E0410 Search Results
E0410 Price and Stock
TE Connectivity RE04-106PCONN RCPT HSG |
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RE04-106P | Bulk | 25 | 1 |
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RE04-106P | Bulk | 17 Weeks, 5 Days | 26 |
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RE04-106P | Each | 314 | 1 |
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RE04-106P | 90 |
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Labfacility Limited XE-0410-001IEC PFA 1/0.315MM PLUG T 2M |
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XE-0410-001 | Bag | 7 | 1 |
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Metcal Q-ME0410IMPELLER ASSY, BVX-200 |
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Q-ME0410 |
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TE Connectivity RE04-106SPLUG ASSY |
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RE04-106S |
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RE04-106S | Each | 1 | 1 |
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RE04-106S | 4 |
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L-com Inc TSPE04-10MSPE BULK, SF/TP 16STR, PUR, GRN, |
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TSPE04-10M | Bulk | 3 Weeks | 1 |
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E0410 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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saa 1900Contextual Info: EUROPEAN POWER SUPPLIES © ® CB—CERTIFICATE INPUT: 220-230 VAC/50 Hz DC OUTPUT AC OUTPUT MODEL NO. OUTPUT VOLTAGE VDC CURRENT OUTPUT mA UNIT SIZE MODEL NO. E0330BO E0360BO * E0410BT E0430BO E0460BO * E0610BT E0630BL E0650BL E0660BO E061ABT E0612ABO |
OCR Scan |
VAC/50 E0330BO E0360BO E0410BT E0430BO E0460BO E0610BT E0630BL E0650BL E0660BO saa 1900 | |
transistor marking code 12W SOT-23Contextual Info: Supertex inc. LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS |
Original |
LND150 LND150 DSFP-LND150 C041114 transistor marking code 12W SOT-23 | |
Contextual Info: Supertex inc. VN4012 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds |
Original |
VN4012 DSFP-VN4012 B082013 | |
Contextual Info: Supertex inc. VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds |
Original |
VP0104 DSFP-VP0104 C082313 | |
B0728
Abstract: 125OC TN2640 TN2640ND sitn 620
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Original |
TN2640 DSFP-TN2640 B072809 B0728 125OC TN2640 TN2640ND sitn 620 | |
TP0620
Abstract: TP2520ND VF25 6 PIN case mos fet p-channel sitp0
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TP0620 DSFP-TP0620 B031411 TP0620 TP2520ND VF25 6 PIN case mos fet p-channel sitp0 | |
VN10K
Abstract: VN0106N3 VN10KN3-G sivn
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VN10K DSFP-VN10K B031411 VN10K VN0106N3 VN10KN3-G sivn | |
SiTN
Abstract: TN0106 TN0106N3-G TN1506NW VF15
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TN0106 DSFP-TN0106 B030411 SiTN TN0106 TN0106N3-G TN1506NW VF15 | |
sitn
Abstract: TN0702N3-G
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TN0702 130pF DSFP-TN0702 B031411 sitn TN0702N3-G | |
b0613Contextual Info: Supertex inc. VP0106 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds |
Original |
VP0106 VP0106 DSFP-VP0106 B061311 b0613 | |
Contextual Info: Supertex inc. VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability |
Original |
VP0104 VP0104 DSFP-VP0104 B062211 | |
TN1LContextual Info: Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage |
Original |
TN0104 DSFP-TN0104 C071411 TN1L | |
b0705Contextual Info: Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TN0604 General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance |
Original |
TN0604 DSFP-TN0604 B070511 b0705 | |
siemens fet to92
Abstract: dn5mw 125OC DN3545 DN3545N3-G DN3545N8-G
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DN3545 DSFP-DN3545 B052009 siemens fet to92 dn5mw 125OC DN3545 DN3545N3-G DN3545N8-G | |
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Contextual Info: Supertex inc. TP2535 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description Low threshold -2.4V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage |
Original |
TP2535 125pF DSFP-TP2535 A052109 | |
Contextual Info: Supertex inc. TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.0V max. On-resistance guaranteed at VGS = 2, 3, and 5V High input impedance Low input capacitance (130pF typical) Fast switching speeds Low on-resistance |
Original |
TN0702 130pF DSFP-TN0702 B031411 | |
Contextual Info: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities |
Original |
VN1206 DSFP-VN1206 A041309 | |
CL520
Abstract: marking n3 CL520N3-G
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Original |
CL520 CL520 O-252 DSFP-CL520 A072909 marking n3 CL520N3-G | |
Contextual Info: DATA SHEET 128M bits SDRAM EDS1216AABH, EDS1216CABH 8M words x 16 bits Pin Configurations • Density: 128M bits • Organization 2M words × 16 bits × 4 banks • Package: 54-ball FBGA Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 3.3V ± 0.3V |
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EDS1216AABH, EDS1216CABH 54-ball 133MHz cycles/64ms M01E0107 E0410E50 | |
P2640
Abstract: 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel
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Original |
TP2640 DSFP-TP2640 A062609 P2640 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel | |
sivn
Abstract: VN4E seimens MARKING CODE BV sot-89 125OC VN2450
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Original |
VN2450 DSFP-VN2450 A052209 sivn VN4E seimens MARKING CODE BV sot-89 125OC VN2450 | |
sivn
Abstract: sivn fet marking n3 VN0109N3-G VN0109
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Original |
VN0109 DSFP-VN0109 A041409 sivn sivn fet marking n3 VN0109N3-G VN0109 | |
4012L
Abstract: 125OC VN4012 VN4012L-G
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Original |
VN4012 DSFP-VN4012 A041309 4012L 125OC VN4012 VN4012L-G | |
2406L
Abstract: VN2406
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Original |
VN2406 DSFP-VN2406 A041309 2406L VN2406 |