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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing	Original	PDF	FPD750 FPD7500 FPD750 mx750Î OT343, 12GHz 12GHzlable FPD750-000 FPD750-000SQ
Untitled Abstract: No abstract text available Text: FMA3058 FMA3058 2GHz to 20GHz BROADBAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA3058 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using our	Original	PDF	FMA3058 20GHz FMA3058 15dBm FMA3058-000 FMA3058-000SQ FMA3058-000S3 DS090609
RFVC1800 Abstract: RFVC-1800 Text: RFVC1800 RFVC1800 Preliminary WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8 GHz to 12 GHz Package: 4 mm x 4 mm x 1.1 mm Product Description Features RFMD’s RFVC1800 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5 V supply for circuit bias and 0 to +13 V Vtune for frequency control. The	Original	PDF	RFVC1800 RFVC1800 DS090609 RFVC-1800
FMA3058 Abstract: MIL-HDBK-263 fma-3058 GaN Amplifier 20GHz DS090609 Text: FMA3058 FMA3058 2GHz to 20GHz BROADBAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA3058 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using our	Original	PDF	FMA3058 20GHz FMA3058 15dBm 20GHz -12dB -10dB FMA3058-000 MIL-HDBK-263 fma-3058 GaN Amplifier 20GHz DS090609
FPD750 Abstract: MIL-HDBK-263 InP HBT transistor DS090609 Text: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing	Original	PDF	FPD750 FPD7500 FPD750 25mx750m OT343, 12GHz 38dBm MIL-HDBK-263 InP HBT transistor DS090609