Untitled
Abstract: No abstract text available
Text: 1/1 002-01 / 20030824 / e9911_zdsu.fm ZDSU Series EMC Components Filters for Telephone Line With Modular Connector FEATURES • Providing comfortable Internet environment by eliminating AM broadcasting waves invading telephone line. • Eliminating unnecessary signals exceeding voice frequency
|
Original
|
PDF
|
ZDSU-001
150mA
160kHz]
ZDSU-001
110max.
|
ZDSU-001
Abstract: No abstract text available
Text: 1/1 002-01 / 20010716 / e9911_zdsu.fm EMC Components ZDSU Series Filters for Telephone Line With Modular Connector FEATURES ELECTRICAL CHARACTERISTICS • Providing comfortable Internet environment by eliminating AM broadcasting waves invading telephone line.
|
Original
|
PDF
|
ZDSU-001
150mA
160kHz]
110max.
ZDSU-001
|
DS1250
Abstract: DS1250AB DS1250AB-100 DS1250AB-70 DS1250Y DS1250Y-100 DS1250Y-70 DS9034PC
Text: DS1250Y/AB 4096k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM,
|
Original
|
PDF
|
DS1250Y/AB
4096k
DS1250Y)
DS1250AB)
32-pin
DS1250
DS1250AB
DS1250AB-100
DS1250AB-70
DS1250Y
DS1250Y-100
DS1250Y-70
DS9034PC
|
DS1210N
Abstract: No abstract text available
Text: 19-6294; Rev 6/12 DS1210 Nonvolatile Controller Chip FEATURES • • PIN ASSIGNMENT Converts CMOS RAMs into Nonvolatile Memories Unconditionally Write Protects when VCC is Out-of-Tolerance Automatically Switches to Battery when
|
Original
|
PDF
|
DS1210
16-Pin
100nA
DS1210
DS1210N
|
DS1250W-100
Abstract: DS1250W-100IND DS1250WP-100 DS1250WP-100IND DS9034PC DS9034PCI DS1250 DS1250W
Text: 19-5648; Rev 12/10 DS1250W 3.3V 4096k Nonvolatile SRAM www.maxim-ic.com FEATURES • • 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM,
|
Original
|
PDF
|
DS1250W
4096k
100ns
32-pin
MDT32
DS1250W-100
DS1250W-100IND
DS1250WP-100
DS1250WP-100IND
DS9034PC
DS9034PCI
DS1250
DS1250W
|
DS9034PC
Abstract: DS1250 DS1250W DS1250W-100 DS1250W-100IND DS1250W-150 DS1250WP-100 DS1250WP-100IND
Text: DS1250W 3.3V 4096k Nonvolatile SRAM www.maxim-ic.com FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM, EEPROM or Flash memory
|
Original
|
PDF
|
DS1250W
4096k
100ns
32-pin
DS9034PC
DS1250
DS1250W
DS1250W-100
DS1250W-100IND
DS1250W-150
DS1250WP-100
DS1250WP-100IND
|
Untitled
Abstract: No abstract text available
Text: Multi Layer Ceramic Capacitor MLCC 1. Model : CL31B332KGFNNNE 2. Description Part no. Size (inch(mm) Thickness (mm) Temperature charateristics Capacitance value(uF) Capacitance tolerance(%) Voltage (V) CL31B332KGFNNNE 1206/3216 1.25mm X7R 3.3nF ± 10 %
|
Original
|
PDF
|
CL31B332KGFNNNE
E991A,
|
32-PIN
Abstract: DS1249W DS1249W-100 DS1249W-150
Text: DS1249W 3.3V 2048kb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation
|
Original
|
PDF
|
DS1249W
2048kb
100ns
32-pin
DS1249W
150ns
32-PIN,
DS1249W-100
DS1249W-150
|
K19 FET
Abstract: plc fire protection DS1265W DS2065W DS2065W-100
Text: Rev 0; 1/05 DS2065W 3.3V Single-Piece 8Mb Nonvolatile SRAM Features The DS2065W is a 8Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in
|
Original
|
PDF
|
DS2065W
256-ball
K19 FET
plc fire protection
DS1265W
DS2065W-100
|
8E89
Abstract: No abstract text available
Text: お使いになる前に 取扱説明書 基本操作 電話をかける／受ける 文字入力 電話帳 メール 音・表示・照明の設定 カレンダー セキュリティ 便利な機能 ウィルコムの各種サービス データフォルダ
|
Original
|
PDF
|
|
DS1270W
Abstract: DS2070W-100 DS2070W
Text: Rev 0; 8/06 3.3V Single-Piece 16Mb Nonvolatile SRAM Features The DS2070W is a 16Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in
|
Original
|
PDF
|
DS2070W
256-ball
DS2070W
DS1270W
DS2070W-100
|
32-PIN
Abstract: DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70
Text: DS1249Y/AB 2048k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns
|
Original
|
PDF
|
DS1249Y/AB
2048k
DS1249Y)
DS1249AB)
32-pin
32-pin,
600-mil
DS1249Y/AB
740-MIL
DS1249AB
DS1249AB-100
DS1249AB-70
DS1249Y
DS1249Y-100
DS1249Y-70
|
Untitled
Abstract: No abstract text available
Text: DS1345Y/AB 1024k Nonvolatile SRAM with Battery Monitor www.maxim-ic.com FEATURES § § § § § § § § § § § § 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Power supply monitor resets processor when
|
Original
|
PDF
|
DS1345Y/AB
1024k
DS1345Y)
DS1345AB)
DS1345YP-100
100ns
56-G0003-001A1
DS1345YP-70IND+
DS1345YP-70IND
|
DS1225Y
Abstract: No abstract text available
Text: DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM
|
Original
|
PDF
|
DS1225Y
28-pin
24-Pin
720-mil
A0-A12
150ns
170ns
|
|
|
ds1210s
Abstract: No abstract text available
Text: DS1210 Nonvolatile Controller Chip www.maxim-ic.com FEATURES § § § § § § § § § § § Converts CMOS RAMs into Nonvolatile Memories Unconditionally Write Protects when VCC is Out-of-Tolerance Automatically Switches to Battery when Power-Fail Occurs
|
Original
|
PDF
|
DS1210
100nA
16-Pin
DS1210
300-mil)
DS1210SN+
56-G4009-001B
W16-11*
ds1210s
|
Untitled
Abstract: No abstract text available
Text: DS1312 Nonvolatile Controller with Lithium Battery Monitor www.dalsemi.com FEATURES § § § § § § § § § Converts CMOS SRAM into nonvolatile memory Unconditionally write-protects SRAM when VCC is out of tolerance Automatically switches to battery backup
|
Original
|
PDF
|
DS1312
16-pin
20-pin
DS1312S-2/T
DS1312S-2
DS1312S-2+
DS1312E/T
DS1312E+
DS1312E
DS1312E
|
DS1245V
Abstract: 32-PIN 34-PIN DS1245 DS1245AB DS1245Y DS1243AB-100
Text: D S 1245Y /A B DALLAS s e m ic o n d u c t o r DS1245Y/AB 1024K Nonvolatile SRAM FEATURES PIN ASSIGNM ENT * 1 0 years minimum data retention in the absence of external power 1 1 NC A16 • Data is automatically protected during power loss Í A14 • Dl P-package devices directly replace 128K x 8 vola
|
OCR Scan
|
PDF
|
DS1245Y/AB
1024K
DS1245Y)
DS1245AB)
32-pin
2blH13D
DS1245YL/ABL
34-PIN
DS1245V
DS1245
DS1245AB
DS1245Y
DS1243AB-100
|
DS1225Y
Abstract: No abstract text available
Text: DALLAS DS1225Y 64K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM
|
OCR Scan
|
PDF
|
DS1225Y
28-pin
DS1225Y
28-PIN
|
Untitled
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR D S 1385/D S1387 RAM ified Real Tim e C lock 4K x 8 FEATURES PIN ASSIGNMENT • Upgraded IBM AT com puter dock/calen d a r with 4K x 8 extended RAM o e r x i • Totally nonvolatile with over 10 years of operation in the absence of power
|
OCR Scan
|
PDF
|
1385/D
S1387
|
Untitled
Abstract: No abstract text available
Text: DS1385/DS1387 DALLAS DS1385/DS1387 RAMified Real Time Clock 4K x 8 SEMICONDUCTOR PIN ASSIGNMENT FEATURES • Upgraded IBM AT computer elock/calendar with 4K x 8 extended RAM • Totally nonvolatile with over 10 years of operation in the absence of power o er
|
OCR Scan
|
PDF
|
DS1385/DS1387
24-hour
12-hour
DS1387
24-PIN
24-PIN
010TN
|
DS1630AB-120
Abstract: No abstract text available
Text: DS1630Y/AB DALLAS DS1630Y/AB SEMICONDUCTOR Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power Vcc WE • Data is automatically protected during power loss A13 • Directly replaces 32K x 8 volatile static RAM or
|
OCR Scan
|
PDF
|
DS1630Y/AB
DS1630Y)
DS1630Y/AB
34-PIN
68-pin
2bl4130
DS1630AB-120
|
Untitled
Abstract: No abstract text available
Text: DS1650Y/AB DALLAS SEMICONDUCTOR DS1650Y/AB Partitionable 4096K NV SRAM PIN ASSIGNMENT FEATURES •10 years minimum data retention in the absence of external power A 18 I| 1 32 1 A 16 I1 2 31 % A 14 11 3 3 0 1 A 17 A 12 I1 4 291 W E A 7 I1 5 2 8 1 A 13 A 6
|
OCR Scan
|
PDF
|
DS1650Y/AB
4096K
2bl4130
DS1650Y/AB
34-PIN
68-pin
34P-SMT-3
HIS-40001-04
|
Untitled
Abstract: No abstract text available
Text: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 A6 A5 A4 A3 A2 • Data is autom atically protected during power loss • Replaces 32K x 8 volatile static RAM, EEPROM or
|
OCR Scan
|
PDF
|
DS1230Y/AB
|
B 0920
Abstract: No abstract text available
Text: D S 1245Y/A B DALLAS DS1245Y/AB 1024K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power 11 1 II 2 A U II 3 A12 II 4 A7 II 5 32 1I V CC 31 1I A15 30 1I NC 29 1I WE 28 Ij A13 NC A16 • Data is automatically protected during power loss
|
OCR Scan
|
PDF
|
1245Y/A
DS1245Y/AB
1024K
B 0920
|
