Untitled
Abstract: No abstract text available
Text: T-1 3mm INFRARED EMITTING DIODE Part Number: WP710A10SF4C Features Description z Mechanically and spectrally matched to the phototransistor. SF4 Made with Gallium Aluminum Arsenide Infrared Emit- z RoHS compliant. ting diodes. Package Dimensions Notes: 1. All dimensions are in millimeters (inches).
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WP710A10SF4C
DSAL0542
AUG/09/2010
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Untitled
Abstract: No abstract text available
Text: T-1 3mm INFRARED EMITTING DIODE Part Number: WP710A10SF4C Features Description z Mechanically and spectrally matched to the phototransistor. SF4 Made with Gallium Aluminum Arsenide Infrared Emit- z RoHS compliant. ting diodes. Package Dimensions Notes: 1. All dimensions are in millimeters (inches).
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Original
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PDF
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WP710A10SF4C
DSAL0542
MAR/20/2013
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Untitled
Abstract: No abstract text available
Text: T-1 3mm INFRARED EMITTING DIODE Part Number: WP710A10SF4C Features Description z Mechanically and spectrally matched to the phototransistor. SF4 Made with Gallium Aluminum Arsenide Infrared Emit- z RoHS compliant. ting diodes. Package Dimensions Notes: 1. All dimensions are in millimeters (inches).
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Original
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PDF
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WP710A10SF4C
DSAL0542
APR/09/2011
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WP710A10
Abstract: No abstract text available
Text: T-1 3mm INFRARED EMITTING DIODE Part Number: WP710A10SF4C Features Description z Mechanically and spectrally matched to the phototransistor. SF4 Made with Gallium Aluminum Arsenide Infrared Emit- z RoHS compliant. ting diodes. Package Dimensions Notes: 1. All dimensions are in millimeters (inches).
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Original
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PDF
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WP710A10SF4C
DSAL0542
APR/09/2011
WP710A10
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