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    DS1230Y-150 DALLAS Search Results

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    DS1230

    Abstract: DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC
    Text: 2000-12-22 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 73-766-01 DS1230Y 256k NV SRAM DS1230Y/AB 256k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the


    Original     		PDF DS1230Y DS1230Y/AB DS1230Y) DS1230AB) DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y-100 DS1230Y-85 DS9034PC

    P2215

    Abstract: P22102 P22372 P22121 40Pn B1 9742 P22071 dallas date code ds1230 208mil P22403
    Text: RELIABILITY MONITOR STRESS: TEMP CYCLE CONDITIONS: -40 TO 85°C MONITOR DATE ASSEMBLY PRODUCT REV DATE JOB NO CODE FACILITY LOT NO. PACKAGE READ POINT QTY FAIL DS2250T Y JUN 98 P22125 9814 DALLAS 101397 SIP STICK 100 11 DS2250T Y JUN 98 P22125 9814 DALLAS


    Original     		PDF DS2250T P22125 DS1210 DS1210S P2215 P22102 P22372 P22121 40Pn B1 9742 P22071 dallas date code ds1230 208mil P22403

    28256 eeprom

    Abstract: DALLAS SEMICONDUCTOR Ds1230 EEPROM 28256 dallas ds1230 a7 surface mount diode DS1230Y-200 DALLAS DS1230Y-70 DS1230Y-85 DQ213 DS1230AB
    Text: DS1230Y/AB DS1230Y/AB 256K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • DIP-package devices directly replace 32K x 8 volatile static RAM or EEPROM


    Original     		PDF DS1230Y/AB DS1230YL/ABL DS34PIN 28256 eeprom DALLAS SEMICONDUCTOR Ds1230 EEPROM 28256 dallas ds1230 a7 surface mount diode DS1230Y-200 DALLAS DS1230Y-70 DS1230Y-85 DQ213 DS1230AB

    P21256

    Abstract: P22102 P22154 P22149 ds1302 dallas h 9740 P22021 P21308
    Text: RELIABILITY MONITOR STRESS: TEMP CYCLE CONDITIONS: -40 TO 85°C MONITOR DATE ASSEMBLY PRODUCT REV DATE JOB NO CODE FACILITY LOT NO. PACKAGE READ POINT QTY FAIL DS2250T Y JUN 98 P22125 9814 DALLAS 101397 SIP STICK 100 11 DS2250T Y JUN 98 P22125 9814 DALLAS


    Original     		PDF DS2250T P22125 DS1000 DS1210 P21256 P22102 P22154 P22149 ds1302 dallas h 9740 P22021 P21308

    DS1230

    Abstract: DS1230AB DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS1230Y-85 DS9034PC
    Text: DS1230Y/AB DS1230Y/AB 256K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A14 1 28 VCC A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE • Low–power CMOS A2 8 21 A10 A1 9 20 CE • Read and write access times as fast as 70 ns


    Original     		PDF DS1230Y/AB DS1230 DS1230AB DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS1230Y-85 DS9034PC

    EEPROM 28256

    Abstract: DS1230 DS1230AB DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS1230Y-85 DS9034PC ADS1230
    Text: DS1230Y/AB DS1230Y/AB 256K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A14 1 28 VCC A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE • Low–power CMOS A2 8 21 A10 A1 9 20 CE • Read and write access times as fast as 70 ns


    Original     		PDF DS1230Y/AB EEPROM 28256 DS1230 DS1230AB DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS1230Y-85 DS9034PC ADS1230

    DS1230Y-120-IND

    Abstract: DS1230Y-85
    Text: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM,


    Original     		PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin 56-G0003-001A1 DS1230YP-100 DS1230YP-70IND DS1230Y-120-IND DS1230Y-85

    DS1230

    Abstract: DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC
    Text: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles


    Original     		PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC

    DS1230

    Abstract: EEPROM 28256 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC
    Text: DS1230Y/AB 256k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles


    Original     		PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin DS1230 EEPROM 28256 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC

    DS1230Y-200 DALLAS

    Abstract: DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS9034PC
    Text: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM,


    Original     		PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin DS1230Y-200 DALLAS DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS9034PC

    EEPROM 28256

    Abstract: DS1230AB CI 740 DS1230 DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-85 DS9034PC
    Text: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM,


    Original     		PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin EEPROM 28256 DS1230AB CI 740 DS1230 DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-85 DS9034PC

    Untitled

    Abstract: No abstract text available
    Text: DS1230Y/AB DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT • Data retention in the absence of VCc A14 • Data is automatically protected during the decrease in Vcc at power loss A12 • Directly replaces 32K x 8 volatile static RAM or EEPROM


    OCR Scan     		PDF DS1230Y/AB 28-pin 28-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS1230Y/AB DALLAS SEMICONDUCTOR DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • DIP-package devices directly replace 32K x 8 volatile


    OCR Scan     		PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin 68-pin packag02 DS1230Y/AB 34-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Data retention in the absence of V cc • Data is automatically protected during the decrease in V cc at power loss A14 I1 1 A12 I1 A7 I1 A6 I1 A5 I1 A4


    OCR Scan     		PDF DS1230Y/AB 28-pin 28-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS1230Y/AB DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT • Data retention in the absence of Vcc A14 11 1 A12 I1 2 A7 I1 3 A6 I1 4 A5 I1 5 A4 I1 6 A3 I1 7 A2 I1 8 • Data is automatically protected during the decrease in Vcc at power loss


    OCR Scan     		PDF DS1230Y/AB 1230Y/A DS1230Y/AB 28-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 A6 A5 A4 A3 A2 • Data is autom atically protected during power loss • Replaces 32K x 8 volatile static RAM, EEPROM or


    OCR Scan     		PDF DS1230Y/AB

    28256 eeprom

    Abstract: EEPROM 28256 DS1230Y-200 DALLAS 28256 DS1230 DS1230AB DS1230Y
    Text: DALLAS SEMICONDUCTOR CORP sbimao 3^E D 00G34DS a h d a l - T '^ 'Z 3 -V 7 ” DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN DESCRIPTION • Data retention in the absence of Vcc • Data Is automatically protected during the de­ crease in ^cc at power loss


    OCR Scan     		PDF DS1230Y/AB 28-pin 100ns, 120ns, 150ns, 200ns DS1230 28256 eeprom EEPROM 28256 DS1230Y-200 DALLAS 28256 DS1230AB DS1230Y

    28256 eeprom

    Abstract: No abstract text available
    Text: D S 1230Y/AB DALLAS SEMICONDUCTOR DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • Data retention in the absence of V qC • Data is automatically protected during the decrease in Vc c at power loss • Directly replaces 32K x 8 volatile static RAM or EEPROM


    OCR Scan     		PDF 1230Y/AB 28-pin DS1230Y/AB DS1230Y/AB 28256 eeprom

    1230Y

    Abstract: No abstract text available
    Text: D S 1230Y/A B DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I A7 I A6 I • Dl P-package devices directly replace 32K x 8 volatile


    OCR Scan     		PDF 1230Y/A DS1230Y/AB DS1230Y) DS1230AB) 2bl4130 013S3t S1230Y/AB DS1230YL/ABL 34-PIN DS34P 1230Y

    Untitled

    Abstract: No abstract text available
    Text: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 A6 A5 A4 A3 A2 • Data is autom atically protected during power loss • Replaces 32K x 8 volatile static RAM, EEPROM or


    OCR Scan     		PDF DS1230Y/AB

    1230Y

    Abstract: DALLAS SEMICONDUCTOR Ds1230
    Text: D S 1230Y/A B DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT A14 11 1 281 A12 112 2711WE A7 113 2611A13 A6 114 2511A8 A5 11 5 2411A9 A4 11 6 2311A11 A3 11 7 2211ÔË A2 118 21 11A10 A1 119 201I ^ A0 11 10 1911DQ7 DQO11 11 1811DQ6


    OCR Scan     		PDF 1230Y/A DS1230Y) DS1230AB) 28-pin 1230Y DS1230Y/AB 34-PIN DALLAS SEMICONDUCTOR Ds1230

    DALLAS SEMICONDUCTOR Ds1230

    Abstract: dallas ds1230 EEPROM 28256 1230Y 34-PIN DS1230 DS1230AB DS1230Y CI 0740 LV 2.8 DS1230Y-150 DALLAS
    Text: DS 1230Y/A B DALLAS DS1230Y/AB SEM ICON DUCTOR FEATURES 256K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I1 A7 I1 A6 I1 A5 I1 A4 I1


    OCR Scan     		PDF DS1230 DS1230Y/AB DS1230Y) DS1230AB) 28-pin 2bl4130 DS1230YL/ABL 34-PIN 68-pin DALLAS SEMICONDUCTOR Ds1230 dallas ds1230 EEPROM 28256 1230Y DS1230AB DS1230Y CI 0740 LV 2.8 DS1230Y-150 DALLAS

    Untitled

    Abstract: No abstract text available
    Text: D S 1 2 3 0 Y /A B DALLAS SEMICONDUCTOR FEATURES DS1 230Y/ AB 256K N onvolatile SRAM PIN ASSIGNMENT A14 111 281 A12 112 E 271IW A7 113 261IA13 A6 114 251IA8 A5 115 241IA9 A4 116 231IA11 A3 117 221I A2 118 211I A10 A1 119 201I^ A0 1110 191I DQ7 DQ01111 181I DQe


    OCR Scan     		PDF DS1230Y) DS1230AB)

    EEPROM 28256

    Abstract: DS1230 DS1230AB DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS9034PC
    Text: D S 1230Y /A B DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 1 0 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • R eplaces 32K x 8 volatile static RAM, EEPROM or


    OCR Scan     		PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin EEPROM 28256 DS1230 DS1230AB DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS9034PC