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    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN10H220LE 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT NEW PRODUCT Product Summary V BR DSS RDS(on) max 100V 220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V Features and Benefits ID TA = +25°C 2.3A 2.1A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching


    Original     		DMN10H220LE AEC-Q101 DS36475 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN10H220LE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Low On-Resistance • Low Input Capacitance 220mΩ @ VGS = 10V 2.3A • Fast Switching Speed 250mΩ @ VGS = 4.5V 2.1A • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)


    Original     		DMN10H220LE AEC-Q101 DS36475 PDF