TRANSISTOR K 314
Abstract: NEC semiconductor
Text: DATA SHEET SILICON TRANSISTOR 2SD2463 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2463 is a Darlington connection transistor with on- PACKAGE DRAWING UNIT: mm chip dumper diode in collector to emitter and zener diode in
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2SD2463
2SD2463
C11531E)
TRANSISTOR K 314
NEC semiconductor
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NEC semiconductor
Abstract: C11531E dumper diode dumper
Text: DATA SHEET COMPOUND TRANSISTOR CE2A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2A3Q is a transistor of on-chip high hFE resistor PACKAGE DRAWING UNIT: mm incorporating dumper diode in collector to emitter as protect
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C11531E)
NEC semiconductor
C11531E
dumper
diode dumper
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Transistor NEC 30
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR CE1N2R on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1N2R is a transistor of on-chip high hFE resistor PACKAGE DRAWING UNIT: mm incorporating dumper diode in collector to emitter and zener diode
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NEC diode
Abstract: transistor marking 7D 2SD1695 C11531E
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1695 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1695 is a Darlington connection transistor and PACKAGE DRAWING (UNIT: mm) incorporates a dumper diode between the collector and emitter and
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2SD1695
2SD1695
NEC diode
transistor marking 7D
C11531E
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Untitled
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR CE2F3P on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA
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CE1F3P
Abstract: D1617
Text: '$7$ 6+ 7 &203281' 75$16,6725 &( 3 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU )RU PLGVSHHG VZLWFKLQJ The CE1F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for
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cycle50
CE1F3P
D1617
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2SD1843
Abstract: diode dumper
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT: mm) dumper diode in collector to emitter and zener diode in collector to
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2SD1843
2SD1843
diode dumper
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ce1a3q
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR CE1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for
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2SC5858
Abstract: transistor c5858 c5858 2sc5570 C5446 S2055n 2sc 5587 2SC5588 2SC5587 2SC5859
Text: 1 Horizontal – Deflection – Output Power Transistors February 2005 TOSHIBA CORPORATION Semiconductor Company Discrete Semiconductor Division Transistors DP0540034_01 2 High Voltage TR for TV / Monitor 1. Progressive/ High Vision/Digital TV Part Number
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DP0540034
2SC5716
2SC6041
2SC5857
2SC5858
2SC5859
2SC5997
2SC5748
2SC5588
2SC5588(
2SC5858
transistor c5858
c5858
2sc5570
C5446
S2055n
2sc 5587
2SC5588
2SC5587
2SC5859
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IC-3479
Abstract: IC-8359 pa1428a uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1428A is NPN silicon epitaxial Darlington Power (in millimeters) Transistor Array that built in Surge Absorber 4 circuits
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PA1428A
PA1428A
PA1428AH
IC-3479
IC-8359
uPA1428
transistor array high speed
uPA1428AH
IEI-1213
PA1428
MF-1134
PA1428AH
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uPA1428
Abstract: uPA1428AH PA1428AH IEI-1213 MEI-1202 MF-1134
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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1000C
Abstract: 2SB1149 diode dumper
Text: NEC DESCRIPTION PNP SILICON DARLINGTON TRANSISTOR 2SB1149 The 2SB1149 is a darlington transistor built-in dumper diode PACKAGE DIMENSIONS at E-C. in millimeters inches It is suitable for use to operate from IC without predfiver, such 8.5 MAX. (0.334 MAX.)
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2SB1149
2SB1149
1000C
1000-lB
1000C
diode dumper
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Tf 227
Abstract: 2SB1093 2SD1579 dumper diode
Text: PIMP SILICON DARLINGTON TRANSISTOR 2SB1093 DESCRIPTION FEATURES The 2SB1093 is a darlington transistor including a dumper diode at C-E. It is suitable for general driving use, such as hammer, solenoid, lamp or motor. • High DC currentijain. • High current capability, wide ASO and low collector saturation
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2SB1093
2SB1093
2SD1579.
VCC--50
Tf 227
2SD1579
dumper diode
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2SD986
Abstract: 2SD985 2SB795 2SB794 Nec 2sd986
Text: NPN SILICON DARLINGTON POWER TRANSISTORS 2SD985.2SD986 DESCRIPTION The2SD985, 2SD986 are darlington transistors built-in dumper PACKAGE DIMENSIONS diodes at E-C. They are suitable fo r use to operate from 1C w ith o u t predriver, in millimeters inches 8.5 MAX.
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2SD985
2SD986
2SD985,
2SD986
2SB794,
2SB795
1000-lB
2SB794
Nec 2sd986
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dumper
Abstract: darlington transistor with built-in temperature 2SD1693 dumper diode
Text: NPN SILICON DARLINGTON TRANSISTOR 2SD1693 DESCRIPTION The 2SD1693 is a darlington transistor built-in a zener diode at PACKAGE DIMENSIONS in millimeters inches B-C and a dumper diode at E-C. 8.5 MAX. (0.334 MAX.) It is suitable for use to operate from IC without predriver, such as
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2SD1693
2SD1693
100m200m
dumper
darlington transistor with built-in temperature
dumper diode
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dumper
Abstract: 2SB1318 diode dumper bu500
Text: NEC D ES C R IP TIO N PNP SICICON TRANSISTOR 2SB1318 The 2SB1318 is a darlington transistor built-in dumper diode at E-C. PACKAG E D IM E N S IO N S in millimeters inches It is suitable for use to operate from IC w ithout predriver, such as hammer driver.
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2SB1318
2SB1318
VCC--40V
dumper
diode dumper
bu500
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2SD985
Abstract: 2SB794 2SB795 2SD986
Text: PNP SILICON DARLINGTON POWER TRANSISTORS 2SB794.2SB795 D E S C R IP TIO N The 2SB794, 2SB795 are darlington transistors built-in dumper PA C K A G E D IM E N S IO N S diodes at C-E. in millimeters inches They are suitable for use operating from 1C w ithout predriver,
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2SB794
2SB795
2SB794,
2SB795
2SD985,
2SD986
2SB00
2SD985
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transistor bc 248
Abstract: transistor BC 247 ic 5518 2SB1150 KPR12
Text: NEC DESCRIPTION PNP SILICON DARLINGTON TRANSISTOR 2SB1150 The 2SB1150 is a darlington transistor built-in a zener diode at PACKAGE DIMENSIONS B-C and a dumper diode at E-C. in millimeters inches 8.5 MAX. 2.8 MAX. (0.334 MAX.) H (0.11 MAX.) It is suitable for use to operate from IC without predriver, such as
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2SB1150
2SB1150
m500m
transistor bc 248
transistor BC 247
ic 5518
KPR12
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diode ssil
Abstract: 2SD1939 PA33 dumper diode KAG TRANSISTOR
Text: NEC NPN SILICON DARLINGTON TRANSISTOR 2SD1939 D E S C R IP TIO N The 2SD 1939 is a darlington transistor including a dumper diode PAC KAG E D IM E N S IO N S at E-C . in m illim èters inches It is suitable fo r general driving use, such as hammer, solenoid,
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2SD1939
2SD1939
diode ssil
PA33
dumper diode
KAG TRANSISTOR
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d 1698
Abstract: d1698 2SD1698 motor printer Transistor 2SD1698 dumper
Text: NPN SILICON TRANSISTOR 2SD1698 D E S C R IP T IO N The 2S D 1698 is NPN silicon epitaxial darlington transistor PAC KAG E D IM E N S IO N S designed for pulse m otor, printer driver, solenoid driver. FEATURES • High DC Current gain. • Includes a dumper diode at E-C.
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2SD1698
2SD1698
d 1698
d1698
motor printer
Transistor 2SD1698
dumper
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2SD1692
Abstract: dumper diode
Text: IM F f /N P N SILICON DARLINGTON TRANSISTOR / D E S C R IP TIO N 2SD1692 The 2S D 1692 is a darlington transistor built-in dumper diode PAC KAG E D IM E N S IO N S at E-C. in millimeters inches It is suitable fo r use to operate from IC w ith o ut predriver, such
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2SD1692
2SD1692
fo-11
dumper diode
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diode dumper
Abstract: 2SD1630
Text: NPN SILICON DARLINGTON POWER TRANSISTOR 2SD1630 D E S C R IP T IO N The 2 SD 1 6 3 0 is a darlington transistor built-in a zener diode at P A C K A G E D IM E N S IO N S B-C and a dumper diode at E-C. in millimeters inches It is suitable for use to operate from IC w ithout predriver, such
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2SD1630
2SD1630
01IWVS
diode dumper
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