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    IXTQ150N06P

    Abstract: 150N06P 150N06
    Text: PolarHTTM Power MOSFET IXTQ 150N06P VDSS ID25 RDS on = 60 V = 150 A ≤ 10 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 175°C 60 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ 60 V VGS VGSM Continuous Transient ±20


    Original     		PDF 150N06P IXTQ150N06P 150N06P 150N06

    150N06P

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTQ 150N06P VDSS ID25 RDS on = 60 V = 150 A ≤ 10 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C 60 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 60 V VGS VGSM


    Original     		PDF 150N06P 150N06P

    150N06P

    Abstract: 150N06 DS99254E
    Text: PolarHTTM Power MOSFET IXTQ 150N06P VDSS ID25 RDS on = 60 V = 150 A ≤ 10 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 175° C 60 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 60 V VGS VGSM Continuous Transient


    Original     		PDF 150N06P 150N06P 150N06 DS99254E