STK 2028
Abstract: RTL 2832 STK 4133 II gc 7137 ad STK 5333 stk 5392 stk 5490 stk 2265 STK 5474 STK 4197
Text: Mon Feb 6 10:03:42 1995 Page 1 'MENSCH COMPUTER ROM SOFTWARE' 'IRQVCTRS.ASM-IRQ VECTOR EQUATES FOR WDC65C265' 2500 A.D. 65816 Macro Assembler - Version 5.01g -Input Filename : irom2.asm Output Filename : irom2.obj
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WDC65C265'
STK 2028
RTL 2832
STK 4133 II
gc 7137 ad
STK 5333
stk 5392
stk 5490
stk 2265
STK 5474
STK 4197
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UFNF430
Abstract: diode ed 2437 UFNF432
Text: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.
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UFNF430
UFNF431
UFNF432
UFNF433
UFNF430
diode ed 2437
UFNF432
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Untitled
Abstract: No abstract text available
Text: 10 leIENQTE m m MATERIAL / iT W Y HOUSING : Tit' PA • UL9UV-0 POLYAMIDE .NATURAL(WHITE) .GLASS FILLED .UL9UV-0 F(PPS) • + fi7 < M ) . n=? A aVS. UL9UV-0 ACTUATOR POLYPHENYLENE SULFIDE,NATURAL(BROWN),GLASS FILLED UL9LV-0 $+ L 'JytMHO.2) TERMINAL PHOSPHOR BR0NZE(t=0.2)
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05MAX.
2013/0A/05
SD-52892-0Z5
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FX003QZ
Abstract: M83T oa 1160 FX003QC FX003QE ZVEI Tone decoder FX-003-QZ
Text: ~ r-i5 -2 1 -0 5 P R E L IM IN A R Y IN F O R M A T IO N 1 2 3 4 5 6 P U B L IC A T IO N D /2 2 4 PIN FUNCTIONS 23kHz clock out 9 03 O s e .o u t 10 Q2 O s e .in 11 Q1 Vss 1 2 Oo HOLD 13 V d d Po wer up reset 14 S i g n a l 7 8 Data 15 16 •k change *Connected
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E37437b
-T-15-2
D/224
23kHz
FX003-QA
FX003QC
FX003QE
FX003QZ
M83TD
S9832CMICRO
FX003QZ
M83T
oa 1160
ZVEI Tone decoder
FX-003-QZ
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MRF163
Abstract: Motorola AN211
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF163 The RF MOSFET Line 25 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2 .0 -4 0 0 M H z N-CHANNEL MOS BROADBAND RF POWER designed for w ideband large-signal output and driver applica tions in the 2 0 to 4 00 MHz range
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MRF163
RF163
MRF163
Motorola AN211
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d1835
Abstract: RA11b RA5B Toshiba RA8B D018 D019 D032 D051 RA1A
Text: TOSHIBA THMY1GE0SC70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY1GE0SC is a 134,217,728-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM804CFT DRAMs and PLL/Registers on a printed circuit board.
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GE0SC70
728-WORD
72-BIT
TC59SM804CFT
72-bit
111LLU111
d1835
RA11b
RA5B
Toshiba RA8B
D018
D019
D032
D051
RA1A
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Untitled
Abstract: No abstract text available
Text: S-2939GR/I C M O S 4 K - b i t serial E 2P R O M E as y in te r fa c e w ith s e ria l port W ith m e m o r y pro te c tio n , C S a c tiv e "L ” The S-2939GR/I is a high speed, low power 4K-bit E 2PROM that uses the CM O S floating-gate process. The organization is 256-word x 16-bit, and it is read or
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S-2939GR/I
S-2939GR/I
256-word
16-bit,
wit15
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z16c35
Abstract: No abstract text available
Text: < £ 2 iL Œ 3 P r o d u c t S p e c if ic a t io n Z16C35/Z85C35 CMOS ISCC INTEGRATED SERIAL COMMUNICATIONS CONTROLLER FEATURES • Two G eneral-Purpose SCC Channels, Four DMA Channel; and a Universal Bus Interface Unit. ■ Software Com patible to the Zilog CMOS SCC
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Z16C35/Z85C35
32-Bit
16-Pin
68-Pin
Z16C35
Z16C3510VSC
Z16C3516VSC
Z16C35/Z85C35
16C35
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Untitled
Abstract: No abstract text available
Text: H A R R I SS E M I C O N DS E C T O R 37E D H M3D2271 0 325522 t >*HAS Technical u a t a _ J_ _ CD54/74AC273 CD54/74A C T273 - " F ^ U -D X l Octal D Flip-Flop with Reset Type Features:
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CD54/74AC273
CD54/74A
CD54/74ACT273
MS-013AD)
24-Lead
92CS-39037R2
92CS-38926R2
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RA5B
Abstract: D018 D019 D032 D051 THMY1GE2SB70
Text: TO SH IBA THMY1GE2SB70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY1GE2SB is a 134,217,728-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM824BFT DRAMs Top , 18 TC59SM804BFT DRAMs (Bottom) and PLL/Registers on a printed
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THMY1GE2SB70
728-WORD
72-BIT
TC59SM824BFT
TC59SM804BFT
72-bit
AuHMY1GE2SB70
RA5B
D018
D019
D032
D051
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30h80
Abstract: No abstract text available
Text: TO SH IBA THMY1GE2SB70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY1GE2SB is a 134,217,728-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.
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THMY1GE2SB70
728-word
72-bit
TC59SM804BFT
72-bit
30h80
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY51E2SA70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E2SA is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704AFT DRAMs and PLL/Registers on a printed circuit board.
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THMY51E2SA70
THMY51E2SA
864-word
72-bit
TC59SM704AFT
72-bit
THMY51E2SA)
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Untitled
Abstract: No abstract text available
Text: Dual 8-Bit Buffered Multiplying CMOS D/A Converter PM-7528 ANALOG DEVICES □ FEATURES • • • • • • • • • • • • • O RDER IN G INFO R M ATIO N ' On-Chip Latches For Both DACs +5V To +1SV Single Supply Operation DACs Matched To 1% Four-Quadrant Multiplication
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PM-7528
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RA11b
Abstract: RA5B D018 D019 D032 ra2b ra8b
Text: TOSHIBA THMY51E0SA70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E0SA is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704AFT DRAMs and PLL/Registers on a printed circuit board.
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THMY51
E0SA70
864-WORD
72-BIT
THMY51E0SA
TC59SM704AFT
72-bit
RA11b
RA5B
D018
D019
D032
ra2b
ra8b
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Untitled
Abstract: No abstract text available
Text: TO SH IBA THMY51E0SA70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E0SA is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704AFT DRAMs and PLL/Registers on a printed circuit board.
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864-WORD
72-BIT
THMY51E0SA70
THMY51E0SA
TC59SM704AFT
72-bit
THMY51EOSA)
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ra8b
Abstract: RA-2 RA1A D018 D019 D032 D033 D051 THMY1GE0SB70 RA12A
Text: TOSHIBA THMY1GE0SB70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 134,217,728-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY1GE0SB is a 134,217,728-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.
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THMY1GE0SB70
728-WORD
72-BIT
TC59SM804BFT
72-bit
ra8b
RA-2
RA1A
D018
D019
D032
D033
D051
RA12A
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RA5B
Abstract: d1835 RA11b ra8b D018 D019 D032 D033 D051 THMY1GE0SB70
Text: TOSHIBA THMY1GE0SB70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 134,217,728-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY1GE0SB is a 134,217,728-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.
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THMY1GE0SB70
728-WORD
72-BIT
TC59SM804BFT
72-bit
RA5B
d1835
RA11b
ra8b
D018
D019
D032
D033
D051
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RA5B
Abstract: RA11b D018 D019 D032 d1835
Text: TO SH IBA THMY51E2SA70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E2SA is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704AFT DRAMs and PLL/Registers on a printed circuit board.
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THMY51
E2SA70
864-WORD
72-BIT
THMY51E2SA
TC59SM704AFT
72-bit
RA5B
RA11b
D018
D019
D032
d1835
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RA8A
Abstract: D018 D019 D032 RA11b
Text: TO SH IBA THMY51E0SA70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E0SA is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704AFT DRAMs and PLL/Registers on a printed circuit board.
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THMY51
E0SA70
864-WORD
72-BIT
THMY51E0SA
TC59SM704AFT
72-bit
RA8A
D018
D019
D032
RA11b
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RA5B
Abstract: RA11b d044 D018 D019 D032 D033 D051 THMY1GE0SB70
Text: TOSHIBA THMY1GE0SB70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 134,217,728-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY1GE0SB is a 134,217,728-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.
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THMY1GE0SB70
728-WORD
72-BIT
TC59SM804BFT
72-bit
RA5B
RA11b
d044
D018
D019
D032
D033
D051
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transistor p87
Abstract: transistor KL3 transistor AA P07
Text: MITSUBISHI MICROCOMPUTERS M37734M8LXXXHP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION • In te rru p ts . 19 types, 7 levels The M 37734M 8LX X X H P is a single-chip m icroco m p ute r u sing th e
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M37734M8LXXXHP
16-BIT
37734M
transistor p87
transistor KL3
transistor AA P07
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Untitled
Abstract: No abstract text available
Text: r a iO M O G O M V Military ì860tm 64-Bit M icro p ro cesso r • Compatible with Industry Standards — ANSI/IEEE Standard 754-1985 for Binary Floating-Point Arithmetic — 386 /j 486TM Microprocessor Data Formats and Page Table Entries ■ Parallel Architecture that Supports Up
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860tm
64-Bit
486TM
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PM-7528
Abstract: BOA 2430 pm7528fs AD7528CO PMI PM7528 ad7528l
Text: ANALO G D EV IC ES □ Dual 8-Bit Buffered Multiplying CMOS D/A Converter PM-7528 FEATURES O RDER IN G IN FOR M ATIO N ' • • • • • • • • • • • • • On-Chip Latches For Both DACs +5V To +15V Single Supply Operation DACs Matched To 1%
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PM-7528
PM7528ER
PM-7528
BOA 2430
pm7528fs
AD7528CO
PMI PM7528
ad7528l
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Untitled
Abstract: No abstract text available
Text: H D 4 0 7 4 0 0 8 HMCS400 SERIES ZTAT MICROCOMPUTER Pin Arrangem ent Description T h e H D 4 0 7 4 0 0 8 is a m ass-storage ZTAT™ m icro com puter incorporating 8K w ords of program m able ROM and 512 d igits of R A M . It is a CM O S 4-bit sin gle-ch ip H M C S 400-series m icrocom puter
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HMCS400
400-series
4074008S,
HD4074008C
HD4074008
HD4074008-
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