DSA 403 Search Results

diode avalanche DSA VRRM 2300

Abstract: diode avalanche DSA DSA 135 dsa 1508-11 DSA VRRM 2300 40561 dsa 1508 abb diode YSD 40629 YSD 45-01
Contextual Info: A B B SEMICONDUCTORS AG DSA Avalanche Diodes Type Ordering number Bestellnummer Num. de commande 33E D □ QOlbfi Bfl 000002=1 0 B A B B DSA Avalanche-Dioden I f.ÎM V rrm I frms V Tc=50°C Tc=100<>C 8,3 ms 10 ms kA V A A kA I favm DSA l 403-38.50 GG.L1G 3800.5000 1040

d 151811

Abstract: 40669 DSD 1028-25 A diode avalanche DSA dsa 1508 diode avalanche DSA VRRM 2300 abb diode YSD CH-4UH dsa 1208 DSA 135
Contextual Info: S E MI COND UC TORS AG rrm Ifavm O o &> V f Type O rdering num ber Bestellnum m er Num. de com m ande □ ODl hfi Bfi OOOQOaq □ B A B B DSA Avalanche-Dioden 1 DSA Avalanche Diodes 3flE D o A B B Tc A V DSA l 403-38.50 GG, L1G 3800.5000 1040 Tf 5M V = 100°C 8,3 m s 10 m s

DSA-36W-12

Abstract: DSA-60W-20 e135856 DSA-0101F-05 FSP150-AAB FSP150-ACB DSA-12W-05 DSA-0151-12 dsa36w12 DSA-0151D-05
Contextual Info: UVE SP-211870 DEE VAN ENTERPRISE CO., LTD. DSA-30PF-12 CUSTOMER: Revision: A_ Date: 2005.10.24 F021 PART NUMBER:_ APPROVAL SHEET FOR SWITCHING ADAPTER MODEL NO. DSA-30PF-12 order no: s p -2 1 1 870 CUSTOMER APPROVED SIGNATURE

U860 diode

Abstract: diode U860 diode avalanche DSA U860 tc 40138 DIODE DSA 18 diode avalanche DSA VRRM 2300 DSA VRRM 2300 G DSA 908-44 A G diode avalanche DSA 603
Contextual Info: A S E A b Ro u n /abb AB seuicon D I 00MÛ3DÛ □OGOlhl 7 * T -o \- Netzdioden Vrrm 1 Diode I 1 DS Ki DSA 1 1 T yp /type 1 I I Rectifier diodes S21 - I I 1 I FAV1 400-11 KC, NC 400-14 KC, NC 400-17 KC, NC 400-20 KC, NC 400-23 KC.NC ft If s m If a v m A °C A

dsa diodes DSA 401

Abstract: G DSA 908-44 A G dsa 605-23 A DSA 908-44 A G 0/dsa diodes DSA 401 dsa 405-44
Contextual Info: A S E A BROUN/ABB Netzdioden Dkxfe DS SA fo D f Typ/type aS"- SEMICON li — — — Diodes de redressement Rectifier diodes V rrm Ifrm s Ifavi Ifavm Tc = V 50° C 100°C D SA J[ £ DS Avalanche Typ - V A °C A A r i □ □ 4 fl3Ufi ft Ifsm OVJM) (10 ms)

mpsa25c

Abstract: MPS-A12 MPS6576C
Contextual Info: AL L E GRO MI C ROS Y S T E MS I NC T3 D • 0504330 DDQBSbb - 8514019 SPRAGUE. 7 ■ ALGR , ^ 93D 03566 3 ' X ' f l i l ~\£> SEMICONDS / ICS BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type

8ta16

Abstract: 6LF6 tube 6lw6 6lf6 tube 6LW6 dct 814 1nu1 N2606-02 6cw6 6bc6
Contextual Info: Cross Reference Chart Brennan No. N0304-C-01 N0304-C-02 N0304-C-04 N0304-C-05 N0304-C-06 N0304-C-08 N0304-C-10 N0304-C-12 N0304-C-14 N0304-C-16 N0304-C-20 N0304-C-24 N0304-C-32 N0318-01 N0318-02 N0318-04 N0318-05 N0318-06 N0318-08 N0318-10 N0318-12 N0318-14

6953-B

Abstract: 7812A AH413 700201 CV2154 AH370 ML40150 DH 408 diode dmf 612 14094 b
Contextual Info: ML 4000 SERIES EQUIVALENT PARTS LIST The majority o f C.V. register and commercial microwave diodes can be provided depending on demand. M/A-COM Ltd also provides a second source of direct equivalents to other manufacturers devices, the majority o f which are approved for space use. A comprehensive equivalents list is provided below.

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

bbc ds diodes DS 1,8

Abstract: BBC DSA 0,9 14 A BBC DSA 0.9 bbc ds diodes bbc ds diodes DS 1,8 04 A diode bbc ds 1.8 bbc ds 17 bbc dsd 17 BBC DSA 42 bbc ds diodes DS 22
Contextual Info: BBC Technical Data Silicon-Semiconductor ' Components BR0” Printed order nr. Rectifier-Diodes D G H s 30392 E Diodes are e le ctric devices which con du ct current in one directio n i.e. offer a low resistance, w hile blocking i.e. offering a high resistance, in the reverse direction.

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

Contextual Info: ZILOG INC 30E D m ^04043 0015053 3 • Z 8030 Military T 7 5-3 7 -£7 Z8000 Z-SCC Serial Communications Controller i7 ' i A ¿illO y Military Electrical Specification December 1989 FEATURES ■ Two independent, 0 to 1.5M bit/second, full-duplex channels, each with a separate crystal oscillator, baud

Contextual Info: ZI LO G INC 03 D È I T T Ö M O M B □□□fllSS □ | 9984043 ZILOG INC 03E 08155 Z8030 M ilitary T-iS-Zl-oy Z8000 Z-SCC Serial Communications Controller Military Zilog Electrical Specification July 1985 FEATURES • Two independent, 0 to 1.5M bit/second, full-duplex

T53B

Abstract: 6420H IDT72511 IDT72521 P105 10Q BWA
Contextual Info: I N T E G R A T E D D E VI CE M7E D m M Û 2 S 7 7 1 QOOTtiMfi 4 E S I D T PARALLEL BIDIRECTIONAL FIFO 512 x 18-BIT & 1024 x 18-BIT - r - ¥ é Integrated Device Technology, Inc. IDT72511 IDT72521 - 3 f FEATURES: DESCRIPTION: • Two side-by-side FIFO memory arrays for bidirectional

of IC 4511

Abstract: CI 4011 IC 4011 1N5186 1N5187 1N5188 1N5190 DIODE PK IN 4001 origin semiconductor rectifier Scans-0016000
Contextual Info: I^ lG O D D lS S MIL SPECS DDDl4G3fi 7 M IL-S-19500 '424 AMENDMENT 2 SUPERSEDING I AMENDMENT 1 16 January 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER TYPES TX AND NON-TX 1N5186, 1N5187, 1N5188, AND 1N5190

100C CONTACTOR ROCKWELL

Abstract: 100-C09 103S-103 100-c30 100C 140M sc 107 b
Contextual Info: 1 2 3 4 5 6 7 8 A 7 BUL 103 & BUL 107 AUX CONTACTS FOR 140-CMN CIRCUIT BREAKERS Last Characters in Cat. No. 103S-KTD2-GC40CK B 1 st CHAR BUL 103 & BUL 107 AUX CONTACTS FOR 140M CIRCUIT BREAKERS Last Characters in Cat. No. (103S-ATD2-DB40CK) Terminal Markings

100C

Abstract: 100-C09 100-C30 140M F343
Contextual Info: 1 2 3 4 5 6 7 8 A BUL 103 & BUL 107 AUX CONTACTS FOR 140-CMN CIRCUIT BREAKERS Last Characters in Cat. No. 103S-KTD2-GC40CK B 1 st CHAR 2 nd CHAR Terminal Markings Aux Contacts Trip Contacts X - - C 1 NO + 1 NC - D BUL 103 & BUL 107 AUX CONTACTS FOR 140M CIRCUIT BREAKERS

Contextual Info: A L L E GR O M I C R O S Y S T E M S 8514019 SPRAGUE. INC T3 D • 0 5 0 4 3 3 Ô 0 0 0 3 5 b 0 b ■ AL6R SEMICONDS / ICS 'T 'Z tl 0 93D 03 560J> V BIPOLAR TRANSISTOR CHIPS t ii NPN Transistors ‘TH ’ Device Types E LE CT R ICAL CH ARACTERISTICS at Tfl = 25°C

THC3414

Abstract: THC3415 THC3416 THC3417 THC3444 THC3498 THC3499 THC3500 THC3501 THC3563
Contextual Info: BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain IcB O Device Type THC3414 THC3415 THC3416 THC3417 THC3444 THC3498 THC3499 THC3500 THC3501 THC3563 THC3564 THC3565 THC3566 THC3567 THC3568

ic 4016

Abstract: 1N3206 DIODE PK IN 4001 MIL-STD-750 METHOD 2036 1n4373 MIL-STD-750 METHOD 2036 CONDITION E MIL-S-19491 D253S IC 4011 details
Contextual Info: MIL SPECS 0000155 NOTICE OF VALIDATION 000253*4 T | INCH-POUND MIL-S-19500/195D NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, MICRO-MINIATURE, SWITCHING TYPE 1N3206 Military specification MIL-S-19500/195D, dated 6 August

mmc 4011 E

Abstract: kdt 633 10Q18 photometer BV1010
Contextual Info: ‘*,. ?dIL-s-195m/467 25 January 1672 MIUTARY SEIKICONDUCTQR sPECIFICATIDN DEVICE, DIODE, TYPES JAN1N57S5 TW speculation ~Immt8 and 1. AND JANTXlN3703 LS mandatory &s 1.2 P@lcal 1.S ?daxfmum ent specifbxtton dbmfs!simns. covers by all &par tof Defense. See figure

THC3501

Abstract: THC3564 BBC DSA 22 THC3694
Contextual Info: S P R A G U E / S E N IC O N D ^ I GROUP D • ÛS13Û50 GQOBSbü ' 8514019 SPRAGUE! SEMICONDS / I C S 930 ' 03560J Y 7 ■ ' 1- | - —, . -■ —- — - BIPOLAR TRANSISTOR CHIPS ' 1 iI II NPN Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C

LSI53C895A-272

Abstract: LSI53C895A LSI53C895A-272BGA LSI53C895A272BGA ami 2109 hk 3a 4601 LSI53C895 sem 2105 SZM 804 PC99
Contextual Info: TECHNICAL MANUAL LSI53C895A PCI to Ultra2 SCSI Controller Version 2.2 April 2001 S14028.B This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.