Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DUAL N-MOSFET SOT23 Search Results

    DUAL N-MOSFET SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    DUAL N-MOSFET SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (Ω) ID (A) 0.200 @ VGS= 4.5V 2.1 0.240 @ VGS= 2.5V 1.9 0.310 @ VGS= 1.8V 1.7 Description This new generation dual n-channel trench MOSFET from Zetex features low on-resistance


    Original     		ZXMN2088DE6 OT23-6 OT23-6 ZXMN2088DE6TA D-81541 PDF

    ZXMN2088

    Abstract: TS16949 ZXMN2088DE6 ZXMN2088DE6TA SOT23-6 MARKING g2
    Text: Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (Ω) ID (A) 0.200 @ VGS= 4.5V 2.1 0.240 @ VGS= 2.5V 1.9 0.310 @ VGS= 1.8V 1.7 Description This new generation dual n-channel trench MOSFET from Zetex features low on-resistance


    Original     		ZXMN2088DE6 OT23-6 OT23-6 ZXMN2088DE6TA D-81541 ZXMN2088 TS16949 ZXMN2088DE6 ZXMN2088DE6TA SOT23-6 MARKING g2 PDF

    stu407d

    Abstract: STU432S STU419S stm8309 STU432 STM6930A STM6922 STU426S STU3525NL stu309dh
    Text: Selection Guide - Mosfet Product N Channel Product Rds on / m Ohm max Package Configuration Vds Vgs (±) ID PD (W) STF8220 DFN Dual-N 20 12 7.0 2 STA6610 PDIP-8 Dual-N 30 20 7.6 3 23.0 STA6620 PDIP-8 Dual-N 40 20 7.0 3 25.0 STA6968 PDIP-8 Dual-N 60 20 5.3


    Original     		STF8220 STA6610 STA6620 STA6968 STM9926 STM4884A STM4410A SDM4410 STM480-40 stu407d STU432S STU419S stm8309 STU432 STM6930A STM6922 STU426S STU3525NL stu309dh PDF

    marking 30 dual mosfet

    Abstract: dual mosfet "marking code 30" sot 26 Dual N-Channel MOSFET SPN6561 SPN6561S26RG 5V GATE TO SOURCE VOLTAGE MOSFET
    Text: SPN6561 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6561 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		SPN6561 SPN6561 marking 30 dual mosfet dual mosfet "marking code 30" sot 26 Dual N-Channel MOSFET SPN6561S26RG 5V GATE TO SOURCE VOLTAGE MOSFET PDF

    SPN6562

    Abstract: SOT-23-6L sot 26 Dual N-Channel MOSFET marking 30 dual mosfet SPN6562S26RG 5V GATE TO SOURCE VOLTAGE MOSFET
    Text: SPN6562 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6562 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		SPN6562 SPN6562 SOT-23-6L sot 26 Dual N-Channel MOSFET marking 30 dual mosfet SPN6562S26RG 5V GATE TO SOURCE VOLTAGE MOSFET PDF

    SOT-23-6L

    Abstract: SPN2622 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 sot 26 Dual N-Channel MOSFET dc inverter
    Text: SPN2622 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2622 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		SPN2622 SPN2622 SOT-23-6L Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 sot 26 Dual N-Channel MOSFET dc inverter PDF

    SPN6561

    Abstract: SOT-23-6L sot 26 Dual N-Channel MOSFET SPN6561S26RG 5V GATE TO SOURCE VOLTAGE MOSFET sot 26 N-Channel MOSFET Z/sot 26 Dual N-Channel MOSFET
    Text: SPN6561 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6561 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		SPN6561 SPN6561 SOT-23-6L sot 26 Dual N-Channel MOSFET SPN6561S26RG 5V GATE TO SOURCE VOLTAGE MOSFET sot 26 N-Channel MOSFET Z/sot 26 Dual N-Channel MOSFET PDF

    Mosfet

    Abstract: SSF2418E 2418E
    Text: SSF2418E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 18mohm(typ.) ID 6A SOT23-6 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and


    Original     		SSF2418E 18mohm OT23-6 2418E Mosfet SSF2418E 2418E PDF

    LTC3810H-5

    Abstract: gate drivers ic LTC3810-5 LTC3810E-5 LTC3810I-5 MBR1100 Si7450DP ZXMN10A07F LTC3810HUH-5 LTC3810
    Text: LTC3810-5 60V Current Mode Synchronous Switching Regulator Controller Description Features High Voltage Operation: Up to 60V n Large 1Ω Gate Drivers n No Current Sense Resistor Required n Dual N-Channel MOSFET Synchronous Drive n Extremely Fast Transient Response


    Original     		LTC3810-5 100ns TSSOP-16E LTC3703 100kHz 600kHz, 93VIN, SSOP-16, SSOP-28 LT3845A LTC3810H-5 gate drivers ic LTC3810-5 LTC3810E-5 LTC3810I-5 MBR1100 Si7450DP ZXMN10A07F LTC3810HUH-5 LTC3810 PDF

    SOT23-6L

    Abstract: SOT-23-6L CA SOT 25 marking 6l STN6561 ST2300 IDM-10 N -Channel power Sot 6
    Text: N6561 ST STN6561 Dual N Channel Enhancement Mode MOSFET 2.8A DESCRIPTION The STN6561 is the Dual N-Channel enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices


    Original     		STN6561 STN6561 OT-23-6L lSTN6561 ST2300 SOT23-6L SOT-23-6L CA SOT 25 marking 6l IDM-10 N -Channel power Sot 6 PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC3813 100V Current Mode Synchronous Step-Up Controller FEATURES n n n n n n n n n n n n n n n DESCRIPTION High Output Voltages: Up to 100V Large 1Ω Gate Drivers No Current Sense Resistor Required Dual N-Channel MOSFET Synchronous Drive ±0.5% 0.8V Voltage Reference


    Original     		LTC3813 100ns 28-Pin LTC3813 200kHz LTC3814-5 LTC3872 550kHz LTC3873 3813fb PDF

    IRF5852

    Abstract: IRF5800 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF5820
    Text: PD - 93999A IRF5852 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (W) ID 20 V 0.090@VGS = 4.5V 0.120@VGS = 2.5V 2.7A 2.2A Description These N-channel MOSFETs from International Rectifier


    Original     		3999A IRF5852 IRF5852 IRF5800 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF5820 PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC3810-5 60V Current Mode Synchronous Switching Regulator Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n High Voltage Operation: Up to 60V Large 1Ω Gate Drivers No Current Sense Resistor Required Dual N-Channel MOSFET Synchronous Drive Extremely Fast Transient Response


    Original     		LTC3810-5 100ns 3810-onous 100kHz 600kHz, 93VIN, SSOP-16, SSOP-28 LT3845A PDF

    150V Single N-Channel Power MOSFET TSOP-6

    Abstract: IRF5852 IRF5800 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV
    Text: PD - 93999 IRF5852 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS Ω RDS on) max (Ω) ID 20 V 0.090@VGS = 4.5V 0.120@VGS = 2.5V 2.7A 2.2A Description These N-channel MOSFETs from International Rectifier


    Original     		IRF5852 IRF5852 canIRF5805 IRF5806 150V Single N-Channel Power MOSFET TSOP-6 IRF5800 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV PDF

    6912A Datasheet

    Abstract: FDS6912A SOIC-16
    Text: June 1998 FDS6912A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		FDS6912A OT-23 6912A Datasheet FDS6912A SOIC-16 PDF

    6961A

    Abstract: FDS6961A SOIC-16
    Text: April 1999 FDS6961A Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		FDS6961A OT-23 6961A FDS6961A SOIC-16 PDF

    F011

    Abstract: F63TNR F852 FDS6961A L86Z SOIC-16
    Text: April 1999 FDS6961A Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		FDS6961A OT-23 F011 F63TNR F852 FDS6961A L86Z SOIC-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: October 1998 FDS6930A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		FDS6930A OT-23 SOIC-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: April 1999 FDS6961A Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		FDS6961A OT-23 PDF

    6930A

    Abstract: FDS6930A SOIC-16
    Text: October 1998 FDS6930A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		FDS6930A OT-23 SOIC-16 OT-223 6930A FDS6930A SOIC-16 PDF

    6930A

    Abstract: F011 F63TNR F852 FDS6930A L86Z SOIC-16
    Text: October 1998 FDS6930A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		FDS6930A OT-23 SOIC-16 OT-223 6930A F011 F63TNR F852 FDS6930A L86Z SOIC-16 PDF

    IRF5800

    Abstract: IRF5801 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV IRF5852PBF
    Text: PD - 95261 IRF5852PbF l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free HEXFET Power MOSFET VDSS RDS on max (W) ID 20 V 0.090@VGS = 4.5V 0.120@VGS = 2.5V 2.7A 2.2A Description These N-channel MOSFETs from International Rectifier


    Original     		IRF5852PbF IRF5800 IRF5801 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV IRF5852PBF PDF

    Si4920DY

    Abstract: SOIC-16
    Text: January 2001 Si4920DY Dual N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		Si4920DY OT-23 SOIC-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: January 2001 Si4920DY Dual N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		Si4920DY OT-23 PDF