L9NK30Z
Abstract: No abstract text available
Text: STL9NK30Z N-CHANNEL 300V - 0.36Ω - 9A PowerFLAT Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS on ID (1) Pw (1) STL9NK30Z 300 V < 0.4 Ω 9A 75 W • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.36 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY
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STL9NK30Z
L9NK30Z
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SMD resistor 334
Abstract: smd a7 SMD a7 47 Transistor SMD a7 Transistor RP03-0505SE RP03-0512SE RP03-0515SE RP03-1205SE RP03-1212SE RP03-1215SE
Text: Features Regulated Converters ● ● ● ● ● ● ● ● ● ● ● ● POWERLINE 2:1 Wide Input Voltage Range 3 Watts Regulated Output Power 1.6kVDC Isolation Also Available with Isolated Outputs, Output 1/Output 2 DS Isolation Low Profile, 10.2 mm Height
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DIP24
RP03-S
DIP24
RP03-053
RP03-0505SE*
RP03-0512SE*
Capacitive11
April-2005
SMD resistor 334
smd a7
SMD a7 47 Transistor
SMD a7 Transistor
RP03-0505SE
RP03-0512SE
RP03-0515SE
RP03-1205SE
RP03-1212SE
RP03-1215SE
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STP75NE75
Abstract: STP75NE75 MOSFET
Text: STP75NE75 N - CHANNEL 75V - 0.01Ω - 75A - TO-220 STripFET ” POWER MOSFET TARGET DATA TYPE STP75NE75 • ■ ■ ■ V DSS R DS on ID 75 V <0.013 Ω 75 A TYPICAL RDS(on) = 0.01 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
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STP75NE75
O-220
STP75NE75
STP75NE75 MOSFET
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037n08n
Abstract: 037n08 JESD22 75F75
Text: IPA037N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS(on),max 3.7 mΩ ID 75 A • Excellent gate charge x R DS(on) product (FOM)
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IPA037N08N3
PG-TO220-FP
037N08N
037n08n
037n08
JESD22
75F75
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STU309DH
Abstract: stu309 stu309d U309DH 309d TO-252-4L
Text: S T U309DH S amHop Microelectronics C orp. Apr 20 2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -14A R DS (ON) ( m Ω )
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U309DH
O-252-4L
STU309DH
O-252-4L
STU309DH
stu309
stu309d
U309DH
309d
TO-252-4L
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STU309DH
Abstract: stu309 stu309d U309DH
Text: S T U309DH Green Product S amHop Microelectronics C orp. Apr 20 2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (P -C hannel) P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A Max V DS S ID
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U309DH
O-252-4L
STU309DH
O-252-4L
STU309DH
stu309
stu309d
U309DH
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Untitled
Abstract: No abstract text available
Text: STB75NE75 N - CHANNEL 75V - 0.01 Ω - 75A - D2PAK STripFET POWER MOSFET TYPE STB75NE75 • ■ ■ ■ ■ ■ VDSS R DS on ID 75 V <0.013 Ω 75 A TYPICAL RDS(on) = 0.01 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
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STB75NE75
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STP75NE75
Abstract: STP75NE75 MOSFET
Text: STP75NE75 N - CHANNEL 75V - 0.01 Ω - 75A - TO-220 STripFET POWER MOSFET TYPE STP75NE75 • ■ ■ ■ V DSS R DS on ID 75 V <0.013 Ω 75 A TYPICAL RDS(on) = 0.01 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
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STP75NE75
O-220
STP75NE75
STP75NE75 MOSFET
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stu312d
Abstract: pf 312D U312D To-252-4 stu312
Text: S T U312D S amHop Microelectronics C orp. Oct 08 2008 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -14A R DS (ON) ( m Ω )
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U312D
O-252-4L
STU312D
O-252-4L
stu312d
pf 312D
U312D
To-252-4
stu312
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stu312d
Abstract: stu312 U312D 312d pf 312D STU31
Text: S T U312D Green Product S amHop Microelectronics C orp. Oct 08 2008 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (P -C hannel) P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A Max V DS S ID
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U312D
O-252-4L
STU312D
O-252-4L
stu312d
stu312
U312D
312d
pf 312D
STU31
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STB75NE75
Abstract: D2PAK to-263
Text: STB75NE75 N - CHANNEL 75V - 0.01 Ω - 75A - D2PAK STripFET POWER MOSFET TYPE STB75NE75 • ■ ■ ■ ■ ■ V DSS R DS on ID 75 V <0.013 Ω 75 A TYPICAL RDS(on) = 0.01 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
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STB75NE75
STB75NE75
D2PAK to-263
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Untitled
Abstract: No abstract text available
Text: IPA037N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters VDS 80 V RDS(on),max 3.7 mW ID 75 A • Excellent gate charge x R DS(on) product (FOM)
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IPA037N08N3
IEC61249-2-21
PG-TO220-FP
037N08N
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tf 3621
Abstract: 1575R 3621 c 3621
Text: S T S 3621 S amHop Microelectronics C orp. Oct. 24 2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 3A R DS (ON) ( m Ω ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -2A R DS (ON) ( m Ω )
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stu309d
Abstract: stu309 s t u 309d U309D
Text: S T U309D S amHop Microelectronics C orp. Nov 22 2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (P -C hannel) P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A Max V DS S ID -30V -14A R DS (ON) ( m Ω )
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U309D
O-252-4L
STU309D
O-252-4L
stu309d
stu309
s t u 309d
U309D
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stu409dh
Abstract: TO-252-4L stu409d
Text: S T U409DH S amHop Microelectronics C orp. May 29 2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 18A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S
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U409DH
O-252-4L
O-252-4L
stu409dh
TO-252-4L
stu409d
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PDF
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TO-252-4L
Abstract: stu409d
Text: S T U409DH Green Product S amHop Microelectronics C orp. May 29 2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (P -C hannel) P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 40V 18A Max V DS S ID
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U409DH
O-252-4L
O-252-4L
TO-252-4L
stu409d
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PDF
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M8407
Abstract: STM8407
Text: S T M8407 S amHop Microelectronics C orp. J une.26,2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7.2A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -6A R DS (ON) ( m W )
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M8407
M8407
STM8407
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STB75NE75
Abstract: No abstract text available
Text: STB75NE75 N - CHANNEL 75V - 0.01 Ω - 75A - D2PAK STripFET POWER MOSFET TYPE STB75NE75 VDSS R DS on ID 75 V <0.013 Ω 75 A TYPICAL RDS(on) = 0.01 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT
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STB75NE75
STB75NE75
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STU310DH
Abstract: TO-252-4L stu310
Text: S T U310DH S amHop Microelectronics C orp. May,28,2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 30V 19A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S
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U310DH
O-252-4L
STU310DH
O-252-4L
O-252-4
STU310DH
TO-252-4L
stu310
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STP75NE75
Abstract: STP75NE75FP
Text: STP75NE75 STP75NE75FP N - CHANNEL 75V - 0.01Ω - 75A TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS on ID STP75NE75 STP75NE75FP 75 V 75 V < 0.013 Ω < 0.013 Ω 75 A 40 A • ■ ■ ■ TYPICAL RDS(on) = 0.01 Ω EXCEPTIONAL dv/dt CAPABILITY
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STP75NE75
STP75NE75FP
O-220/TO-220FP
O-220
O-220FP
STP75NE75
STP75NE75FP
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTF200N10T Trench Gate Power MOSFET VDSS ID25 = 100 V = 103 A Ω ≤ 6.0 mΩ RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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IXTF200N10T
200N10T
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2N08L07
Abstract: 2N08L07 POWER 2n08l07 marking
Text: IPB80N08S2L-07 IPP80N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow V DS 75 V R DS on ,max (SMD version) 6.8 mW ID 80 A • 175°C operating temperature
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IPB80N08S2L-07
IPP80N08S2L-07
PG-TO263-3-2
PG-TO220-3-1
SP0002-19051
2N08L07
2N08L07
2N08L07 POWER
2n08l07 marking
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STA6611
Abstract: No abstract text available
Text: STA6611 SamHop Microelectronics Corp. Nov. 22, 2006 Dual Enhancement Mode Field Effect Transistor N and P Channel (N-Channel) PRODUCT SUMMARY VDSS RDS(ON) ( m Ω ) ID Max VDSS ID -30V -6.6A RDS(ON) ( m Ω ) Max 35 @ VGS = -10V 23 @ VGS = 10V 30V (P-Channel)
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STA6611
STA6611
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Untitled
Abstract: No abstract text available
Text: Tem ic DG535/536 Semiconductors 16-Channel Wideband Video Multiplexers Features • • • • • • • Crosstalk: -100 dB @ 5 MHz 300 MHz Bandwidth Low Input and Output Capacitance Low Power: 75 fiW Low r DS on : 50 Q On-Board Address Latches Disable Output
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OCR Scan
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DG535/536
16-Channel
DG535/536
DG536
aMC14504B.
DG536.
P-32167--Rev.
15-Nov-93
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