DUAL GATE MOSFET GRAPHS Search Results

95160

Abstract: MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs TMF3201J Dual-Gate Mosfet 9935 mosfet 95160 3
Contextual Info: Preliminary Specification TMF3201J Dual N-Channel Dual-Gate MOSFET □ Description SOT363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with

Contextual Info: TMF3201J Semiconductor Dual Gate MOSFET □ Description SOT-363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It consists of two equal dual gate MOSFET amplifiers with shared

MARKING CODE Zi sot363

Abstract: TMF3201J ZI Marking Code transistor MOSFET 9935
Contextual Info: TMF3201J Semiconductor Dual Gate MOSFET □ Description The TMF3201J is an N-channel enhancement type, dual- SOT-363 insulated gate, field-effect transistor that utilizes MOS Unit in mm construction. It consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads. The source

br 8764

Abstract: 13-AMPLIFIER BF1210
Contextual Info: BF1210 Dual N-channel dual gate MOSFET Rev. 01 — 25 October 2006 Product data sheet 1. Product profile 1.1 General description The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable

br 8764

Abstract: marking 822 sot363 6710 mosfet sp 9753 BF1214 sc 6700 N-CHANNEL dual gate ultra low noise vhf AMPLIFIER
Contextual Info: BF1214 Dual N-channel dual gate MOSFET Rev. 01 — 30 October 2007 Product data sheet 1. Product profile 1.1 General description The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable

Contextual Info: BF1216 Dual N-channel dual gate MOSFET Rev. 01 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization

bf1216

Abstract: Dual Gate MOSFET graphs dual gate mosfet in vhf amplifier SC-88 M5t transistor M5W
Contextual Info: BF1216 Dual N-channel dual gate MOSFET Rev. 01 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization

K 2611 MOSFET

Abstract: K 2611 MOSFET VOLTAGE RATING mosFET K 2611 9439 2n BF1206F Shortform Data and Cross References Mosfet UHF transistor handbook
Contextual Info: BF1206F Dual N-channel dual gate MOSFET Rev. 01 — 30 January 2006 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current

Contextual Info: BF1207 Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current

BF1207

Contextual Info: BF1207 Dual N-channel dual gate MOSFET Rev. 01 — 28 July 2005 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current

K 2611 MOSFET

Abstract: mosFET K 2611 K 2611 MOSFET VOLTAGE RATING 2N 8565
Contextual Info: SO T6 66 BF1206F Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current

hg1b

Abstract: marking 822 sot363
Contextual Info: BF1207 Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current

Contextual Info: SO T6 66 BF1206F Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current

8203 dual mosfet

Abstract: MCP14700-E/MF diagram of IC 8203 MCP14700 PIC32 PICC-18 dual mosfet 3X3 package DSAE003323
Contextual Info: MCP14700 Dual Input Synchronous MOSFET Driver Features General Description • Independent PWM Input Control for High-Side and Low-Side Gate Drive • Input Logic Level Threshold 3.0V TTL Compatible • Dual Output MOSFET Drive for Synchronous Applications

MCP87000

Abstract: motor control code c pwm with pic
Contextual Info: MCP14700 Dual Input Synchronous MOSFET Driver Features: General Description: • Ideally suited to drive low Figure-of-Merit FOM MOSFETs such as Microchip’s MCP87000 MOSFET family • Independent PWM Input Control for High-Side and Low-Side Gate Drive

KMB7D0DN40QA

Abstract: KMB7D0DN
Contextual Info: SEMICONDUCTOR KMB7D0DN40QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This planer stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.

KMB6D0DN30QA

Contextual Info: SEMICONDUCTOR KMB6D0DN30QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This planer stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.

Contextual Info: CSD75207W15 www.ti.com SLPS418 – JUNE 2013 Dual P-Channel NexFET Power MOSFET Check for Samples: CSD75207W15 FEATURES 1 • • • • • • • Dual P-Ch MOSFETs Common Source Configuration Small Footprint 1.5-mm x 1.5-mm Gate-Source Voltage Clamp

Contextual Info: CSD75207W15 www.ti.com SLPS418 – JUNE 2013 Dual P-Channel NexFET Power MOSFET Check for Samples: CSD75207W15 FEATURES 1 • • • • • • • Dual P-Ch MOSFETs Common Source Configuration Small Footprint 1.5-mm x 1.5-mm Gate-Source Voltage Clamp

p0109

Contextual Info: CSD75207W15 www.ti.com SLPS418 – JUNE 2013 Dual P-Channel NexFET Power MOSFET Check for Samples: CSD75207W15 FEATURES 1 • • • • • • • Dual P-Ch MOSFETs Common Source Configuration Small Footprint 1.5-mm x 1.5-mm Gate-Source Voltage Clamp

1/AN6069

Contextual Info: FAN3268 2 A Low-Voltage PMOS-NMOS Bridge Driver Features Description • • The FAN3268 dual 2 A gate driver is optimized to drive a high-side P-channel MOSFET and a low-side Nchannel MOSFET in motor control applications operating from a voltage rail up to 18 V. The driver has

LTC3810H-5

Abstract: gate drivers ic LTC3810-5 LTC3810E-5 LTC3810I-5 MBR1100 Si7450DP ZXMN10A07F LTC3810HUH-5 LTC3810
Contextual Info: LTC3810-5 60V Current Mode Synchronous Switching Regulator Controller Description Features High Voltage Operation: Up to 60V n Large 1Ω Gate Drivers n No Current Sense Resistor Required n Dual N-Channel MOSFET Synchronous Drive n Extremely Fast Transient Response

MOSFET 7121

Abstract: 9935 mosfet
Contextual Info: BF1217WR N-channel dual gate MOSFET Rev. 1 — 3 August 2010 Product data sheet 1. Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive

Contextual Info: BF1217WR N-channel dual gate MOSFET Rev. 2 — 20 June 2011 Product data sheet 1. Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive