DYNAMIC Search Results

DYNAMIC Result Highlights (5)

Part	Manufacturer	Description
TMS4030JL	Rochester Electronics LLC	TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22
4164-15FGS/BZA	Rochester Electronics LLC	4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA)
4164-12JDS/BEA	Rochester Electronics LLC	4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA)
4164-15JDS/BEA	Rochester Electronics LLC	4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA)
879893AYILF	Renesas Electronics Corporation	1:12 LVCMOS Dynamic Clock Switch/Generator

DYNAMIC Price and Stock

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TE Connectivity 1-178128-2 Headers & Wire Housings HSG REC 1X02C F/H
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	1-178128-2	Bulk	20,680		20	1 - 10 - 100 $0.419 1000 $0.337 10000 $0.314	Buy Now
TE Connectivity 1-178288-3 Headers & Wire Housings 3P RCPT HSG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	1-178288-3	Bulk	14,520		20	1 - 10 - 100 $0.345 1000 $0.305 10000 $0.29	Buy Now
TE Connectivity 316040-2 Headers & Wire Housings REC CONT. S L/P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	316040-2	Bulk	10,269		5	1 - 10 $1 100 $0.92 1000 $0.85 10000 $0.85	Buy Now
TE Connectivity 175289-2 Headers & Wire Housings TAB CONT. L L/P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	175289-2	Bulk	9,720		20	1 - 10 - 100 $0.376 1000 $0.344 10000 $0.344	Buy Now
TE Connectivity 1-175218-3 Headers & Wire Housings REC CONTACT L L/P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	1-175218-3	Each	5,739		14	1 - 10 - 100 $0.34 1000 $0.34 10000 $0.317	Buy Now

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DYNAMIC Datasheets (173)

Part	Manufacturer	Description	Datasheet Type	PDF
1410	Dynamic Measurements	SAMPLE AND HOLD AMPLIFIERS	Scan	PDF
1410	Dynamic Measurements	Very High Speed Sample and Hold Amplifiers	Scan	PDF
1411	Dynamic Measurements	Very High Speed Sample and Hold Amplifiers	Scan	PDF
1411	Dynamic Measurements	SAMPLE AND HOLD AMPLIFIERS	Scan	PDF
1810	Dynamic Measurements	HIGH VOLTAGE HIGH SPEED FET OPERATIONAL AMPLIFIERS	Scan	PDF
1810	Dynamic Measurements	High Voltage High Speed FET Operational Amplifiers	Scan	PDF
1811	Dynamic Measurements	HIGH VOLTAGE HIGH SPEED FET OPERATIONAL AMPLIFIERS	Scan	PDF
1811	Dynamic Measurements	High Voltage High Speed FET Operational Amplifiers	Scan	PDF
2470	Dynamic Measurements	14-Bit D/A Converters	Scan	PDF
2470	Dynamic Measurements	DIGITAL TO ANALOG CONVERTERS	Scan	PDF
2471	Dynamic Measurements	14-Bit D/A Converters	Scan	PDF
2471	Dynamic Measurements	DIGITAL TO ANALOG CONVERTERS	Scan	PDF
2800	Dynamic Measurements	ANALOG TO DIGITAL CONVERTERS	Scan	PDF
2801	Dynamic Measurements	ANALOG TO DIGITAL CONVERTERS	Scan	PDF

2802	Dynamic Measurements	ANALOG TO DIGITAL CONVERTERS	Scan	PDF
2803	Dynamic Measurements	ANALOG TO DIGITAL CONVERTERS	Scan	PDF
2804	Dynamic Measurements	ANALOG TO DIGITAL CONVERTERS	Scan	PDF
2805	Dynamic Measurements	ANALOG TO DIGITAL CONVERTERS	Scan	PDF
2806	Dynamic Measurements	ANALOG TO DIGITAL CONVERTERS	Scan	PDF
2807	Dynamic Measurements	ANALOG TO DIGITAL CONVERTERS	Scan	PDF

...

DYNAMIC Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
UM5583 Abstract: UM55 SPKP rs 355 integrated circuits 5583H Text: UMC UM5583 3 Sec Recording / Playback 1C Features • "BEEP" sound indicates to start recording and memory full for manual playback ■ Built-In AGC Automatic Gain Control to enlarge input dynamic range ■ Built-in low pass filter ■ Built-in microphone amplifier	OCR Scan	PDF	UM5583 UM5583 UM5583H UM55 SPKP rs 355 integrated circuits 5583H
TMS4116 Abstract: TMS4132 Text: MOS LSI TMS 4132 JDL 32,768-BIT DYNAMIC RANDOM-ACCESS MEMORY NOVEMBER 1979 32,768 «AX SUPPLY 1 X 1 Organization 10% Tolerance on All Supplies • All Inputs Including Clocks TTL-Compatible	OCR Scan	PDF	768-BIT 18-PIN 200ACCESS 4132JD TMS4116 TMS4132
A9RV Abstract: 5s a315 A327 Text: TOSHIBA TC514900AJLL-70/80 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJLL is the new generation dynamic RAM organized 524,288 word by 9 bit. The TC514900AJLL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit	OCR Scan	PDF	TC514900AJLL-70/80 TC514900AJLL TC514900AJLI/70/80 TC514900AJLL70/80 A9RV 5s a315 A327
tms4256 Abstract: TMS4266 Text: INSTR TM4256EL9, TM4256GU9 262,144 BY 9-BIT DYNAMIC BAM MODULES 7“-ifc-23-/7 25E D SEPTEMBER 1986 — REVISED M ARCH 1968 A SIC /MEMORY 262,144 x 9 Organization TM4266EL9 . . . L SMQLE-IN-UNE PACKAGE (TOP VIEWl_ Slngla 5-V Supply (10% Tolerance)	OCR Scan	PDF	U17ES 077GC TM4256EL9, TM4256GU9 -ifc-23-/7 TM4266EL9 30-Pln TM4256EL9) TM4266GU9) tms4256 TMS4266
4A04I Abstract: tc514100a Text: TC51441OAP/AJ/ASJ/AZ—70, TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 PRELIMINARY 1,048,576 W ORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC51441 OAP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as	OCR Scan	PDF	TC51441OAP/AJ/ASJ/AZ-- TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 TC51441 TC514410AP/AJ/ASJ/AZ 350mil) TC514100AP/AJ/ASJ/AZ. TC5141OOAP/AJ/ASJ/AZ-60 4A04I tc514100a
cq837 Abstract: No abstract text available Text: 4J« - »t TOSHIBA HYBRID D IG ITA L INTcGRATED CIRCUIT INTEGRATED CIRCUIT TO SHIBA THM 364080AS THM 364080ASG TECHNICAL DATA - 60. 70. 80, 10 - 60, 70, 80. 10 TENTATIVE DATA 4194,304 W O R D S X 36 BIT D YN AM IC RA M MODULE DESCRIPTION The THM364080AS/ASG is a 4,194,304 words by 36 bits dynamic RA M module which assembled 36	OCR Scan	PDF	364080AS 364080ASG THM364080AS/ASG TC514100ASJ 364080ASG A0-A10 THM36408QAS THM364080AS THM364080ASG cq837
BE423 Abstract: No abstract text available Text: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro	OCR Scan	PDF	TC5118325BJ/BFT-70 TC5118325BJ/BFT TC5118325BJ/ 400mil) I/024 I/025 I/032 BE423
TC514170BJ-80 Abstract: tc514170 TC514170BJ80 Text: TOSHIBA TC514170BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514170BJ is the new generation dynam ic RAM organized 262,144 word by 16 bit. The TC514170BJ utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit techniques	OCR Scan	PDF	TC514170BJ-70/80 TC514170BJ TC514170BJ-80 tc514170 TC514170BJ80
TM4SN64EPN10 Abstract: TM2SN64EPN-10 TM48N64EPN TM4SN64EPN-10 TMS626812 Text: TM2SN64EPN 2097152 BY 64-BIT TM4SN64EPN 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES _ SYNCHRONOUS CLOCK CYCLE TIME CK3 , {CL = 3 t ACCESS TIME CLOCK TO OUTPUT >CK2 CL = 2) CK3 (CL = 3) *CK2 (CL = 2) • • • • • • • •	OCR Scan	PDF	TM2SN64EPN 64-BIT TM4SN64EPN SMMS696 TM2SN64EPN. TM4SN64EPN 66-MHz 168-Pin TM4SN64EPN10 TM2SN64EPN-10 TM48N64EPN TM4SN64EPN-10 TMS626812
Untitled Abstract: No abstract text available Text: TM4164EC4 65,536 BY 4-BIT DYNAMIC RAM MODULE NOVEMBER 1983 - REVISED NOVEMBER 1985 SINGLE-IN-UNE PACKAGE 6 5 ,5 3 6 X 4 Organization TOP VIEW Single 5-V Supply (10% Tolerance) 22-Pin Single-in-Line Package (SIP) Utilizes Four 64K Dynamic RAMs in Plastic	OCR Scan	PDF	TM4164EC4 22-Pin
wc 2c Abstract: No abstract text available Text: SMJ4416 16.384-WORD BY 4-BIT DYNAMIC RAM AUGUST 1980 JO PACKAGE 1 6 ,3 8 4 x 4 O rg anizatio n TO P V IE W S ingle 5 -V S u p p ly ( ± 1 0 % T olerance) g P erfo rm a nce Ranges ACCESS T IM E • DQ1 C C2 DQ 2C Ul8 Dvss 17 3 D Q 4 3 16 4 15 "2C A S "2D Q 3	OCR Scan	PDF	SMJ4416 384-WORD J4416 wc 2c
TC5117445CSJ Abstract: No abstract text available Text: TO SHIBA_ TC5117445CSJ-40,-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORD BY 4-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5117445CSJ is an EDO (Hyper Page) dynamic RAM organized as 4,194,304 words by 4 bits. The	OCR Scan	PDF	TC5117445CSJ-40 304-WORD TC5117445CSJ 28-pin 17445CSJ-40 TC5117445CSJ SOJ28
44c256 Abstract: 3034C Text: SMJ44C256 262144 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY _ SGMS034C - MAY 1989 - B E V ILO JUNE 1965 Organization. . . 262144 Words x 4 Bits Single 5-V Supply 10% Tolerance Processed to MIL-STD-833, Class B Performance Ranges: 3-State Unlatched Output	OCR Scan	PDF	SMJ44C256 SGMS034C MIL-STD-833, SMJ44C256-80 SMJ44C256-10 SMJ44C256-12 SMJ44C256-15 20-Pin 300-Mil 20-Lead 44c256 3034C
TC51V18160 Abstract: No abstract text available Text: INTEGRATED TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TC51V18160 C S / CFTS - 60 TOSHIBA TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 1,048,576 WORD x16 BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC51V1S160CJS-CFTS is the fast page dynamic R A M organized 1,048,576 words by 16 bits.	OCR Scan	PDF	TC51V18160 TC51V1S160CJS-CFTS TC51V18160CJS TC51V18160CJS/CFTS 73MAX TSOP50-P-400) 875TYP 35MAX TC51V18160CJS/CFT>

Untitled Abstract: No abstract text available Text: TO SHIBA THMY644071EG-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY644071EG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416FT DRAMs and an unbuffer on a printed circuit board.	OCR Scan	PDF	THMY644071EG-10 304-WORD 64-BIT THMY644071EG TC59S6416FT THMY644071
Untitled Abstract: No abstract text available Text: h- .5 0 -H .2 5 0 r 1 .075 — .19 7 .0 5 5 I F □ □ □ .031 — r Î •lo .38 I HIGH DYNAMIC RANGE DOUBLE BALANCED MIXER h-— -19 MAX —- - T .3 5 1 TRAK MICROWAVE RF MIXER $ M X R /3 C F -0 2 H D SPECIFICATIONS: IF OPERATING FREQUENCY	OCR Scan	PDF	MXR/3CF-02HD
Untitled Abstract: No abstract text available Text: TM4EP72BPB, TM4EP72BJB, 4194304 BY 72-BIT TM4EP72CPB, TM4EP72CJB 4194304 BY 72-BIT EXTENDED-DATA-OUT BUFFERED DYNAMIC RAM MODULES _ _ • • • • Long Refresh Periods: - TM4EP72CxB: 64 ms 4096 Cycles	OCR Scan	PDF	TM4EP72BPB, TM4EP72BJB, 72-BIT TM4EP72CPB, TM4EP72CJB SMMS886-AUGUST TM4EP72BxB 32M-byte, 168-pin,
Untitled Abstract: No abstract text available Text: PRELIMINARY 4,194,304 WORD x 1 BIT DYNAMIC RAM DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.	OCR Scan	PDF	TC514101AP/AJ/ASJ/AZ 300/350mil) TC514101AP/ASJ/AZ. TC514101AP/AJ/ASJ/A2-70, TC514101AP/AJ/ASJ/AZ-80 TC514101AP/AJ/ASJ/AZ-10
Untitled Abstract: No abstract text available Text: h- .5 0 - - .2 5 0 \|.0 7 5 — .19 r t 1 t 1 RF□ 0 5 5 -1 r .031 — c ri T -lo .38 T - .35 1 I IF MATERIAL El STANDARD □ SPECIAL ° BASE o COVER ° MARKING » FINISH F R -4 VECTRA LASER SOLDER TIN HIGH DYNAMIC RANGE DOUBLE BALANCED MIXER MAX	OCR Scan	PDF	MXR/6EF-02HD
EN 1452-3 Abstract: J416 Text: SMJ4164 65.536-BIT DYNAMIC RANDOM-ACCESS MEMORY JU LY 1985 - J D PA C K A G E 6 5 ,5 3 6 x 1 Organization TO P V IEW Single 5-V Supply (± 1 0% Tolerance) w Ç AOQ A2C A1 C VddC 8 Long Refresh Period . . . 4 ms FG PA C K A G E Low Refresh Overhead Time . .	OCR Scan	PDF	SMJ4164 536-BIT EN 1452-3 J416
TC514265DJ Abstract: TC514265D TC514265 SOJ40-P-400 Text: TOSHIBA TC514265DJ/DFT-50/60/70 PRELIMINARY 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TheTC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TheTC514265DJ/ DFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide oper	OCR Scan	PDF	TC514265DJ/DFT-50/60/70 TheTC514265DJ/DFT TheTC514265DJ/ TC514265DJ/DFT TC514265D J/DFT-50/60/70 DR04041293 TC514265DJ TC514265 SOJ40-P-400
Untitled Abstract: No abstract text available Text: TOSHIBA TC514800AJ/AZ/AFT-70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJ/AZ/AFT is the new generation dynam ic RAM organized 524,288 word by 8 bit. The TC514800A J/AZ/AFT utilizes T oshiba’s CM OS silicon gate process technology as w ell as advanced circuit	OCR Scan	PDF	TC514800AJ/AZ/AFT-70/80 TC514800AJ/AZ/AFT TC514800A
TC5117405 Abstract: No abstract text available Text: TOSHIBA THM328025BS/BS&60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are	OCR Scan	PDF	THM328025BS/BS THM328025BS/BSG TC5117405BSJ 704mW THMxxxxxx-60) 074mW THMxxxxxx-70) DM32020695 M328025BS/BSG THM328025BS/BSG-6Q/70 TC5117405
336d Abstract: LM series voltage regulators ADJ 33-6L diode Text: LM236-2.5, LM336-2.5 2.5-V INTEGRATED REFERENCE CIRCUITS -REVISED AUGUST 1991 D3289, NOVEMBER 1 D PACKAGE Low Temperature Coefficient TOP VIEW Wide Operating C u rre n t. . . 400 (¿A to 10 mA NC[ NC[ NC[ ANODE[ 0.2-Q Dynamic Impedance • ±1 % Tolerance Available	OCR Scan	PDF	LM236-2 LM336-2 D3289, 336d LM series voltage regulators ADJ 33-6L diode

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DYNAMIC Search Results

DYNAMIC Result Highlights (5)

DYNAMIC Price and Stock

TE Connectivity 1-178128-2

TE Connectivity 1-178288-3

TE Connectivity 316040-2

TE Connectivity 175289-2

TE Connectivity 1-175218-3

DYNAMIC Datasheets (173)

DYNAMIC Datasheets Context Search

UM5583

TMS4116

A9RV

tms4256

4A04I

cq837

BE423

TC514170BJ-80

TM4SN64EPN10

Untitled

wc 2c

TC5117445CSJ

44c256

TC51V18160

Untitled

Untitled

Untitled

Untitled

Untitled

EN 1452-3

TC514265DJ

Untitled

TC5117405

336d