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    DUAL-GATE MOSFET Search Results

    DUAL-GATE MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    DUAL-GATE MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    95160

    Abstract: MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs TMF3201J Dual-Gate Mosfet 9935 mosfet 95160 3
    Text: Preliminary Specification TMF3201J Dual N-Channel Dual-Gate MOSFET □ Description SOT363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with


    Original     		PDF TMF3201J OT363 TMF3201J OT363 95160 MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs Dual-Gate Mosfet 9935 mosfet 95160 3

    Untitled

    Abstract: No abstract text available
    Text: TMF3201J Semiconductor Dual Gate MOSFET □ Description SOT-363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It consists of two equal dual gate MOSFET amplifiers with shared


    Original     		PDF TMF3201J OT-363 TMF3201J OT-363

    switch-mode voltage regulators

    Abstract: No abstract text available
    Text: SM72482 SM72482 SolarMagic Dual 5A Compound Gate Driver Literature Number: SNVS696B SM72482 SolarMagic Dual 5A Compound Gate Driver General Description The SM72482 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency.


    Original     		PDF SM72482 SM72482 SNVS696B switch-mode voltage regulators

    MARKING CODE Zi sot363

    Abstract: TMF3201J ZI Marking Code transistor MOSFET 9935
    Text: TMF3201J Semiconductor Dual Gate MOSFET □ Description The TMF3201J is an N-channel enhancement type, dual- SOT-363 insulated gate, field-effect transistor that utilizes MOS Unit in mm construction. It consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads. The source


    Original     		PDF TMF3201J TMF3201J OT-363 OT-363 KSD-A5S001-000 MARKING CODE Zi sot363 ZI Marking Code transistor MOSFET 9935

    Untitled

    Abstract: No abstract text available
    Text: LM5110 LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability Literature Number: SNVS255A LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability General Description The LM5110 Dual Gate Driver replaces industry standard


    Original     		PDF LM5110 LM5110 SNVS255A

    3n212

    Abstract: No abstract text available
    Text: 3N212 DUAL GATE MOSFET N-CHANNEL DEPLETION MODE DESCRIPTION: The ASI 3N212 is a Dual Gate Mosfet Designed for Low Noise Mixer Applications in VHF Receivers. FEATURES: • Integrated Gate Protection • High Conversion Gain PACKAGE STYLE TO-72 MAXIMUM RATINGS


    Original     		PDF 3N212 3N212

    Untitled

    Abstract: No abstract text available
    Text: NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – Crss = 0.03pf Max


    Original     		PDF NTE454 NTE454 20Vdc 30Vdc 200MHZ

    NTE454

    Abstract: 200MHZ VG15
    Text: NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – Crss = 0.03pf Max


    Original     		PDF NTE454 NTE454 20Vdc 30Vdc 200MHZ 200MHZ VG15

    Untitled

    Abstract: No abstract text available
    Text: LM5111 LM5111 Dual 5A Compound Gate Driver Literature Number: SNVS300F LM5111 Dual 5A Compound Gate Driver General Description The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more


    Original     		PDF LM5111 LM5111 SNVS300F

    Low Capacitance MOS FET 13005

    Abstract: GL 7815 13005 equivalent internal transistor 13005 transistor 13005 CIRCUIT 13005 13005 TRANSISTOR A1 marking code amplifier marking code 718 sot363 BF1205C
    Text: BF1205C Dual N-channel dual gate MOS-FET Rev. 01 — 18 May 2004 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1


    Original     		PDF BF1205C BF1205C OT363 Low Capacitance MOS FET 13005 GL 7815 13005 equivalent internal transistor 13005 transistor 13005 CIRCUIT 13005 13005 TRANSISTOR A1 marking code amplifier marking code 718 sot363

    Low Capacitance MOS FET 13005

    Abstract: BF1205C
    Text: BF1205C Dual N-channel dual gate MOS-FET Rev. 02 — 15 August 2006 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1


    Original     		PDF BF1205C BF1205C OT363 Low Capacitance MOS FET 13005

    Untitled

    Abstract: No abstract text available
    Text: BF1205C Dual N-channel dual gate MOS-FET Rev. 3 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1


    Original     		PDF BF1205C BF1205C OT363

    Untitled

    Abstract: No abstract text available
    Text: BF1205C Dual N-channel dual gate MOS-FET Rev. 3 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1


    Original     		PDF BF1205C BF1205C OT363

    BF1102

    Abstract: BF1102R
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Jul 01 2000 Apr 11 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FETs FEATURES


    Original     		PDF MBD128 BF1102; BF1102R OT363 BF1102 R77/03/pp14 BF1102 BF1102R

    BF1203

    Abstract: FET MARKING CODE 8203 dual mosfet
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Dec 04 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203


    Original     		PDF MBD128 BF1203 OT363 613512/03/pp20 BF1203 FET MARKING CODE 8203 dual mosfet

    K 2611 MOSFET

    Abstract: mosFET K 2611 m4t made K 2611 MOSFET VOLTAGE RATING BF1215 N-CHANNEL dual gate ultra low noise vhf LOW NOISE AMPLIFIER
    Text: BF1215 Dual N-channel dual gate MOSFET Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch.


    Original     		PDF BF1215 BF1215 OT363 K 2611 MOSFET mosFET K 2611 m4t made K 2611 MOSFET VOLTAGE RATING N-CHANNEL dual gate ultra low noise vhf LOW NOISE AMPLIFIER

    Untitled

    Abstract: No abstract text available
    Text: BF1215 Dual N-channel dual gate MOSFET Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch.


    Original     		PDF BF1215 BF1215 OT363

    "MARKING CODE W1*"

    Abstract: BF1102 BF1102R n-channel dual 3010 marking code W2
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Jul 01 2000 Apr 11 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FETs FEATURES


    Original     		PDF MBD128 BF1102; BF1102R OT363 BF1102 603504/03/pp16 "MARKING CODE W1*" BF1102 BF1102R n-channel dual 3010 marking code W2

    9033 transistor

    Abstract: BF1203
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203


    Original     		PDF MBD128 BF1203 OT363 613512/02/pp20 9033 transistor BF1203

    MARKING 5F SOT363

    Abstract: BF1204 FET MARKING CODE km 1667
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Nov 13 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204


    Original     		PDF MBD128 BF1204 OT363 613512/02/pp12 MARKING 5F SOT363 BF1204 FET MARKING CODE km 1667

    BF1204

    Abstract: amplifier BF1204 mosfet handbook Dual Gate MOSFET graphs MCD960
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2001 Apr 25 2010 Sep 16 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204


    Original     		PDF MBD128 BF1204 OT363 R77/03/pp13 BF1204 amplifier BF1204 mosfet handbook Dual Gate MOSFET graphs MCD960

    TRANSISTOR BF1204

    Abstract: BF1204
    Text: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2001 Apr 25 2010 Sep 16 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204 PINNING - SOT363


    Original     		PDF MBD128 BF1204 OT363 R77/03/pp13 TRANSISTOR BF1204 BF1204

    300 Amp mosfet

    Abstract: mosfet 400 amp MOSFET FOR 100khz SWITCHING APPLICATIONS 50 Amp Mosfet dual jfet vhf jfet 133 jfet transistor mosfet amp DUAL JFET Pch low voltage mosfet switch 3 amp
    Text: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application 132 JFET N-CH 133 JFET N-CH 221 Dual Gate MOSFET N-CH 222 Dual Gate MOSFET N-CH 312 JFET N-CH JFET P-CH 326 451 452 JFET N-CH JFET N-CH 454 Dual Gate MOSFET N-CH


    OCR Scan     		PDF 400MHz T0106 200MHz 18Typ 250pA tiMaias11! 300 Amp mosfet mosfet 400 amp MOSFET FOR 100khz SWITCHING APPLICATIONS 50 Amp Mosfet dual jfet vhf jfet 133 jfet transistor mosfet amp DUAL JFET Pch low voltage mosfet switch 3 amp

    MOSFET 4466

    Abstract: 4466 8 pin mosfet pin voltage 4466 mosfet
    Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT BF1102 Dual N-channel dual gate MOS-FET Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES


    OCR Scan     		PDF BF1102 OT363 BF1102 MOSFET 4466 4466 8 pin mosfet pin voltage 4466 mosfet