APT2012F3C
Abstract: No abstract text available
Text: 2.0x1.25 mm INFRARED EMITTING DIODE Part Number: APT2012F3C Features Description z 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting diodes. z MECHANICALLY AND SPECTRALLY MATCHED TO THE PHOTOTRANSISTOR. z WATER CLEAR LENS.
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APT2012F3C
2000PCS
DSAA9557
MAY/08/2007
APT2012F3C
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APT2012F3C
Abstract: 20x12
Text: 2.0x1.25 mm INFRARED EMITTING DIODE Part Number: APT2012F3C Features Description z 2.0mmx1.25mm SMT LED,0.75mm Thickness. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Mechanically and spectrally matched to the phototransistor. z Water clear lens.
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PDF
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APT2012F3C
2000pcs
DSAA9557
APR/13/2009
APT2012F3C
20x12
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Untitled
Abstract: No abstract text available
Text: 2.0x1.25 mm INFRARED EMITTING DIODE Part Number: APT2012F3C Features Description z 2.0mmx1.25mm SMT LED,0.75mm thickness. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Mechanically and spectrally matched to the phototransistor. z Package: 2000pcs / reel.
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Original
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PDF
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APT2012F3C
2000pcs
DSAA9557
DEC/28/2011
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APT2012F3C
Abstract: No abstract text available
Text: 2.0x1.25 mm INFRARED EMITTING DIODE Part Number: APT2012F3C Features Description z 2.0mmx1.25mm SMT LED,0.75mm thickness. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Mechanically and spectrally matched to the phototransistor. z Package: 2000pcs / reel.
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Original
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PDF
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APT2012F3C
2000pcs
DSAA9557
AAPR/09/2011
APR/09/2011
APT2012F3C
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