DY TRANSISTOR Search Results

QM75DY-24

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM7 5 DY-2 4 • Ic • V c ex • hFE Collector current. 75A Collector-emitter voltage. 1200V DC current gain. 75

smd code book B3 transistor

Contextual Info: SPP 80N03 Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS on 0.006 £2 A 80 b V 30 • dy/df rated

30N03

Abstract: marking code ff p SMD Transistor smd transistor TN 6 pin TRANSISTOR SMD CODE XI G1337 TRANSISTOR SMD MARKING CODE XI SPB30N03 SPP30N03 SMD transistor 2x sot 23 smd code book B3
Contextual Info: SPP 30N03 Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vbs • Enhancement mode Drain-Source on-state resistance ^ D S o n • Avalanche rated Continuous drain current b V 30 0.023 a A 30 • dy/df rated

Contextual Info: SIEMENS BUZ 101L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dy/d? rated • Low on-resistance • t7 5 °C operating temperature Pin 1 Pin 2 Pin 3 • also in TO-220 SMD available Type BUZ 101L Vds

FT 3528

Abstract: SAA7350 3528 20 PINS TDA1547 g2g 573 3528 pins 20
Contextual Info: Philips S em iconductora Linear P roducts Prelim inary specification Dual top-performance bitstream DAC TDA1547 FEATURES • Top-grade audio performance * very low harmonic distortion - high signal-to-noise ratio - w ide dy n a m ic ran ge of approxim ately 108 dB not

BB3581

Abstract: HIGH-VOLTAGE OPERATIONAL AMPLIFIER
Contextual Info: T EL E DY N E COMPONENTS 3bE D 0^17bQ2 00Q7bH2 4 «TSC WTELEDYNE COMPONENTS 1481 OPERATIONAL AMPLIFIER — HIGH-VOLTAGE FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The 1481 is a high-voltage operational amplifier capable of operating with supply voltages as high as +75V or as low

Contextual Info: BOUMAR/UHITE TECHNOLOGY T o dY J ISbBfaTfl 0DG005D 4 T -58-11-13 m C u s t o m D e v i c e s , la t e . Applications The 2802 positive voltage regulator, and the 2803 negative voltage regulator are designed to power analog or d ig ita l circu its. H y b r iid F C ir c a itl

tone Dialer

Abstract: ba20 transistor lr48202
Contextual Info: SHARP EL EK / MELEC D IV 1SE o | a ific n n a a c m w P u ls e /T o n e D ia le r LSI LR 48202 LR48202 • / -Dy-Ö-? - Pulse/Tone Dialer LSI D e s crip tio n Pin Connections The LR48202 is a CMOS pulse/tone dialer LSI poviding auto-dialing and redialing. It features a builtin 32-digit X 20 or 16-digit X 40 one-touch or twotouch memory and 32-digit redial memory.

0P279

Abstract: TI OP279 CP279 najog
Contextual Info: AN A LO G D E V IC E S Rail-toRail high Output Current Operational Anplifier 0P279 F U N C T IO N A L B L O C K D IA G R A M FEATURES R a il-to -R a il In p u ts a n d O u t p u t s 8 - L ea d N a rr o w B o dy 8 - L ead P la s tic D IP H ig h O u tp u t C u rr e n t: ± 8 0 m A

185t2

Abstract: bdy28 BF 184 184T2 BDY26 BDY27 185T2A 185T2B
Contextual Info: * B D Y 2 6 183 T2 *B D Y 2 7 184 12 *B D Y 28 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA TRANSISTORS NPN SILICIUM , MESA DIFFUSES ^ Preferred device Dispositif recommandé LF large signal power amplification 180 V 200 V BDY 26 , 183 T2 BDY 27 , 184 T2

2N 3055

Abstract: 2N3055 ESM434 BDX 71 2N5294 2N6109 2N6111 ESM435 ESM142 84132N
Contextual Info: N PN Power transistors « Homobase » L l: amplifier and switching » Transistors de puissance « Homobase » Amplification et commutation BF Case f*tot m * B oîtie r O ui _ Compì. > Type C (A ^21E m in max A / (A) Tease 25 C / v CEsat iv i y 'B (A )

2N6155

Abstract: 2N67 2N6756 2N6156 D-05N md-141 2N6755
Contextual Info: Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 60V -100V rDs on = 0.18 fi and 0.25 fl Features: • SO A is p o w e r-d is s ip a tio n lim ite d

WPCE773LA0DG

Abstract: bg22 transistor G1454 TPS51125 9LPRS929 transistor bc47 9lprs9 BGA479-SKT-8-GP-U3 winbond wpce773la0dg transistor BG14
Contextual Info: 5 4 3 2 SM30 Block Diagram D 1 SYSTEM DC/DC Project code: 91.4BT01.001 PCB P/N : 48.4BT01.001 Revision : 08239-SA Mobile CPU Penryn CLK GEN. 5V_S5 7A DCBATOUT PCB STACKUP SMSC 5V_AUX_S5 TOP SYSTEM DC/DC VCC INPUTS DDR3 LCD Cantiga 800/1033 12,13 MHz 1D05V_M(16A)

diode b1c

Contextual Info: SK 85 MH 10 T MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET L<BB LOBB Q< Q<W ?- G HI J$K 407,- %*8,23.-, -', .6.,+ ?- G HI ;SN> J$T M> *' X M &-T ?- G SN J$T M> ?Y Inverse diode SEMITOP 2 MOSFET Module Q] G @ Q< Q]W G @ Q<W ?Y Preliminary Data

MAX8778

Abstract: ECE5021 EMC4001 MEC5025-NU ec isl6236 P26SD mec5025 ICS951463 25VF016 U107D
Contextual Info: A B C D E Battery Charger ISL88731 Parker Block Diagram CPU Clock Generator ICS 951463 U1400 FW289 4 Intel Mobile CPU Yonah / Merom ULV FSB:533Mhz 4 HOST BUS U7500 JW620 +PBATT INPUTS OUTPUTS +PWR_SRC +VCC_CORE System DC/DC DDRII 533/667MHz RS600ME ISL6236/MAX8778

Contextual Info: FQD4P40 P-Channel QFET MOSFET -400 V, -2.7 A, 3.1 Ω Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,

Contextual Info: FQP12P10 P-Channel QFET MOSFET -100 V, -11.5 A, 290 mΩ Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,

Contextual Info: FQT2P25 P-Channel QFET MOSFET -250 V, -0.55 A, 4.0 Ω Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,

Contextual Info: FQB9P25 P-Channel QFET MOSFET -250 V, -9.4 A, 620 mΩ Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state

Contextual Info: FQP11P06 P-Channel QFET MOSFET -60 V, -11.4 A, 175 mΩ Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,

orcad schematic symbol for rj45

Abstract: EPSON C691 MAIN SB450 southbridge KB3910 U62A SCD1U25V3ZY-3GP WISTRON power sequence amp c49 100v 39p hy5ps561621a Wistron Corporation
Contextual Info: 5 4 3 2 1 See 'TEXT' in 0MEMO or 1MEMO property in component Bolsena-E AB2 Block Diagram Dummy when use '10/100' Dummy when use 'GIGA' 200-PIN DDR SODIMM Dummy when use 'UMA' CLK GEN IDT CV1373 Dummy when use 'DIS' D AMD CPU Dummy when use 'IDE' HyperTransport

KB3910

Abstract: WISTRON power sequence 208017 SCD1U25V3ZY-3GP orcad schematic symbol for rj45 ATI SB450 MAX1909 M54-p C828 transistors Wistron Corporation
Contextual Info: 5 4 3 2 1 See 'TEXT' in 0MEMO or 1MEMO property in component Bolsena-E AB2 Block Diagram Dummy when use '10/100' Dummy when use 'GIGA' 200-PIN DDR SODIMM Dummy when use 'UMA' CLK GEN IDT CV1373 Dummy when use 'DIS' D AMD CPU Dummy when use 'IDE' HyperTransport

winbond wpce773la0dg

Abstract: VT1702S G1454R41U ICS9LPRS480BKLFT SCD1U25V3KX-GP MMBT3904-4-GP c5696 WPCE773LA0DG 1gp transistor winbond 25x16
Contextual Info: 5 4 3 2 SJM50-PU Block Diagram 1 SYSTEM DC/DC Project code: 91.4FC01.001 PCB P/N : 48.4FC01.0SB REVISION : 08256-SB 40 TPS51125 INPUTS OUTPUTS 5V_S5 8A 3D3V_S5(6A) 5V_AUX_S5 DCBATOUT D AMD Giffin CPU S1G2 (35W) Thermal Sensor CLK GEN. SMSC 31 Video RAM 4,5,6,7

WPCE773LA0DG

Abstract: TPS51125 Atheros AR8131 WISTRON power sequence RT8202 Realtek ALC269Q High Definition Audio NDS0610-NL-GP X-14D31818M-35GP Wistron Corporation winbond wpce773la0dg
Contextual Info: 5 4 3 JM41 Block Diagram Intel D CLK GEN. 1 SYSTEM DC/DC Project code: 91.4CQ01.001 PCB P/N : 48.4CQ01.0SA REVISION : 08266-SA 36 TPS51125 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(5A) DCBATOUT 5V_AUX_S5 PCB STACKUP 3D3V_AUX_S5 Thermal Sensor CPU TOP L1 S L2 32 EMC2103