transistor marking code 12W SOT-23
Abstract: No abstract text available
Text: Supertex inc. LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS
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LND150
LND150
DSFP-LND150
C041114
transistor marking code 12W SOT-23
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN4012 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds
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VN4012
DSFP-VN4012
B082013
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds
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VP0104
DSFP-VP0104
C082313
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B0728
Abstract: 125OC TN2640 TN2640ND sitn 620
Text: TN2640 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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TN2640
DSFP-TN2640
B072809
B0728
125OC
TN2640
TN2640ND
sitn 620
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TP0620
Abstract: TP2520ND VF25 6 PIN case mos fet p-channel sitp0
Text: Supertex inc. TP0620 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input
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TP0620
DSFP-TP0620
B031411
TP0620
TP2520ND
VF25
6 PIN case mos fet p-channel
sitp0
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VN10K
Abstract: VN0106N3 VN10KN3-G sivn
Text: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input
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VN10K
DSFP-VN10K
B031411
VN10K
VN0106N3
VN10KN3-G
sivn
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SiTN
Abstract: TN0106 TN0106N3-G TN1506NW VF15
Text: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► ►► ►► ►► ►► ►► ►► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,
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TN0106
DSFP-TN0106
B030411
SiTN
TN0106
TN0106N3-G
TN1506NW
VF15
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sitn
Abstract: TN0702N3-G
Text: Supertex inc. TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 1.0V max. On-resistance guaranteed at VGS = 2, 3, and 5V High input impedance Low input capacitance (130pF typical)
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TN0702
130pF
DSFP-TN0702
B031411
sitn
TN0702N3-G
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b0613
Abstract: No abstract text available
Text: Supertex inc. VP0106 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds
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VP0106
VP0106
DSFP-VP0106
B061311
b0613
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability
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VP0104
VP0104
DSFP-VP0104
B062211
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TN1L
Abstract: No abstract text available
Text: Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage
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TN0104
DSFP-TN0104
C071411
TN1L
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b0705
Abstract: No abstract text available
Text: Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TN0604 General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance
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TN0604
DSFP-TN0604
B070511
b0705
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siemens fet to92
Abstract: dn5mw 125OC DN3545 DN3545N3-G DN3545N8-G
Text: Supertex inc. DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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DN3545
DSFP-DN3545
B052009
siemens fet to92
dn5mw
125OC
DN3545
DN3545N3-G
DN3545N8-G
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CL520
Abstract: CL520N3-G
Text: CL520 Linear, Fixed Constant Current LED Driver Features General Description ► ► ► ► ► The CL520 is a fixed, linear current regulator designed for driving LEDs at 20mA. With a maximum rating of 90V, it is able to withstand transients without the need for additional transient
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CL520
CL520
O-252
DSFP-CL520
A112009
CL520N3-G
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Untitled
Abstract: No abstract text available
Text: Supertex inc. TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.0V max. On-resistance guaranteed at VGS = 2, 3, and 5V High input impedance Low input capacitance (130pF typical) Fast switching speeds Low on-resistance
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TN0702
130pF
DSFP-TN0702
B031411
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Untitled
Abstract: No abstract text available
Text: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities
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VN1206
DSFP-VN1206
A041309
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CL520
Abstract: marking n3 CL520N3-G
Text: CL520 Linear, Fixed Constant Current LED Driver Features General Description ► ► ► ► ► The CL520 is a fixed, linear current regulator designed for driving LEDs at 20mA. With a maximum rating of 90V, it is able to withstand transients without the need for additional
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CL520
CL520
O-252
DSFP-CL520
A072909
marking n3
CL520N3-G
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 128M bits SDRAM EDS1216AABH, EDS1216CABH 8M words x 16 bits Pin Configurations • Density: 128M bits • Organization 2M words × 16 bits × 4 banks • Package: 54-ball FBGA Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 3.3V ± 0.3V
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EDS1216AABH,
EDS1216CABH
54-ball
133MHz
cycles/64ms
M01E0107
E0410E50
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P2640
Abstract: 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel
Text: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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TP2640
DSFP-TP2640
A062609
P2640
125OC
TP2640
TP2640ND
TP2640LG-G
to92 fet p channel
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sivn
Abstract: VN4E seimens MARKING CODE BV sot-89 125OC VN2450
Text: VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with
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VN2450
DSFP-VN2450
A052209
sivn
VN4E
seimens
MARKING CODE BV sot-89
125OC
VN2450
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sivn
Abstract: sivn fet marking n3 VN0109N3-G VN0109
Text: VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN0109
DSFP-VN0109
A041409
sivn
sivn fet
marking n3
VN0109N3-G
VN0109
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4012L
Abstract: 125OC VN4012 VN4012L-G
Text: VN4012 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN4012
DSFP-VN4012
A041309
4012L
125OC
VN4012
VN4012L-G
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2406L
Abstract: VN2406
Text: VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN2406
DSFP-VN2406
A041309
2406L
VN2406
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saa 1900
Abstract: No abstract text available
Text: EUROPEAN POWER SUPPLIES © ® CB—CERTIFICATE INPUT: 220-230 VAC/50 Hz DC OUTPUT AC OUTPUT MODEL NO. OUTPUT VOLTAGE VDC CURRENT OUTPUT mA UNIT SIZE MODEL NO. E0330BO E0360BO * E0410BT E0430BO E0460BO * E0610BT E0630BL E0650BL E0660BO E061ABT E0612ABO
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VAC/50
E0330BO
E0360BO
E0410BT
E0430BO
E0460BO
E0610BT
E0630BL
E0650BL
E0660BO
saa 1900
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