Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DUAL GATE Search Results

    DUAL GATE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    DUAL GATE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF1102

    Abstract: BF1102R
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Jul 01 2000 Apr 11 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FETs FEATURES


    Original
    PDF MBD128 BF1102; BF1102R OT363 BF1102 R77/03/pp14 BF1102 BF1102R

    marking code L2

    Abstract: BF1203 MBL254 8203 dual mosfet mosfet k 9047 mosfet 7503 sot363 Marking DS NXP 9033 transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Dec 04 2001 Apr 25 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203


    Original
    PDF MBD128 BF1203 OT363 R77/03/pp20 marking code L2 BF1203 MBL254 8203 dual mosfet mosfet k 9047 mosfet 7503 sot363 Marking DS NXP 9033 transistor

    BF1203

    Abstract: FET MARKING CODE 8203 dual mosfet
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Dec 04 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203


    Original
    PDF MBD128 BF1203 OT363 613512/03/pp20 BF1203 FET MARKING CODE 8203 dual mosfet

    "MARKING CODE W1*"

    Abstract: BF1102 BF1102R n-channel dual 3010 marking code W2
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Jul 01 2000 Apr 11 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FETs FEATURES


    Original
    PDF MBD128 BF1102; BF1102R OT363 BF1102 603504/03/pp16 "MARKING CODE W1*" BF1102 BF1102R n-channel dual 3010 marking code W2

    BF1204

    Abstract: amplifier BF1204 mosfet handbook Dual Gate MOSFET graphs MCD960
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2001 Apr 25 2010 Sep 16 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204


    Original
    PDF MBD128 BF1204 OT363 R77/03/pp13 BF1204 amplifier BF1204 mosfet handbook Dual Gate MOSFET graphs MCD960

    DASF001419

    Abstract: MC100ES60T23EFR2 MC100ES60T23EF MC100ES60T23 75107
    Text: MC100ES60T23 3.3V DUAL DIFFERENTIAL LVPECL TO LVTTL TRANSLATOR 3.3 V Dual Differential LVPECL to LVTTL Translator The MC100ES60T23 is a dual differential LVPECL-to-LVTTL translator. The low voltage PECL levels, small package, and dual gate design is ideal for clock


    Original
    PDF MC100ES60T23 MC100ES60T23 INFORMATIO8200 199707558G DASF001419 MC100ES60T23EFR2 MC100ES60T23EF 75107

    9033 transistor

    Abstract: BF1203
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203


    Original
    PDF MBD128 BF1203 OT363 613512/02/pp20 9033 transistor BF1203

    MARKING 5F SOT363

    Abstract: BF1204 FET MARKING CODE km 1667
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Nov 13 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204


    Original
    PDF MBD128 BF1204 OT363 613512/02/pp12 MARKING 5F SOT363 BF1204 FET MARKING CODE km 1667

    TRANSISTOR BF1204

    Abstract: BF1204
    Text: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2001 Apr 25 2010 Sep 16 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204 PINNING - SOT363


    Original
    PDF MBD128 BF1204 OT363 R77/03/pp13 TRANSISTOR BF1204 BF1204

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Jul 01 2000 Apr 11 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FETs FEATURES BF1102; BF1102R


    Original
    PDF MBD128 BF1102; BF1102R OT363 BF1102 R77/03/pp14

    BF1203,115

    Abstract: BF1203
    Text: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Dec 04 2001 Apr 25 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203 PINNING - SOT363


    Original
    PDF MBD128 BF1203 OT363 R77/03/pp20 BF1203,115 BF1203

    95160

    Abstract: MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs TMF3201J Dual-Gate Mosfet 9935 mosfet 95160 3
    Text: Preliminary Specification TMF3201J Dual N-Channel Dual-Gate MOSFET □ Description SOT363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with


    Original
    PDF TMF3201J OT363 TMF3201J OT363 95160 MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs Dual-Gate Mosfet 9935 mosfet 95160 3

    AN 7591 POWER AMPLIFIER

    Abstract: an 7591 BF1206 an 7591 power amp dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 NXP Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single


    Original
    PDF MBD128 BF1206 OT363 R77/01/pp22 AN 7591 POWER AMPLIFIER an 7591 BF1206 an 7591 power amp dual-gate

    transistor 341 20P

    Abstract: marking sot363 20p UHF Dual Gate uhf vhf amplifier dual-gate dual gate fet FET MARKING CODE FET marking codes FET Spec sheet marking 865 amplifier
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 Philips Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single


    Original
    PDF MBD128 BF1206 OT363 SCA75 20p/01/pp21 transistor 341 20P marking sot363 20p UHF Dual Gate uhf vhf amplifier dual-gate dual gate fet FET MARKING CODE FET marking codes FET Spec sheet marking 865 amplifier

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102R Dual N-channel dual gate MOS-FET Preliminary specification 2000 Jan 06 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102R PINNING - SOT363 FEATURES • Two low noise gain controlled amplifiers in a single


    Original
    PDF MBD128 BF1102R 115102/00/02/pp12

    MOSFET 4466

    Abstract: 4466 8 pin mosfet pin voltage dual sot363 BF1102 mosfet 1412 dual gate mosfet MGS365 marking code AL mosfet handbook
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1102 Dual N-channel dual gate MOS-FET Preliminary specification 1999 Jul 08 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES • Two low noise gain controlled amplifiers in a single


    Original
    PDF MBD128 BF1102 OT363 125004/00/01/pp12 MOSFET 4466 4466 8 pin mosfet pin voltage dual sot363 BF1102 mosfet 1412 dual gate mosfet MGS365 marking code AL mosfet handbook

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 NXP Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single


    Original
    PDF MBD128 BF1206 OT363 R77/01/pp22

    00941

    Abstract: BF1205
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1205 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single


    Original
    PDF MBD128 BF1205 OT363 SCA75 R77/01/pp24 00941 BF1205

    BF1203

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Preliminary specification 2000 May 29 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET FEATURES BF1203 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single


    Original
    PDF MBD128 BF1203 125004/00/01/pp8

    00941

    Abstract: dual gate fet BF1205 mosfet handbook
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1205 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single


    Original
    PDF MBD128 BF1205 OT363 R77/01/pp25 00941 dual gate fet BF1205 mosfet handbook

    philips power mosfet

    Abstract: km 1667 BF1204
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification 2000 Nov 13 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single


    Original
    PDF MBD128 BF1204 613512/01/pp12 philips power mosfet km 1667

    DRV_B

    Abstract: 100C
    Text: SENSITRON SEMICONDUCTOR SPM4007010 TECHNICAL DATA Datasheet 5030, Preliminary Dual MOSFET BRIDGE, With Gate Driver DESCRIPTION: A 100 VOLT, 7.5 AMP, DUAL MOSFET BRIDGE A high density Dual H-Bridge capabable of driving 7.5A peak at 100V. This small footprint dual bridge contains low Rdson power FETs , FET drivers and precision


    Original
    PDF SPM4007010 DRV_B 100C

    DRV_B

    Abstract: SPM4012006 100C
    Text: SENSITRON SEMICONDUCTOR SPM4012006 TECHNICAL DATA Datasheet 5024, Preliminary Dual MOSFET BRIDGE, With Gate Driver DESCRIPTION: A 60 VOLT, 12 AMP, DUAL MOSFET BRIDGE A high density Dual H-Bridge capabable of driving 12A peak at 60V. This small footprint dual bridge contains low Rdson power FETs , FET drivers and precision


    Original
    PDF SPM4012006 DRV_B SPM4012006 100C

    MOSFET 4466

    Abstract: 4466 8 pin mosfet pin voltage 4466 mosfet
    Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT BF1102 Dual N-channel dual gate MOS-FET Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES


    OCR Scan
    PDF BF1102 OT363 BF1102 MOSFET 4466 4466 8 pin mosfet pin voltage 4466 mosfet