Untitled
Abstract: No abstract text available
Text: R E V ISID N c M 0D S -F-8P 8C -X -S-X -X-TH T A B LE Code F o rw a rd -G G re e n -Y Y e llo w 1 R e ve rse — LED USED L E D — G1 - X X — L E D — Y1 - X X -1 G ree n O ra n g e LED — G 2 — XX - 2 Y e llo w O ra n g e LE D — Y 2 — XX — 3
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Untitled
Abstract: No abstract text available
Text: Solid State Auto Switches/Direct Mount Type D-F8N, D-F8P, D-F8B Auto Switch Specifications Grommet D-F8 with indicator light A u t o s w itc h p a r t n o . D-F8N Electrical entry direction P e r p e n d ic u la r D-F8P W ir in g ty p e lo a d PNP — IC c ir c u it, 2 4 V D C re la y , P L C
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Untitled
Abstract: No abstract text available
Text: PA RT o NUM BER DEFINITIO N ÏÏM 7 7 3 1 3 -Y X X —XX X NB Q F P O S IT IO N S O PTIO N S E E SHEET 3 e — V E R S IO N PLATIN G BASIC PART NUMBER j! - I! ill e 63- 01 MIN o RECOM M ENDED 0.62 H O LE PATTERN SQUARE NOTES: A A 1 - 2 - PIN 3 - M ATERIAL B O D Y : P O LA M ID 3 0 %
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F3D710
F5017Z
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marking code p07 sot89
Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Text: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING
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2PA1576Q
2PA1576R
2PA1576S
2PA17
2PA1774R
2PA1774S
2PB709AQ
2PB709AR
2PB709AS
2PB710AQ
marking code p07 sot89
marking code 3Fp
P1M marking code sot 223
PDTC* MARKING CODE
p04 sot223
FtZ MARKING CODE
T07 marking
P2F SOT23
marking t04 sot23
marking code P1F
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2SM33
Abstract: No abstract text available
Text: DATASHEET PM PM C-1990263 ISSUE 4 PMC-Sierra, Inc. PM7381 FREEDM-32A672 32 LINK, 672 CHANNEL F R A M E EN G IN E A N D DATA LINK M A NA G ER W ITH ANY-PHY PACKET IN TE R FA C E PM7381 FREEDM -32A672 32 LINK, 672 CHANNEL FRAME ENGINE AND DATALINK MANAGER WITH
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C-1990263
PM7381
FREEDM-32A672
PM7381
FREEDMTM-32A672
PMCSS00236
PMC-1990263
PMC-1980532
2SM33
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la 8040
Abstract: ic 8040
Text: HOLE HI-8040 INTEGRATED CIRCUITS S e p te m b e r 1999 CMOS HIGH VOLTAGE DISPLAY DRIVER GENERAL DESCRIPTION APPLICATIONS The HI-8040 is a CM OS integrated circuit designed for high voltage LCD display drive applications. It can drive 85 segm ents at voltages between +5 and -30 volts. An optional
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HI-8040
HI-8040
HI-8040Q
HI-8040QT
HI-8040QM-01
100-PIN
la 8040
ic 8040
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Untitled
Abstract: No abstract text available
Text: RFD8P06LESM, RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET ju iy 1 9 9 7 Features Description • 8A, 60V T hese pro du cts are P -C hannel po w e r M O S FE T s m an ufacture d using the M eg aF E T process. T his process, w h ich uses feature sizes appro aching tho se o f LSI circuits,
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RFD8P06LESM,
RFP8P06LE
0-300i2
1-800-4-HARRIS
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equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:
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1-800-4HARRIS
equivalent data book of 10N60 mosfet
MC14016CP
GD4511
an-6466
CX 2859 SMD
74AC14 spice
6120* harris
HCF4018be
7028 SMD Transistor
spice irfbc40
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RFD8P06LE
Abstract: RFD8P06LESM RFD8P06LESM9A RFP8P06LE 30e2
Text: S E M I C O N D U C T O R RFD8P06LE, RFD8P06LESM, RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET July 1997 Features Description • 8A, 60V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process,
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RFD8P06LE,
RFD8P06LESM,
RFP8P06LE
1-800-4-HARRIS
RFD8P06LE
RFD8P06LESM
RFD8P06LESM9A
RFP8P06LE
30e2
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30KF60B
Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
Text: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166
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1N4001
1N4002
1N4004
1N4005
1N4006
1N4007
2VF10CT
F20CT
F30CT
F40CT
30KF60B
10EF1
NSF03A20
C25P10Q
F10P10Q
C25P40F
KSF25A120B
C10P10Q
61MQ60
c16p40f
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Untitled
Abstract: No abstract text available
Text: 3 6 THIS DR A WI N G COPYRI GHT IS UNPUBL IS HED. 19 RELEASED BY AMP INCORPORATED. ALL F OR P U B L I C A T I O N RIGHTS D LOC DIST REVISIONS RESERVED. LTR DESCRIPTION RELEASE -1 REV 0520-0237-05 PER THRU -12 DA T E DWN A PV D 2 1 JAN04 T5 JH 18FEB05 T5
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18FEB05
JAN04
JUN97
/home/usQl5872/edmmod
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MIL-F-18327
Abstract: 8618S
Text: FILTERS BANDPASS 24 P in H T hrough H o le M o l/m S u p p r e s s io n ig h Fc MHz NOTE: - 1 dB RIPPLE BW (MHz) LOSS (dB) 20 dB BW (MHz) 40 dB BW (MHz) (50dB on low end) PACKAGE 10.7 21.4 30.0 45.0 3.5 3.5 3.5 3.5 0.5 1.0 1.5 2.2 9.63-11.8 19.26-23.6 27-33
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FBP-11
FBP-21
FBP-30
FBP-45
FBP-50
FBP-60
FBP-70
F8P-140
FBP-200
MIL-F-18327.
MIL-F-18327
8618S
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Untitled
Abstract: No abstract text available
Text: *¡K A U ~b ~ «e ~ is 2 -R TÍ 33 njp ü ° nl r ^ ® nj < £ ffi m e « M I j? * SS10 S * ÏÏS® Ä * ®i s m ?sj í y. íV-~v M ^ 5 «C Dffl W » 4< oí m ta m -K m isa -k $ su -K $3 ® Ì&3 3 « * . Jr6 ili * -s ’-<- b k it 6 $ * W ^ ~ •€ •
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100nA(
470MHz
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DIODE C8P
Abstract: F8P06Q C8P05Q C8P06Q F8P05Q
Text: SCHOTTKY BARRIER DIODE C8P05Q C8P06Q F8P05Q F8P06Q 8.9A /50— 60V FEATURES o Similar to T0-220AB Case • Fully Molded Isolation F - Type • Dual Diodes - Cathode Common • Low Forward Voltage Drop o Low Power L o s s , High Efficiency • High Surge Capability
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C8P05Q
C8P06Q
F8P05Q
F8P06Q
T0-220AB
4K16DMAX
C8P05Q
DIODE C8P
F8P06Q
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psion
Abstract: F8P04Q C8P04Q C8P04 C8P03Q
Text: SCHOTTKY BARRIER DIODE C8P03Q C8P04Q F8P03Q F8P04Q 8.9A/30— 40V FEATU R ES 0 Similar to T0-220AB Case 0 Fully Molded Isolation F-Type ° Dual Diodes - Cathode Common o Low Forward Voltage Drop « Low Power Loss, High Efficiency ° High Surge Capability
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T0-220AB
A/30--
C8P03Q
C8P04Q
F8P03Q
F8P04Q
psion
F8P04Q
C8P04
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C8P04Q
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE C8P03Q C8P04Q F8P03Q F8P04Q 8.9A/30~40V 1.41055 1.21047) FEATURES 10.40409) tiiS o iA • - M A X - • / J j3.5U3S) • Similar to T0-220AB Case *• 15.5 .610) 15.11 2.55U «) _4.8 .19) MAX » Dual Diodes - Cathode Common 10.3(.405)
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C8P03Q
C8P04Q
F8P03Q
F8P04Q
T0-220AB
85U12)
Volt04Q
bbl5123
C8P04Q
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE C8P05Q C8P06Q F8P05Q F8P06Q 8.9A/50— 60V FEATURES o similar to T0-220AB Case • Fully Molded Isolation F-Type ° Dual Diodes - Cathode Common • Low Forward Voltage Drop • Low Power Loss, High Efficiency High Surge Capability
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C8P05Q
C8P06Q
F8P05Q
F8P06Q
T0-220AB
bblS123
C8P05Q
F8P05Q
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Untitled
Abstract: No abstract text available
Text: f8p1K m 8 DRAM MT4LC8M8E1, MT4LC8M8B6 For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Top View • Single +3.3V +0.3V power supply • Industry-standard x8 pinout, timing, functions and
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096-cycle
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transistor SMD s72
Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той
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OT323
BC818W
MUN5131T1.
BC846A
SMBT3904,
MVN5131T1
SMBT3904
OT323
transistor SMD s72
nec mys 501
MYS 99
transistor 8BB smd
st MYS 99 102
kvp 81A
kvp 81A DIODE
Kvp 69A
kvp 86a
smd transistor A7p
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TA8810AN
Abstract: No abstract text available
Text: TOSHIBA TA8814N TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8814N COLOR TRANSIENT IMPROVOR IC FOR TV The TA8814N is an integrated circuit having the following two functions in the shrink DIP 20 pin package the CTI Color Transient Improvor function to improve
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TA8814N
TA8814N
500kHz
SDIP20-P-300-1
TA8810AN
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Untitled
Abstract: No abstract text available
Text: REVISION M0DS-F-8P8C-X-S-N-N-SM-XX 1-PACKAGING DPTIDN -TR: TAPE AND REEL SEE SHEET 2 - SUREACE MOUNT LED 2 -N: No LED LED 1 -N: No LED -SHEILDED BOM NUMBER 0.90 COMPONENT S U B -M 0D S -F-8P 8C -U -S M 1 M O D SH -F-02-SM 1 NOTES: 1. £ / REPRESENTS CRITICAL DIMENSION.
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-F-02-SM
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TA845
Abstract: TA84-5
Text: PRODUCT NUM BERS AVAILABLE PRODUCT NUMBER IN TAPE Ac REEL PACKAGING SHEET 7 3 3 4 7 - 104TR SHEET PRODUCT NUMBER 5 9 5 0 0 0 -Y 0 3 T R 2 7 3 3 5 4 -0 0 1 T R 5 9 5 0 0 0 -Y 0 8 T R 4 7 3 3 9 9 -Y 0 1 T R 10 9 5 6 1 5 -Y 0 4 T R 5 8 9 1 0 0 -Y 3 2 T R 3 9 5 6 1 5 -Y 0 6 T R
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104TR
95615-Y10TR
95615-Y14TR
Y18TR
Y24TR
F9QJ13
TA845
TA845
TA84-5
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RP1E
Abstract: No abstract text available
Text: DATASHEET PM PMC-1990262 ISSUE 4 PMC-Sierra, Inc. PM7380 FRt£tOM-j?P672 FRAME ENGINE AND DA TA U N K MANAGER 32P672 PM7380 FREEDM -32P672 FRAME ENGINE AND DATALINK MANAGER 32P672 DATASHEET PROPRIETARY AND CONFIDENTIAL ISSUE 4: JULY 2000 PMC-Sierra, Inc.
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PMC-1990262
PM7380
32P672
PM7380
FREEDMTM-32P672
PMCSS00237
FREEDM-32P672
RP1E
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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197/197X
S310N
W1P 59 transistor
W1p 48 TRANSISTOR
transistor w1P 83
ICM AP 1703
transistor SMD marked RNW
transistor BD139 PH 71
W1P 66 transistor
transistor w1P 91
Pnp transistor smd ba rn
w1p npn
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