DSS 2 41 Search Results

Contextual Info: DSS 2x160-0035/45A IFAVM = 2x160 A VRRM = 35 - 45 V VF = 0.73 V Power Schottky Rectifier Non isolated Preliminary Data VRSM VRRM V V 35 45 35 45 Symbol A2 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-0035A DSS 2x160-0045A A1 Test Conditions Anode 1 Maximum Ratings

BV45

Contextual Info: DSS 2x160-0045A IFAVM = 2x160 A VRRM = 45 V VF = 0.73 V Power Schottky Rectifier Non isolated Preliminary Data VRSM VRRM V V 45 45 A2 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-0045A A1 Anode 1 Common cathode Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM

2SK2803

Abstract: FM20
Contextual Info: 2SK2803 Absolute Maximum Ratings External dimensions 1 . FM20 Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 450 V V(BR) DSS VGSS ±30 V ID ±3 A ±12 ID (pulse) *1 PD EAS *2 min 450 Ratings typ I GSS I DSS (Ta = 25ºC) max Unit

Contextual Info: DSS 2x160-0045A IFAVM = 2x160 A VRRM = 45 V VF = 0.73 V Power Schottky Rectifier Non isolated Preliminary Data VRSM VRRM V V 45 45 miniBLOC, SOT-227 B A2 Type Anode 2 DSS 2x160-0045A A1 Anode 1 Common cathode Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM

DIODE F10 033 106

Abstract: DSS 2X160-01A V100A2 DIODE F10
Contextual Info: DSS 2x160-01A IFAVM = 2x160 A VRRM = 100 V VF = 0.80 V Power Schottky Rectifier Non isolated Preliminary Data VRSM VRRM V V 100 100 A2 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-01A A1 Anode 1 Common cathode Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM

2SK2710

Contextual Info: 2SK2710 External dimensions 2 . FM100 Absolute Maximum Ratings Electrical Characteristics Ta = 25ºC Symbol Ratings Unit Symbol VDSS 600 V V(BR) DSS I D = 100µA, VGS = 0V nA VGS = ±30V I DSS 100 µA VDS = 600V, VGS = 0V A VTH 2.0 3.0 ±48 A Re (yfs)

Contextual Info: DSS 2x160-01A IFAVM = 2x160 A VRRM = 100 V VF = 0.81 V Power Schottky Rectifier Non isolated VRSM VRRM V V 100 100 A2 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-01A A1 Anode 1 Common cathode Symbol Conditions IFRMS IFAVM IFAVM TC = 95°C; rectangular, d = 0.5

Contextual Info: DSS 2x160-01A IFAVM = 2x160 A VRRM = 100 V VF = 0.80 V Power Schottky Rectifier Non isolated Preliminary Data A2 VRSM VRRM V V 100 100 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-01A A1 Symbol Test Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 95°C; rectangular, d = 0.5

2x160-01A

Abstract: 2x160 2X16001A dss2x160-01a DSS2*160 DSS 2X160-01A DSS 2*160-01A
Contextual Info: DSS 2x160-01A IFAVM = 2x160 A VRRM = 100 V VF = 0.81 V Power Schottky Rectifier Non isolated VRSM VRRM V V 100 100 A2 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-01A A1 Anode 1 Common cathode Symbol Conditions IFRMS IFAVM IFAVM TC = 95°C; rectangular, d = 0.5

2X16001A

Contextual Info: DSS 2x160-01A IFAVM = 2x160 A VRRM = 100 V VF = 0.80 V Power Schottky Rectifier Non isolated VRSM VRRM V V 100 100 A2 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-01A A1 Anode 1 Common cathode Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 95°C; rectangular, d = 0.5

Contextual Info: DSS 2x160-0045A IFAVM = 2x160 A VRRM = 45 V VF = 0.73 V Power Schottky Rectifier Non isolated VRSM VRRM V V 45 45 A2 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-0045A A1 Anode 1 Common cathode Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 100°C; rectangular, d = 0.5

DSS 2X160-01A

Contextual Info: DSS 2x160-01 A Power Schottky Rectifier •fa v m V rrM Non isolated VF Preliminary Data 2x160 A 100 V 0.80 V 9 f£ . v’ RSM VRRM V V 100 100 Symbol Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-01A Test Conditions Anode 1 Maximum Ratings Common cathode ^FRMS

2x160

Abstract: 2x160-0045A
Contextual Info: DSS 2x160-0045A IFAVM = 2x160 A VRRM = 45 V VF = 0.72 V Power Schottky Rectifier Non isolated VRSM VRRM V V 45 45 A2 Type SOT-227 B, miniBLOC Anode 2 DSS 2x160-0045A A1 Common cathode Symbol Conditions IFRMS IFAVM IFAVM TC = 100°C; rectangular, d = 0.5 TC = 100°C; rectangular, d = 0.5; per device

Contextual Info: □IXYS Power Schottky Rectifier 2x160 A 3 5 -45 V 0.73 V I fa v m V Non isolated rrM VF Preliminary Data v RSM v RRM V V 35 45 35 45 Type miniBLOC, SOT-227 B o A DSS 2X160-0035A DSS 2x160-0045A A1 Anode 2 Ì N/ Symbol Test Conditions Anode 1 Maximum Ratings

D449

Contextual Info: Power Schottky Rectifier •FAVM ^R R M Non isolated vP 2x160 A 35 - 45 V 0.73 V Preliminary Data v ASM v*R R M V V 35 45 35 45 Symbol A2 Type £ miniBLOC, SOT-227 B Anode 2 DSS 2x160-0035A DSS 2x160-0045 A ■ f A1 Test Conditions Anode 1 Maximum Ratings

2x81-0045

Abstract: 70008A DSS2X160-01A 2x160 DSS2*160 6Y045AS 80-0045B 60-0045B 2x121 DSS 2x160-01A
Contextual Info: Power Schottky Rectifier Diodes Schottky Diodes Contents 1 TO-220 AC 2 3 A 1 15 20 6 6 15 15 2x 20 2x 35 1 25 25 2 6 25 25 2x 25 2x 25 TO-263 AB TO-252 AA TO-247 AD 6 V Circuit Diagram Page D4- 0.33 DSS 20 B 4 0.32 DSSK 40 0.33 DSSK 70 B B 6 8 0.44 DSS 25

Contextual Info: MITSUBISHI Neh POWER MOSFET FS50KM-2 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dim ensions in mm 10 ± 0.3 2 .8 1 0 .2 1 0 V D R IV E V dss . 1 0 0 V rDS ON ( 5 m i2

Contextual Info: FP31QF 2 – Watt HFET Product Information Applications • RFID: HF, UHF, microwave • Readers Saturated Drain Current, I dss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth Test Frequency Small Signal Gain Maximum Stable Gain

Contextual Info: FP31QF 2 – Watt HFET Product Information • RFID: HF, UHF, microwave • Readers • • • Industrial Portable Handheld Units Min Typ Saturated Drain Current, I dss Transconductance, Gm Pinch Off Voltage, Vp 1 Thermal Resistance Junction Temperature (2)

DIODE D3S 5D

Contextual Info: PD -9.1674 International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A

DIODE D3S 5D

Abstract: diode D3s IRFZ3
Contextual Info: PD - 9.1674A International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A

of SD-50 Diode

Contextual Info: SFP9624 Advanced Power MOSFET FEATURES B V dss = -2 5 0 V 2 . 4 Î2 • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = ■ ■ ■ Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10

FZ44N

Abstract: IRFIZ44N equivalent fz44
Contextual Info: PD - 9.1403A International IÖR Rectifier IRFIZ44N HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 55 V FÍDS on = 0 .0 2 4 Í 2 lD = 3 1 A

Contextual Info: PD - 9.1692A International Rectifier IÖR IRL3302S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 2 0 V Rü S o n = 0 .0 2 0 S2 lD = 39A