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    DSEI 2X60 Price and Stock

    IXYS Corporation DSEI2X60-04C

    DIODE MODULE GP 400V 60A SOT227B
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    DigiKey DSEI2X60-04C Tube 100
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    • 100 $13.4838
    • 1000 $13.4838
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    Mouser Electronics DSEI2X60-04C
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    • 100 $14.56
    • 1000 $14.56
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    New Advantage Corporation DSEI2X60-04C 191 1
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    • 100 $34.4
    • 1000 $32.11
    • 10000 $32.11
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    Littelfuse Inc DSEI2X60-04C

    Pwr Diode Disc-Fred Sot-227B (Minibloc)/ Tube |Littelfuse DSEI2X60-04C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark DSEI2X60-04C Bulk 100
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    • 100 $15.75
    • 1000 $14.13
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    RS DSEI2X60-04C Bulk 8 Weeks 10
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    • 10 $28.21
    • 100 $28.21
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    DSEI 2X60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXYS DSEI 2x61-06C

    Abstract: 2x61-06c ixys dsei 2x61 dsei 2x60
    Text: Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 440 640 400 600 DSEI 2x61 IFAVM = 2x60 A VRRM = 400/600 V = 35 ns trr miniBLOC, SOT-227 B Type DSEI 2x61-04C DSEI 2x61-06C Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM


    Original     		OT-227 2x61-04C 2x61-06C IXYS DSEI 2x61-06C 2x61-06c ixys dsei 2x61 dsei 2x60 PDF

    DSE112-06A

    Abstract: dse112 30-1OA 805A 140-12DA DSEI 30-06A DSE112-06 2X30-06C FOR DSEI 2X61-04C dsei 2x60
    Text: Fast Recovery Epitaxial Diodes FRED and FRED Modules lFAV = 8 - 305 A Typa VJM DSEI8-06A • DSEI 8-05A • DSEI 8-04A ► DSEI 12-12A DSEI 12-10A lm @ -dl/dt F ^ 'F Van ‘ r, 45'C max. typ. typ. 10 ms Tvjm = 150-C TVJ=250C TVJ = 100CC A A/^a A ns •C


    OCR Scan     		DSEI8-06A 150-C O-220 2-12A 2-10A 2-08A DSE112-06A 2-05A 2-04A 30-1OA DSE112-06A dse112 30-1OA 805A 140-12DA DSEI 30-06A DSE112-06 2X30-06C FOR DSEI 2X61-04C dsei 2x60 PDF

    ixys dsei 2x61-06C

    Abstract: No abstract text available
    Text: Mt a b PZ b D D G i a S 3 7 1 T • I X Y D I X Y S DSEI 2x61 Fast Recovery Epitaxial Diodes lFAV = 2x60 A VRRM = 400-600 V tn < 35 ns miniBLOC, SOT-227 B V V 440 540 640 400 500 600 2 • DSEI 2x61-04C DSEI 2x61-05C DSEI 2x61-06C 1 1 o-J H Ho 3 -« 4


    OCR Scan     		OT-227 2x61-04C 2x61-05C 2x61-06C D-68619 ixys dsei 2x61-06C PDF

    FR 0169

    Abstract: 2X61-06C
    Text: Fast Recovery Epitaxial Diodes FRED DSEI 2x61 lFAVM = 2x60 A vRRM= 400/600 V trr vV RSM V rrm \_0 V 440 640 400 600 DSEI 2x61-04C DSEI 2x61-06C Test Conditions Maximum Ratings (per diode) V rm "*"vj = T/ jm T . = 70°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by T vjm


    OCR Scan     		OT-227 2x61-04C 2x61-06C 1490-dip/dt. 1997IXYS FR 0169 2X61-06C PDF

    ixys dsei 2x61

    Abstract: DSEI 2X61-10B ixys dsei 2*61-10b
    Text: Fast Recovery Epitaxial Diodes FRED VRSM V 1000 VRRM DSEI 2x61 IFAVM = 2x60 A VRRM = 1000 V = 35 ns trr miniBLOC, SOT-227 B Type V 1000 DSEI 2x61-10B Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5


    Original     		OT-227 2x61-10B ixys dsei 2x61 DSEI 2X61-10B ixys dsei 2*61-10b PDF

    DSEI2*61-12

    Abstract: dsei 2x60
    Text: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAVM = 2x60 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 61-10P D5 Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM


    Original     		61-10P DSEI2x61-12P DSEI2*61-12 dsei 2x60 PDF

    Untitled

    Abstract: No abstract text available
    Text: Fast Recovery Epitaxial Diodes FRED DSEI 2x61 IFAVM = 2x60 A vRRM= 1000 v trr — v RSM Type V rrm V V 1000 1000 Symbol 1 > miniBLOC, SOT-227 B 1 DSEI 2x61-10B Test Conditions Maximum Ratings (per diode) 'frm "^vj “ Tvjm Tc= 50°C; rectangular, d = 0.5


    OCR Scan     		OT-227 2x61-10B 1997IXYS 0003flbfl PDF

    dsei 2x60

    Abstract: IXYS DSEI 2X61 IXYS DSEI 2 ixys dsei IXYS DSEI 2X
    Text: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAVM = 2x60 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 61-10P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM


    Original     		61-10P dsei 2x60 IXYS DSEI 2X61 IXYS DSEI 2 ixys dsei IXYS DSEI 2X PDF

    ixys dsei 2x61

    Abstract: dsei 2x60 IXYS DSEI 2 IXYS DSEI 2X 2x61
    Text: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 IFAVM = 2x60 A VRRM = 600 V trr = 35 ns Type DSEI 2x 61-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM


    Original     		61-06P ixys dsei 2x61 dsei 2x60 IXYS DSEI 2 IXYS DSEI 2X 2x61 PDF

    IXYS DSEI 2X121-02a

    Abstract: ixys dsei 2x30-12b DSEI IXYS 2x31-12B ixys dsei 1x31-06c IXYS DSEI 2 DSEI 120-06A 1x31-06c dsei 2x60 IXYS DSEI 2X61-12B DSEI IXYS 2x31
    Text: IXYS _ FRED Contents K Package style/Bauform Type Page ns 1b TO-252AA 1 TO-220 AC 1a TO-263AA 35 35 35 k \ 1a 2 TO-247 AD 2a TO-247 AD 2b ISOPLUS 247 3 SOT-227 B, miniBLOC new DSEI6-06AS DSEI 8-06A DSEI 8-06AS D1-2 D1-4 D1-4 35 50 50 40


    OCR Scan     		O-252AA DSEI6-06AS 8-06AS 2-06A 2-10A 2-12A 0-12A 19-06AS 36-06AS 0-06A IXYS DSEI 2X121-02a ixys dsei 2x30-12b DSEI IXYS 2x31-12B ixys dsei 1x31-06c IXYS DSEI 2 DSEI 120-06A 1x31-06c dsei 2x60 IXYS DSEI 2X61-12B DSEI IXYS 2x31 PDF

    ixys dsei 2*61-10b

    Abstract: ATS1000 ixys dsei 12 IXYS DSEI 2X61-06
    Text: 4bfl b22b 0001025 5T2 *IXY □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 IFAV V t miniBLOC, SOT-227 B v RSM V 640 800 1000 Sym bol V RRM 600 800 1000 2 OSEI 2x61-06B OSEI 2x61-08B DSEI 2x61-10B Ho Maximum Ratings per diode j. t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine


    OCR Scan     		4bflb22b OT-227 2x61-06 2x61-08B 2x61-10B 150nsient D-68619 ixys dsei 2*61-10b ATS1000 ixys dsei 12 IXYS DSEI 2X61-06 PDF

    Untitled

    Abstract: No abstract text available
    Text: •_4bßb22b 0 0 0 1 Ö2 S 5^2 M I X Y □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 lFAV = 2x60 A V rrm trr = 600-1000 V < 50 ns miniBLOC, SOT-227 B V v*» V 640 800 1000 600 800 1000 Type p ° ! 3 •- — Symbol Test Conditions 'frms *FAV* 1 Ifmi


    OCR Scan     		OT-227 2x61-06B 2x61-08B 2x61-10B D-68619 PDF

    Dsei 2x101-12A

    Abstract: 2X121-02A DSEI 2*101-12A Dsei 2x101-06P 2X161-02P
    Text: 2x60 ' 2x 160 V Typ e T Vju = 150-C ► N ew RAM V A _ _ _ 1 'fav @ T1c d=0.5 A ^FRMS *FSM 10 ms °C "^VJM A 4 5 °C A vF @ IF m ax. tfr typ . TVJ * 150°C V A T1VJ=25°C ns lR H @ -d i/d t TVJ = 100°C


    OCR Scan     		150-C 2x61-02P 2x61-1 2x61-12P 2x61-02A 2x61-06C 2x61-10B 2x61-12B 2x121-02P 2x121-02A Dsei 2x101-12A 2X121-02A DSEI 2*101-12A Dsei 2x101-06P 2X161-02P PDF

    DSE112-12

    Abstract: DSE112-12A dse112 2x30-12b DSE119-06AS 500-06DA 250-12DA 300-06DA
    Text: Fast Recovery Epitaxial Diodes FRED Ifav = 8 - 5 8 2 A Type *FSM TVjm = 150°C VJM A ► New 10 ms 45°C A Package style F max. "^VJM = typ. typ. T vj=25°C TVJ A ns 150°C A 100-C A/jis K/W 64 2.5 50 100 2.0 62 100 1.6 78 35 100 1.6 62 40 100 1.6 78 200


    OCR Scan     		100-C 2-06A 2-10A DSE112-12 DSE119-06 0-12A 5-10A 0-06A 30-1OA DSE112-12A dse112 2x30-12b DSE119-06AS 500-06DA 250-12DA 300-06DA PDF

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


    OCR Scan     		CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B PDF

    DSE112-12A

    Abstract: DSE112-10A dse112 DSEI2X101-12A DSE1120-12A 2X31-12B DSDI60-18A DSE112-12 DSEI 120-06A DSDI60-16A
    Text: Fast Recovery Epitaxial Diodes FRED lFAV= 8 - 582 A V RRM Type 1FAV @ T c TvJM= 150°C ^FRMS ^V JM ^FSM vF 10 ms 45°C A max. "^VJM @ lF lRM @ -di/dt K typ. typ. TVJ=25°C TVJ = 100°C ns A A/(is = 150°C ► New □SEI 8-06A V A °C A 600 8 115 16 100 1.3


    OCR Scan     		DSEI8-06AS DSEI12-06A DSE112-10A DSE112-12A 19-06AS 0-12A 0-06A 30-1OA 35-06AS dse112 DSEI2X101-12A DSE1120-12A 2X31-12B DSDI60-18A DSE112-12 DSEI 120-06A DSDI60-16A PDF

    Untitled

    Abstract: No abstract text available
    Text: Fast Recovery Epitaxial Diodes FRED U , = 8 - 582 A V Type RRM 1 @ T1c 'FAV U rms vF *FSM 10 m s @ t rr 'f m a x. 4 5 °C Irm @ -d i/d t typ. T vjm = 1 5 0 °C V A V A °C ^"v JM A ► D S E I 6 -0 6 A S 600 6 125 16 65 1.3 8 35 2.5 D S E I 8 -0 6 A D S E I 8 -0 6 A S


    OCR Scan     		PDF

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50 PDF

    IXYS DSEI 2X121

    Abstract: IXYS DSEI 2X121-02a 2x121-02a IXYS DSEI 2X61 DO-205 2X61-10B 110-12F dsei 2x60 110-16F 6206 sot 89
    Text: DS 75 DSA 75 Rectifier Diodes Avalanche Diodes VRSM V BR min ① VRRM DSI 75 DSAI 75 VRRM = 800 - 1800 V IF(RMS) = 160 A I F(AV)M = 110 A DO-203 AB Anode Cathode on stud on stud C A V V V 900 1300 - 800 1200 DS 75-08B DS 75-12B DSI 75-08B DSI 75-12B 1300 1700


    Original     		DO-203 75-08B 75-12B 75-16B 75-18B IXYS DSEI 2X121 IXYS DSEI 2X121-02a 2x121-02a IXYS DSEI 2X61 DO-205 2X61-10B 110-12F dsei 2x60 110-16F 6206 sot 89 PDF

    BERULUB FR 16 B

    Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
    Text: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power


    Original     		IXBH40N160, BERULUB FR 16 B circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF