Infrared Phototransistor
Abstract: QSB320
Text: QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)
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QSB320F
QEB421
QEB421
QSB320FTR
QSB320F
Infrared Phototransistor
QSB320
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K1 MARK 6PIN
Abstract: MOC1193S
Text: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES
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MOC119
MOC119
E90700
diffe700,
P01101067
MOC119300
MOC119300W
MOC1193S
MOC1193SD
K1 MARK 6PIN
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Infrared Phototransistor
Abstract: QSB320
Text: QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)
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QSB320
QEB421
QSB320
Infrared Phototransistor
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MOC119
Abstract: No abstract text available
Text: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES
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MOC119
MOC119
E90700
DS300382
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Infrared Phototransistor
Abstract: QSB320 QEB421
Text: QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)
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QSB320
QEB421
DS300386
Infrared Phototransistor
QSB320
QEB421
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QSB320
Abstract: No abstract text available
Text: QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)
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QSB320F
QEB421
DS300387
QSB320
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QVL25335
Abstract: No abstract text available
Text: SLOTTED OPTICAL SWITCH QVL25335 PACKAGE DIMENSIONS 3 2 .020 .50 .03 (.75) .023 (.60) XXXXXXX XX XXX .020 (.50) 4 1 SECTION X-X X XXXXXX XX XX X 1.150 (29.21) CL .177 (4.50) 2PLCS .276 (7.01) .398 (10.11) .138 (3.51) .638 (16.21) .200 (5.09) CL .350 (8.89)
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QVL25335
QVL25335
DS300380
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hma121
Abstract: HMA124 HMA2701 HMAA2705
Text: FULL PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS HMA121 HMA124 HMA2701 HMAA2705 DESCRIPTION The HMA series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54 mm.
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HMA121
HMA124
HMA2701
HMAA2705
HMAA2705:
HMA121:
HMA2701:
HMA124:
DS300383
hma121
HMA124
HMA2701
HMAA2705
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Untitled
Abstract: No abstract text available
Text: QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.083 (2.1) 0.067 (1.7) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)
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QEB421
DS300385
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QEB421
Abstract: No abstract text available
Text: QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.134 (3.4) 0.118 (3.0) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)
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QEB421
DS300385
QEB421
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TA 2092 N
Abstract: MOC119 SE-171 Swindon Silicon Systems
Text: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES
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MOC119
MOC119
E90700
DS300382
TA 2092 N
SE-171
Swindon Silicon Systems
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4N40
Abstract: solid state relay 220v 10a 4N39 IN5060 SC1460 4N39-4N40 Transistor SC1460
Text: PHOTO SCR OPTOCOUPLERS DESCRIPTION 4N39 4N40 The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES • • • • 10 A, T2L compatible, solid state relay
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E90700
4N40
solid state relay 220v 10a
4N39
IN5060
SC1460
4N39-4N40
Transistor SC1460
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QSB320
Abstract: No abstract text available
Text: QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)
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QSB320
QEB421
DS300386
QSB320
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Untitled
Abstract: No abstract text available
Text: QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.134 (3.4) 0.118 (3.0) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)
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QEB421
QEB421
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IN5060 diode
Abstract: 45010 4N40 in5060 4N39 AN40 SC1460
Text: PHOTO SCR OPTOCOUPLERS DESCRIPTION 4N39 4N40 The 4N39 and AN40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES • • • • 10 A, T2L compatible, solid state relay
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E90700
DS300381
IN5060 diode
45010
4N40
in5060
4N39
AN40
SC1460
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QSB320
Abstract: No abstract text available
Text: QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)
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QSB320F
QEB421
QEB421
QSB320FTR
QSB320
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QSB320
Abstract: No abstract text available
Text: QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)
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QSB320
QEB421
QSB320
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QSB320
Abstract: No abstract text available
Text: QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)
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QSB320
QEB421
DS300386
QSB320
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Photo SCR
Abstract: in5060 IN5060 diode Transistor SC1460 rgk 13 4N40 SCR TRIGGER PULSE circuit 4N39 SC1460 4N39-4N40
Text: PHOTO SCR OPTOCOUPLERS DESCRIPTION 4N39 4N40 The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES • • • • 10 A, T2L compatible, solid state relay
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E90700
DS30381
Photo SCR
in5060
IN5060 diode
Transistor SC1460
rgk 13
4N40
SCR TRIGGER PULSE circuit
4N39
SC1460
4N39-4N40
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QRE1113
Abstract: No abstract text available
Text: QRE1113.GR REFLECTIVE OBJECT SENSOR PACKAGE DIMENSIONS 0.114 2.90 0.099 (2.50) FEATURES 0.024 (0.60) 0.016 (0.40) 4 • Phototransistor output 3 • Tape and reel packaging • No contact surface sensing 0.079 (2.0) 0.063 (1.60) 0.130 (3.30) 0.122 (3.10)
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QRE1113
DS300384
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BYV27-200
Abstract: 202 sod57 DS30038
Text: BYV27/50 - BYV27/200 2.0A SUPER-FAST GLASS BODY RECTIFIER Features • · · · · · Hermetically Sealed Glass Body Construction Controlled Avalanche Characteristics Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop
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BYV27/50
BYV27/200
OD-57
OD-57,
MIL-STD-202,
DS30038
BYV27-200
202 sod57
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MOC119
Abstract: darlington 300w
Text: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES
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MOC119
MOC119
E90700
darlington 300w
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Untitled
Abstract: No abstract text available
Text: QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.134 (3.4) 0.118 (3.0) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)
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QEB421
QEB421
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Infrared Phototransistor
Abstract: QEB421 QSB320F QSB320
Text: QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)
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QSB320F
QEB421
DS300387
Infrared Phototransistor
QEB421
QSB320F
QSB320
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