E2 SMD TRANSISTOR Search Results

marking TRANSISTOR SMD nf c1

Contextual Info: Transistors SMD Type NPN/PNP Complementary Silicon Transistor Array BC847PN • Features SOT-363 ● Two internal isolated NPN/PNP Transistors in one package Unit: mm +0.1 -0.1 1.3 4 2 3 E2 +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.05 0.95-0.05 B2 0.1max

Contextual Info: Transistors IC SMD Type Product specification BC847PN • Features SOT-363 ● Two internal isolated NPN/PNP Transistors in one package Unit: mm +0.1 -0.1 1.3 4 2 3 E2 +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.05 0.95-0.05 B2 0.1max 1 C1 0.36 +0.15 2.3-0.15

BUD620

Abstract: E2 p SMD Transistor ic 9114 FE2A INTERNATIONAL RECTIFIER 9125 smd transistor 015 G 2a1100
Contextual Info: BUD620 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature Optimized RBSOA High reverse voltage

E2 SMD Transistor

Abstract: SMD A8 Transistor smd transistor 8c smd transistor A8 SMD a7 Transistor hm1-65642-883
Contextual Info: m W H A R R HM-65642 I S S E M I C O N D U C T O R 8K x 8 Asynchronous CMOS Static RAM January 1992 Description Features Full CMOS Design Six Transistor Memory Cell Low Standby Supply C u rre n t. . 100|oA Low Operating Supply C urrent.

Contextual Info: Transistors SMD Type NPN general purpose double transistor BCV61 • Features ● High current gain Unit: mm ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage

Contextual Info: MOSFET SMD Type PNP general purpose double transistor BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage

Contextual Info: Transistors Diodes SMD Type Product specification BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO

Contextual Info: Transistors SMD Type Product specification BCV61 • Features ● High current gain Unit: mm ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 30

CDFP4-F16

Abstract: ISL73096RHVF "top mark" intersil 5962F0721801V9A ISL73096RH ISL73127RH ISL73128RH NPN PNP Transistor Arrays PNP Transistor Arrays Intersil s1 smd transistor
Contextual Info: ISL73096RH, ISL73127RH, ISL73128RH Data Sheet March 23, 2009 Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays FN6475.2 Features • Electrically Screened to SMD # 5962-07218 The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The

AN1294

Abstract: PD60015 PD60015S
Contextual Info: PD60015 PD60015S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 10 dB gain @ 2000 MHz DESCRIPTION The PD60015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power

pd55035

Abstract: smd transistor code A4
Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 13 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

smd transistor code A4

Abstract: AN1294 PD60004 PD60004S
Contextual Info: PD60004 PD60004S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 4 W with 11 dB gain @ 2000 MHz DESCRIPTION The PD60004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power

AN1294

Abstract: PD60030 PD60030S
Contextual Info: PD60030 PD60030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 10 dB gain @ 2000 MHz DESCRIPTION The PD60030 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power

Transistors Diodes smd e2

Abstract: smd marking 1d BC846S KC846S 5B-23
Contextual Info: Transistors SMD Type NPN Silicon AF Transistors Array KC846S BC846S SOT-363 1.3 Unit: mm +0.1 -0.1 +0.15 2.3-0.15 Features +0.1 1.25-0.1 0.525 0.65 0.36 For AF input stage and driver applications +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.05 0.95-0.05 Low collector-emitter saturation voltage.

AN1294

Abstract: LET20015 LET90015
Contextual Info: LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION

transistor kA2 smd

Abstract: AEP01481
Contextual Info: SIEMENS 5-V Low-Drop Voltage Regulator TLE 4267 Version 2.0 Bipolar IC Features • • • • • • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V < 400 ms

Contextual Info: PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

4267 G

Abstract: E2 SMD Transistor
Contextual Info: 5-V Low-Drop Voltage Regulator TLE 4267 Version 2.0 Bipolar IC Features ● ● ● ● ● ● ● ● ● ● ● ● ● ● Output voltage tolerance ≤ ± 2 % Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V ≤ 400 ms

BUD620

Abstract: E2 p SMD Transistor
Contextual Info: Temic BUD620 S e m i c o n d u c t o r s Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT Very low dynamic saturation HIGH SPEED technology Very low operating temperature Planar passivation Optimized RBSOA 100 kHz switching rate

P1M marking code sot 223

Abstract: marking codes transistors sot-223 sot-89 marking code 5A SMD CODE SOT89 lc MARKING 5A SOT-89 sot-23 marking LC smd marking rc SOT23 SOT89 MARKING CODE 5A SMD transistors marking code 2.F AS3 SOT223
Contextual Info: 11 SMD Darlington Transistors SMD® Darlington Transistors Description Mechanical Data Philips Components Darlington transistors provide high input impedance and thus high gain by virtue of two seriesintegrated transistors on a single chip. High current versions

Contextual Info: Programmable Single-/Dual-/Triple- Tone Gong SAE 800 Pb-free lead plating; RoHS compliant Bipolar IC Features ● ● ● ● ● ● ● ● ● Supply voltage range 2.8 V to 18 V Few external components no electrolytic capacitor 1 tone, 2 tones, 3 tones programmable

ic 4800 8 pin

Abstract: PV smd transistor Transistors Diodes smd e2 E2 p SMD Transistor gong SMD code E2 GPD05583 GPS05121 Q67000-A8339 Q67000-A8340
Contextual Info: Programmable Single-/Dual-/Triple- Tone Gong SAE 800 Preliminary Data Bipolar IC Features ● ● ● ● ● ● ● ● ● Supply voltage range 2.8 V to 18 V Few external components no electrolytic capacitor 1 tone, 2 tones, 3 tones programmable Loudness control

PV smd transistor

Abstract: e2 smd transistor SAE 800 Q67000-A8340 SAE 600 GPD05583 GPS05121 Q67000-A8339 smd e2 SAE800
Contextual Info: Programmable Single-/Dual-/Triple- Tone Gong SAE 800 Preliminary Data Bipolar IC Features ● ● ● ● ● ● ● ● ● Supply voltage range 2.8 V to 18 V Few external components no electrolytic capacitor 1 tone, 2 tones, 3 tones programmable Loudness control

PV smd transistor

Abstract: smd transistor A13 SAE 600 e2 smd transistor Q67000-A8340 SAE800 Q67000-A8339 chime generator e2 ic SAE 800
Contextual Info: Programmable Single-/Dual-/Triple- Tone Gong SAE 800 Pb-free lead plating; RoHS compliant Bipolar IC Features ● ● ● ● ● ● ● ● ● Supply voltage range 2.8 V to 18 V Few external components no electrolytic capacitor 1 tone, 2 tones, 3 tones programmable