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    Untitled

    Abstract: No abstract text available
    Text: DSS4160T 60V LOW VCE sat NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2)


    Original     		PDF DSS4160T AEC-Q101 J-STD-020 MIL-STD-202, DS35531

    Untitled

    Abstract: No abstract text available
    Text: DSS4160T 60V NPN LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 60V • • IC = 1A high Continuous Collector Current • • ICM = 2A Peak Pulse Current • RCE sat = 280mΩ for a Low Equivalent On-Resistance • Moisture Sensitivity: Level 1 per J-STD-020


    Original     		PDF DSS4160T J-STD-020 280mV MIL-STD-202, DS35531

    Untitled

    Abstract: No abstract text available
    Text: DSS4160T 60V LOW VCE sat NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2)


    Original     		PDF DSS4160T AEC-Q101 J-STD-020 MIL-STD-202, DS35531