CHA2090-99F/00
Abstract: bp 1361 CHA2090 MS11 MS12 MS21 MS22 PS11 PS12 PS22
Text: CHA2090 RoHS COMPLIANT 17-24GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via
|
Original
|
CHA2090
17-24GHz
CHA2090
17-24GHz
DSCHA20909347
CHA2090-99F/00
bp 1361
MS11
MS12
MS21
MS22
PS11
PS12
PS22
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CHA2090 RoHS COMPLIANT 17-24GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard 0.25µm gate length pHEMT process, via
|
Original
|
CHA2090
17-24GHz
CHA2090
17-24GHz
DSCHA20909347-13
|
PDF
|
CHA2090-99F/00
Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22 CHA2090
Text: CHA2090 17-24GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges
|
Original
|
CHA2090
17-24GHz
CHA2090
17-24GHz
DSCHA20909347
CHA2090-99F/00
MS11
MS12
MS21
MS22
PS11
PS12
PS22
|
PDF
|
bp 1361
Abstract: PS11 PS12 PS22 CHA2090 MS11 MS12 MS21 MS22
Text: CHA2090 RoHS COMPLIANT 17-24GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard 0.25µm gate length pHEMT process, via
|
Original
|
CHA2090
17-24GHz
CHA2090
17-24GHz
DSCHA20909347-13
bp 1361
PS11
PS12
PS22
MS11
MS12
MS21
MS22
|
PDF
|