Untitled
Abstract: No abstract text available
Text: Formosa MS Chip Silicon Rectifier FFM201-L THRU FFM207-L List List. 1 Package outline. 2
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FFM201-L
FFM207-L
MIL-STD-750D
METHOD-1056
METHOD-4066-2
1000hrs.
METHOD-1038
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PDF
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FFM201-L
Abstract: FFM202-L FFM203-L FFM204-L FFM205-L FFM207-L
Text: Formosa MS Chip Silicon Rectifier FFM201-L THRU FFM207-L List List. 1 Package outline. 2
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Original
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FFM201-L
FFM207-L
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
1000hrs.
FFM202-L
FFM203-L
FFM204-L
FFM205-L
FFM207-L
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PDF
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Untitled
Abstract: No abstract text available
Text: RF3933 90W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical
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RF3933
RF3933
DS121207
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PDF
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C12R1
Abstract: TRANSISTOR J427
Text: RF3932 60W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 14dB at 2GHz 48V Operation Typical
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RF3932
RF3932
DS121207
C12R1
TRANSISTOR J427
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PDF
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Untitled
Abstract: No abstract text available
Text: Formosa MS Chip Fast Recovery Rectifiers FFM301-B THRU FFM307-B List List. 1 Package outline. 2
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Original
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FFM301-B
FFM307-B
MIL-STD-750D
METHOD-1051
1000hrs.
METHOD-1021
METHOD-1031
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PDF
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Untitled
Abstract: No abstract text available
Text: Formosa MS Chip Fast Recovery Rectifiers FFM201-L THRU FFM207-L List List. 1 Package outline. 2
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Original
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FFM201-L
FFM207-L
MIL-STD-750D
METHOD-1056
METHOD-4066-2
1000hrs.
METHOD-1021
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PDF
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Untitled
Abstract: No abstract text available
Text: Formosa MS Chip Fast Recovery Rectifiers FFM301-B THRU FFM307-B List List. 1 Package outline. 2
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Original
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FFM301-B
FFM307-B
MIL-STD-750D
METHOD-1036
JESD22-A102
METHOD-1051
METHOD-4066-2
1000hrs.
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PDF
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Untitled
Abstract: No abstract text available
Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical
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Original
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RF3934
RF3934
DS121207
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PDF
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Untitled
Abstract: No abstract text available
Text: Formosa MS Chip Fast Recovery Rectifiers FFM201-L THRU FFM207-L List List. 1 Package outline. 2
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Original
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FFM201-L
FFM207-L
MIL-STD-750D
METHOD-1036
JESD22-A102
METHOD-1051
METHOD-4066-2
1000hrs.
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PDF
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Untitled
Abstract: No abstract text available
Text: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz to 450MHz 125W GaN Power Amplifier Package: Flanged Ceramic, 2-Pin, RF400-2 Features Advanced GaN HEMT Technology Peak Power 125W Wideband Single Circuit for 225MHz to 450MHz
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RFHA1042
225MHz
450MHz
RFHA1042
RF400-2
-26dBc
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PDF
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Untitled
Abstract: No abstract text available
Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz
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Original
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RF3931
900MHz
RF3931
DS121207
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PDF
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