221D
Abstract: MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
Text: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art
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MJE18004
MJF18004
MJE/MJF18004
r14525
MJE18004/D
221D
MJE18004
MJE210
MJF18004
MPF930
MTP8P10
MUR105
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MJF31C
Abstract: 221D MJF32C
Text: MJF31C* NPN , MJF32C* (PNP) *Preferred Devices Complementary Silicon Plastic Power Transistors for Isolated Package Applications Designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage – VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
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MJF31C*
MJF32C*
E69369,
r14525
MJF31C/D
MJF31C
221D
MJF32C
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221D
Abstract: MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105
Text: MOTOROLA Order this document by MJE18006/D SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 * Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 6.0 AMPERES
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MJE18006/D*
MJE18006/D
221D
MJE18006
MJE210
MJF18006
MPF930
MTP8P10
MUR105
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221D
Abstract: AN1040 MJF47 MJF47G TIP47
Text: MJF47 High Voltage Power Transistor Isolated Package Applications Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required to be electrically isolated from the
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MJF47
TIP47
E69369,
MJF47/D
221D
AN1040
MJF47
MJF47G
TIP47
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Untitled
Abstract: No abstract text available
Text: MURF820 Advance Information SWITCHMODE Power Rectifier Designed for use in switching power supplies, inverters and as free wheeling diodes, these state−of−the−art devices have the following features: • Ultrafast 35 ns Recovery Times • 150°C Operating Junction Temperature
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MURF820
E69369
MURF820/D
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MBRF1545CT
Abstract: No abstract text available
Text: MBRF1545CT SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
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MBRF1545CT
MBRF1545CT/D
MBRF1545CT
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Untitled
Abstract: No abstract text available
Text: MAC212A6FP, MAC212A8FP, MAC212A10FP Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are
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MAC212A6FP,
MAC212A8FP,
MAC212A10FP
MAC212A6FP/D
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Untitled
Abstract: No abstract text available
Text: MCR218−6FP, MCR218−10FP Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. • Glass Passivated Junctions with Center Gate Fire for Greater
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MCR218â
E69369
MCR218FP/D
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AN569
Abstract: MTE215N10E mosfet transistor 400 volts.100 amperes
Text: MOTOROLA Order this document by MTE215N10E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet ISOTOP TMOS E-FET. Power Field Effect Transistor Designer's MTE215N10E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 215 AMPERES
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MTE215N10E/D
MTE215N10E
MTE215N10E/D*
AN569
MTE215N10E
mosfet transistor 400 volts.100 amperes
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transistor mj 1503 motorola
Abstract: AN569 MTE30N50E tp 312 transistor
Text: MOTOROLA Order this document by MTE30N50E/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTE30N50E ISOTOP TMOS E-FET. Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 30 AMPERES 500 VOLTS
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MTE30N50E/D
MTE30N50E
MTE30N50E/D*
transistor mj 1503 motorola
AN569
MTE30N50E
tp 312 transistor
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bta12
Abstract: BTA12 Application note bta12 application BTA12 snubber bta12 phase control application triac bta12 triggering BTA12 purpose BTA12 600 DATASHEET BTA12-600C4G bta12 600 triac circuit diagram for application
Text: BTA12-600C4G, BTA12-800C4G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features • • • • • • • •
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BTA12-600C4G,
BTA12-800C4G
O-220AB
E69369
BTA12-600C4/D
bta12
BTA12 Application note
bta12 application
BTA12 snubber
bta12 phase control application
triac bta12 triggering
BTA12 purpose
BTA12 600 DATASHEET
BTA12-600C4G
bta12 600 triac circuit diagram for application
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221D
Abstract: AN1040 MJE2955T MJE3055T MJF2955 MJF3055
Text: MJF3055 NPN , MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed for general purpose amplifier and switching applications. • • • • • • • • • http://onsemi.com Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T
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MJF3055
MJF2955
MJE3055T
MJE2955T
E69369,
u8000
MJF3055/D
221D
AN1040
MJE2955T
MJF2955
MJF3055
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tip122 tip127 audio amp schematic
Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001 SCILLC, 2001 Previous Edition 1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.
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DL111/D
July-2001
r14525
tip122 tip127 audio amp schematic
mje521 equivalent
BJT small signal low power BD139
MJ15003 300 watts amplifier
2N3773 pinout
transistor mj11032 equivalent
MJ11028 transistor equivalent
2n3055 IC
2N3773 audio amplifier diagram
2n222 TRANSISTOR use as audio amplifier
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TRIAC zo 607 MA
Abstract: ZO 607 TRIAC Westinghouse SCR handbook tl-130 transformer BRX49 equivalent 800w class d circuit diagram schematics triac MAC 97 AB triac MAC 97 A6 ZO 103 TRIAC 1N5760
Text: DL137/D Rev. 7, May-2000 Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers ON Semiconductor Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers DL137/D Rev. 7, May–2000 SCILLC, 2000 Previous Edition 1995 “All Rights Reserved’’
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DL137/D
May-2000
r14525
TRIAC zo 607 MA
ZO 607 TRIAC
Westinghouse SCR handbook
tl-130 transformer
BRX49 equivalent
800w class d circuit diagram schematics
triac MAC 97 AB
triac MAC 97 A6
ZO 103 TRIAC
1N5760
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221D
Abstract: MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105
Text: MOTOROLA Order this document by MJE18008/D SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 * Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES
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MJE18008/D*
MJE18008/D
221D
MJE18008
MJE210
MJF18008
MPF930
MTP8P10
MUR105
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b20100
Abstract: B20100 diode MBRF20100CT
Text: MBRF20100CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
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MBRF20100CT
AN1040.
b20100
B20100 diode
MBRF20100CT
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mjf18004
Abstract: No abstract text available
Text: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state−of−the−art
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MJE/MJF18004
MJE18004
MJF18004
AN1040.
mjf18004
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mbr2506
Abstract: MBR25060V
Text: MOTOROLA Order this document by MBR25060V/D SEMICONDUCTOR TECHNICAL DATA Advance Information MBR25060V SWITCHMODE S ch o ttky Pow er R e c tifie r . . . using the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features:
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MBR25060V/D
E69369
mbr2506
MBR25060V
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JF18006
Abstract: No abstract text available
Text: O rder this data sheet by M JE18006/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 18006 M JF18006 Designer’s Data Sheet SWITCHMODE™ Motorola Preferred Devices NPN Bipolar Pow er Hransistor For S w itching Pow er Supply A pplications The M JE/M JF18006 have an applications specific state-of-the-art die designed for use
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JE18006/D
JF18006
O-220
O-220
MJF18006,
221D0AB
221D-01
221D-02.
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by BUL45/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L 45* BUL45F* NPN Silicon Power Transistor ‘ Motorola Preferred Device High Voltage SWITCHMODE™ Series POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS
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BUL45/D
BUL45F*
BUL45F
221D-02
O-220
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRF2545CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S chottky Pow er R ectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-sllicon power diode. S tate-of-the-art geometry features
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MBRF2545CT/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MF122/D SEMICONDUCTOR TECHNICAL DATA NPN M JF122 Com plem entary Power Darlingtons PNP M JF127 For Isolated Package Applications Designed for general-purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
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MF122/D
JF122
JF127
TIP122
TIP127
E69369,
221D-02
O-220
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B745 MOTOROLA
Abstract: b745 diode b745 motorola an1040 RECTIFIER DIODES Motorola
Text: MOTOROLA Order this document by MBRF745/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S ch o ttky Pow er R e c tifie r MBRF745 The SW ITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. S tate-of-th e-art geometry features
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MBRF745/D
B745 MOTOROLA
b745 diode
b745
motorola an1040
RECTIFIER DIODES Motorola
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BRF20200CT
Abstract: Schottky com anode TO220
Text: MOTOROLA Order this document by MBRF20200CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier M BRF20200CT The SW ITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area m eta l-to -silico n power diode. S ta te -o f-th e -a rt geometry features
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MBRF20200CT/D
BRF20200CT
Schottky com anode TO220
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