high speed package including isolator. 7 1 10k TEC Features
|
Original
|
OC-48/STM16,
1522-PGT
termistor 10k
|
PDF
|
STM-16
Abstract: No abstract text available
Text: PGT 203 06 DFB/EA Laser Module 2.5 Gb/s Applications Key Features • 1550 nm DFB CW source monolithicly integrated with an Electro Absorptionmodulator EA • Hermetic, 14 pin butterfly package • Single-mode fiber pigtail • 4 GHz typical bandwidth • –3 dBm output power
|
Original
|
OC-48/
STM-16,
SE-164
1522-PGT
STM-16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PGT 203 27 DFB/EA Laser Module for 2.5 Gb/s Applications Key Features • L-band DFB CW source monolithicly integrated with an Electro Absorptionmodulator EA • Hermetic, 14 pin butterfly package • Single-mode fiber pigtail • 4 GHz typical bandwidth
|
Original
|
OC-48/STM16,
SE-164
1522-PGT
|
PDF
|
DFB ea
Abstract: Ea 1530 A
Text: PGT 203 06 DFB/EA Laser Module for 2.5 Gb/s Applications Key Features • 1550 nm DFB CW source monolithicly integrated with an Electro Absorptionmodulator EA • Hermetic, 14 pin butterfly package • Single-mode fiber pigtail • 4 GHz typical bandwidth
|
Original
|
OC-48/STM-16,
SE-164
1522-PGT
DFB ea
Ea 1530 A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SERIES 3188 Aluminum Electrolytic Capacitors Long-Life Com puter-Grade Aluminum Electrolytic Capacitors DESCRIPTION: Series 3 1 8 8 Long-Life Aluminum Electrolytic Capacitors are designed for those applications where a standard com puter-grade product must
|
OCR Scan
|
|
PDF
|
ilq 074
Abstract: 40312
Text: OXLEY = P \= BIPOLAR MULTI-CHIP LAMP RANGE FEATURES • 6 - chip array fo r high intensity output • bipolar d.c. or a.c. operation • w ide view ing angle • sunlight readable • rugged glass/m etal co n stru ctio n • sealed to BS 5490 IP67 • high reliability - 100%
|
OCR Scan
|
MIL-l-45208
ilq 074
40312
|
PDF
|
E2495
Abstract: No abstract text available
Text: Discontinued Product—Support Information Only This literature was published years prior to the establishment of Agilent Technologies as a company independent from Hewlett-Packard and describes products or services now available through Agilent. It may also refer to products/services no longer supported by Agilent.
|
Original
|
1660C/CS/CP-Series
17-21/F
5964-3664E
E2495
|
PDF
|
|
2CSC400002D0903
Abstract: 2CSG210200R1211 ABB E 257 C30-230 S465502 2CSG035100R1211 2CSG210100R1211 ABB SACE sn 125 EA1733 LCD TV SCHEMA S550284
Text: Catalogo tecnico System pro M compact System pro M Interruttori magnetotermici, differenziali e apparecchi modulari per impianti in bassa tensione System pro M compact® - System pro M Per tener conto dell’evoluzione delle Norme e dei materiali, le caratteristiche e le dimensioni di ingombro indicate nel presente
|
Original
|
2CSC400002D0903
2CSG210200R1211
ABB E 257 C30-230
S465502
2CSG035100R1211
2CSG210100R1211
ABB SACE sn 125
EA1733
LCD TV SCHEMA
S550284
|
PDF
|
PCD41
Abstract: No abstract text available
Text: PART NUM BER 0 C P - P C D 4 1 1 6/ /X-TR UNCONTEOLLED DOCUMENT ELECTRO-OPTICAL CHARACTERISTICS To =25'C PARAMETER SYMBOL FORWARD VOLTAGE Vf PEAK FORWARD VOLTAGE V fm REVERSE CURRENT r TERMINAL CAPACITANCE Ct YT COLLECTOR DARK CURRENT CEO T CURRENT TRANSFER RATIO
|
OCR Scan
|
DC500V
5x1O10
100ohm
10Ooh
PCD41
|
PDF
|
PPD29F800L
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PPD29F800L 8 M-BIT CMOS 3.0 V-ONLY FLASH MEMORY 1 M-WORD BY 8-BIT BYTE MODE / 512 K-WORD BY 16-BIT (WORD MODE) Description The PPD29F800L is an electrically programmable/erasable high-speed 3.0 V-only flash memory with a 8,388,608bit configuration.
|
Original
|
PPD29F800L
16-BIT
PPD29F800L
608bit
word/16
word/32
|
PDF
|
8531
Abstract: sf.c thomson IC 8531 8531 2 E88TS
Text: r Z Z ^ 7# S G S -T H O M S O N 5 IL iO T « ! T S G 8531 SWITCHED CAPACITOR MASK PROGRAMMABLE FILTER • ■ ■ ■ ■ ■ ■ CAUER TYPE 6TH ORDER STOPBAND ATTENUATION : 32dB typ PASSBAND RIPPLE : 0.15dB (typ) CLOCK TO CUT-OFF FREQ. RATIO : 400 CLOCK FREQUENCY RANGE : 4 TO 1800kHz
|
OCR Scan
|
1800kHz
DIP-16
TSG8531
TSG85XX
SO-16
DIP-20
DIP-24
DIP-28
8531
sf.c thomson
IC 8531
8531 2
E88TS
|
PDF
|
uPD29F008LGZ-B12B-LJH
Abstract: uPD29F008LGZ-B12B-LKH uPD29F008LGZ-B12T-LJH uPD29F008LGZ-B12T-LKH uPD29F008LGZ-B15B-LJH uPD29F008LGZ-B15B-LKH uPD29F008LGZ-B15T-LJH uPD29F008LGZ-B15T-LKH
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PPD29F008L 8 M-BIT CMOS 3.0 V-ONLY FLASH MEMORY 1 M-WORD BY 8-BIT BYTE MODE Description The PPD29F008L is an electrically programmable/erasable high-speed 3.0 V-only flash memory with a 8,388,608bit configuration. It possesses an automatic single Byte program function and an automatic block erase function that
|
Original
|
PPD29F008L
PPD29F008L
608bit
uPD29F008LGZ-B12B-LJH
uPD29F008LGZ-B12B-LKH
uPD29F008LGZ-B12T-LJH
uPD29F008LGZ-B12T-LKH
uPD29F008LGZ-B15B-LJH
uPD29F008LGZ-B15B-LKH
uPD29F008LGZ-B15T-LJH
uPD29F008LGZ-B15T-LKH
|
PDF
|
2sb 667
Abstract: U1031 TSG8532 TSG8532XC TSG8532XJ TSG8532XP
Text: SbE 7 ^ 2 3 ? D OOB'iaEG S 6 S G S - T H O M S O N Tifi «SÒTH S-THOMSON TSG8532 M T - á H - 0 5 SWITCHED CAPACITOR MASK PROGRAMMABLE FILTER • CHEBYCHEV TYPE ■ 6TH ORDER ■ STOPBAND ATTENUATION : 60dB typ AT 0.25 x Fc ■ PASSBAND RIPPLE : 0.45dB (typ)
|
OCR Scan
|
TSG8532
1800kHz
TSG8532
TSG85XX
-i-U54
DIP-24
0D3cib70
DIP-28
2sb 667
U1031
TSG8532XC
TSG8532XJ
TSG8532XP
|
PDF
|
x-band diode
Abstract: x-band limiter x-band limiter diode NJS6939 x-band filter
Text: NJS6939 X - j B an d D io d e L im ite r G E N ER A L DESCRIPTION N J S 6 9 3 9 is a high p ow er Limiter designed specifically fo r use in X -ban d radars. Since it has a self b ia se d limiter d io d e, n o external trigger and no bias is required. FEATURES
|
OCR Scan
|
NJS6939
W10TH
TC-25
x-band diode
x-band limiter
x-band limiter diode
x-band filter
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PART NUMBER UNCONTROLLED DOCUMENT ELEC TR O -O PTIC AL CHARACTERISTICS To = 25'C PARAMETER SYMBOL FORWARD VOLTAGE Vf PEAK FORWARD VOLTAGE V fm REVERSE CURRENT r TERMINAL CAPACITANCE Ct COLLECTOR DARK CURRENT CEO T CURRENT TRANSFER RATIO CRT COLLECTOR—EMITTER SATURATION VOLTAGE
|
OCR Scan
|
P-PCD218
|
PDF
|
65162
Abstract: transistor fn 1016
Text: electronic June 1992 HM 65162 HI-REL DATA SHEET 2kX8 VERY LOW POWER CMOS SRAM FEATU R ES ACCESS TIME : 70/85 ns . TTL COMPATIBLE INPUTS AND OUTPUTS VERY LOW POWER CONSUMPTION ACTIVE : 240 mW typ STANDBY : 2.0 uW (typ) DATA RETENTION : 0.8 (iW (typ) . ASYNCHRONOUS
|
OCR Scan
|
fl45b
65162
transistor fn 1016
|
PDF
|
Untitled
Abstract: No abstract text available
Text: • R r M A P T 10 0 4 3 J V R ADVANCED po w er Te c h n o l o g y 1000v 22A 0.430Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
OCR Scan
|
1000v
OT-227
APT10043JVR
E145592
|
PDF
|