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    DUAL MOSFET SO8 IC Search Results

    DUAL MOSFET SO8 IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    DUAL MOSFET SO8 IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK7K5R1-30E Dual N-channel 30 V, 5.1 mΩ standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK7K5R1-30E LFPAK56D

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK7K12-60E Dual N-channel 60 V, 9.3 mΩ standard level MOSFET 11 December 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK7K12-60E LFPAK56D

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK7K52-60E Dual N-channel 60 V, 45 mΩ standard level MOSFET 10 December 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK7K52-60E LFPAK56D

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK7K18-40E Dual N-channel 40 V, 19 mΩ standard level MOSFET 10 December 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK7K18-40E LFPAK56D

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK7K6R8-40E Dual N-channel 40 V, 6.8 mΩ standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK7K6R8-40E LFPAK56D

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK7K8R7-40E Dual N-channel 40 V, 8.5 mΩ standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK7K8R7-40E LFPAK56D

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK7K6R2-40E Dual N-channel 40 V, 5.8 mΩ standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK7K6R2-40E LFPAK56D

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK7K5R6-30E Dual N-channel 30 V, 5.6 mΩ standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK7K5R6-30E LFPAK56D

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK9K17-60E Dual N-channel 60 V, 17 mΩ logic level MOSFET 21 August 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power SO8 package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9K17-60E LFPAK56D

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK7K17-60E Dual N-channel 60 V, 14 mΩ standard level MOSFET 10 December 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK7K17-60E LFPAK56D

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK7K35-60E Dual N-channel 60 V, 30 mΩ standard level MOSFET 15 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK7K35-60E LFPAK56D

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK9K12-60E Dual N-channel 60 V, 11.5 mΩ logic level MOSFET 8 May 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		PDF BUK9K12-60E LFPAK56D

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK9K32-100E Dual N-channel 100 V, 33 mΩ logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		PDF BUK9K32-100E LFPAK56D

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK9K8R7-40E Dual N-channel 40 V, 9.4 mΩ logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		PDF BUK9K8R7-40E LFPAK56D

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK9K17-60E Dual N-channel 60 V, 17 mΩ logic level MOSFET 19 March 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		PDF BUK9K17-60E LFPAK56D

    96E840

    Abstract: No abstract text available
    Text: LF PA K 56D BUK9K6R8-40E Dual N-channel 40 V, 7.2 mΩ logic level MOSFET 5 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		PDF BUK9K6R8-40E LFPAK56D 96E840

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK9K25-40E Dual N-channel 40 V, 29 mΩ logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		PDF BUK9K25-40E LFPAK56D

    playstation 2 power supply

    Abstract: playstation 1 power supply SONY PLAYSTATION 3 sony playstation 3 power supply sony playstation 1 power supply sony playstation 2 power supply PLAYSTATION 3 power supply sony playstation 2 graphics synthesizer IBM GEKKO
    Text: Discretes and MultiMarket ICs DMI – BL Power 07/08/2002 DMI – BL Power Sony, Playstation, Nintendo, Gamecube, Microsoft and Xbox are trademarks and property of their respective owners. Semiconductors ASPD / page:2 DMI – BL Power Technical • CPU: Sony "Emotion Engine”, 128 bit, 300 MHz


    Original     		PDF OT223 BSH105 BSH103 PHP225 PHC21025 playstation 2 power supply playstation 1 power supply SONY PLAYSTATION 3 sony playstation 3 power supply sony playstation 1 power supply sony playstation 2 power supply PLAYSTATION 3 power supply sony playstation 2 graphics synthesizer IBM GEKKO

    comparator 12v

    Abstract: quad N-Channel MOSFET dip package LT1109 LT1172 LT1300 LT1301 LT1302 LT1308 LT1610 LTC1046
    Text: 3V Analog ICs InfoCard 14 PART NUMBER DESCRIPTION MIN VSUPPLY COMMENTS Step-Up DC/DC Converters from 1 or 2 Cells LT 1073/1173 LT1107/1108 LT1110/1111 Micropower DC/DC Converter Micropower DC/DC Converter Micropower DC/DC Converter LT1172 100kHz Switching Regulator, 1.25A Switch


    Original     		PDF LT1107/1108 LT1110/1111 LT1172 100kHz LT1373/2/7 250kHz/500kHz/1MHz LT1109 300mA LTC1540 LTC1542 comparator 12v quad N-Channel MOSFET dip package LT1109 LT1172 LT1300 LT1301 LT1302 LT1308 LT1610 LTC1046

    Si9405

    Abstract: dual mosfet so8 ic AN803 Si9400 Si9410 "leadframe material" DIP
    Text: AN803 Thermal Characteristics of Siliconix’s LITTLE FOOTr Family of Surface-Mount MOSFETs Jim Harnden Although a wide selection of digital and linear ICs have been available in surface-mount packages for some time, circuits that require power devices have, for the most part,


    Original     		PDF AN803 PHP-12, SO-16 17-Mar-94 Si9405 dual mosfet so8 ic AN803 Si9400 Si9410 "leadframe material" DIP

    70593

    Abstract: SI9420 Vishay SI9410 SI9400 AN803 Si9405 Si9410 dual mosfet so8 ic
    Text: AN803 Vishay Siliconix Thermal Characteristics of Vishay Siliconix’s LITTLE FOOTR Family of Surface-Mount MOSFETs Although a wide selection of digital and linear ICs have been available in surface-mount packages for some time, circuits that require power devices have, for the most part, required


    Original     		PDF AN803 PHP-12, SO-16 17-Mar-94 70593 SI9420 Vishay SI9410 SI9400 AN803 Si9405 Si9410 dual mosfet so8 ic

    Si9405

    Abstract: Si9410 AN803 Si9400 si9420
    Text: AN803 Thermal Characteristics of Siliconix’s LITTLE FOOTr Family of Surface-Mount MOSFETs Jim Harnden Although a wide selection of digital and linear ICs have been available in surface-mount packages for some time, circuits that require power devices have, for the most part,


    Original     		PDF AN803 PHP-12, SO-16 17-Mar-94 Si9405 Si9410 AN803 Si9400 si9420

    555 amplifier

    Abstract: igbt driver with 555 timer L4810CV TS555ID transistor l4892cv L4810CV Regulator TD310ID SA555D MULTIWATT15 MULTIWATT11
    Text: AUTOMOTIVE LINEAR ICS OPERATIONAL AMPLIFIERS BIPOLAR–SINGLE Type TDB7910 Description Medium Power 0,5A Amplifier Package DIP16 BIPOLAR–DUAL Type LM2904D LM2904DT LM2904N TSH22ID TSH22IN Description Low Power - Single Power Supply Amplifier Low Power - Single Power Supply Amplifier


    Original     		PDF TDB7910 DIP16 LM2904D LM2904DT LM2904N TSH22ID TSH22IN LM2902D LM2902DT LM2902N 555 amplifier igbt driver with 555 timer L4810CV TS555ID transistor l4892cv L4810CV Regulator TD310ID SA555D MULTIWATT15 MULTIWATT11

    igbt driver with 555 timer

    Abstract: TD310IN DUAL 5V REGULATOR WITH RESET Low Drop Low Power Voltage Regulator Quad 555 timers L387A TS555ID L4812CX MULTIWATT15 l4949ed
    Text: AUTOMOTIVE LINEAR ICS OPERATIONAL AMPLIFIERS BIPOLAR–SINGLE Type TDB7910 Description Medium Power 0,5A Amplifier Package DIP16 BIPOLAR–DUAL Type LM2904D LM2904DT LM2904N TSH22ID TSH22IN Description Low Power - Single Power Supply Amplifier Low Power - Single Power Supply Amplifier


    Original     		PDF TDB7910 DIP16 LM2904D LM2904DT LM2904N TSH22ID TSH22IN LM2902D LM2902DT LM2902N igbt driver with 555 timer TD310IN DUAL 5V REGULATOR WITH RESET Low Drop Low Power Voltage Regulator Quad 555 timers L387A TS555ID L4812CX MULTIWATT15 l4949ed