DS 1251C Search Results

c1251c

Abstract: ic ls46a
Contextual Info: IRFS840A A dvanced Power MOSFET FEATURES b v dss - 500 V Avalanche Rugged Technology • Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance _p ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA(Max.) @ VDS = 500V

D751

Abstract: AD751 AD7510DI AD7511 AD7511DI slma
Contextual Info: — 250 — AD7510DI, A D 7 5 1 1 DI, AD751 2DI d i- c m o s 7 tp y -x > i A D • « « È < j! |# tt V iu > = + 1 5 V , F SS= - 1 5 V , Ta= 25V. PI pö '¡ë ^ J .K ^ U - F ^ S 'J' rDS(ON)* r DSi ON)"^ y ^ds(on) H U *7 h rosioN) H U 7 b<7)H /skOFF)* 7'mm < T a^ T mux

schematic diagram tv sharp

Abstract: tv schematic diagram SHARP tv schematic diagram SHARP power supply schematic diagram 200v dc voltage regulator sharp tv schematic diagram schematic tv sharp HX 711 sharp tv power supply section circuit diagram TV SHARP Schematic Power Supply power supply schematic diagram sharp
Contextual Info: NEW PRODUCT INFORMATION Primary Regulator PQ1PF1 O U T LIN E D IM E N S IO N S G E N E R A L D E S C R IP T IO N U n it : m m Sharp's PQ 1PF1 achieved an integration o f power M O SFET and control IC, used for primary sid e o f sw itch in g p ow er su p p lies. T h is d e v ic e m eets the n eed for m ore

c1251c

Abstract: c-1251C *c1251c
Contextual Info: IRLS620A Advanced Power MOSFET FEATURES bvdss • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 u A M a x @ VOS= 200V ■ Lower RDS(on) ■' 0.609 £2 (Typ.)

m2817a

Abstract: 16K Electrically Erasable PROMs
Contextual Info: E/M2817A Timer E2 16K Electrically Erasable PROMs October 1989 Features Description • Military and Temperature Range • -55° C to + 1251C: M2817A Military • -4 0 0 C to +85° C: E2817A (Extended) SEEQ’s M2817A is a 5 Vonly, 2Kx 8 electrically erasable

*c1251c

Abstract: TC100LC
Contextual Info: IRFS450A Advanced Power MOSFET FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA M ax. @ VDS= 500V

Contextual Info: SOLID-ELECTROLYTE TANTALUM CAPACITORS MATSUO TYPE TANCHIP SERIES A CAUTIONS 281 •This capacitor is polarized, do not apply reverse voltage. •The sum of peak value of AC and DC voltage should not exceed the rated voltage. •This catalog is designed for providing general information. Please

U2N60

Abstract: *c1251c
Contextual Info: SSR/U2N60A Advanced Power MOSFET FEATURES b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 m A Max. @ VDS= 600V ■

Contextual Info: TOSHIBA { D I S C R E T E / O P T 0> ^ 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR TECHNICAL DATA 99D DE j t u t r-diiU □□lL.T4cf O 16949 D T -M 3-ÄS- TOSHIBA GTR MODULE MG 1 0 G 4 G M 1 SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS.

Contextual Info: Fairchild Imaging Sensors Se n s o r s PRELIMINARY CCD192 6000 Element Linear Image Sensor FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 6000 x 1 photosite array 10/jm x 7 f i m photosites on 10pm pitch Anti-blooming and integration control Enhanced resolution In the red region

Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally

DS 1251C

Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally

Contextual Info: FDMS3606S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally

1201D

Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally

22CF21CD

Abstract: 11-CQ2 22cF
Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally

9acf

Abstract: 9acf 21cd FDMS3669S
Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 10 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally

547 MOSFET

Abstract: *c1251c
Contextual Info: SSP1N50A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss ” 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 jjA Max. @ VOS= 500V

MA1040

Abstract: ma1050 1SS202
Contextual Info: 1 Introduction We at Shindengen have devoted much time and This manual is meant to give the user a fuller energy to produce the MAI 000 Series of Power understanding of the functions of the MAI 000 Modules Series for switching power supplies. This its electric

AD751

Abstract: AD7511DIS oc07 AD7510DI AD7511 AD7511DI AD7512DI
Contextual Info: -249 A D 7 5 1 0 D I , A D 7 5 1 1 D I, A D 7 5 1 2 D I d i - c m o s T T O ' y - X ' í I * * ! £ « A - y c c —G N D V ss-G N D M M B ^ ± 25V A D 7 5 1 0 D I t A D 7 5 1 1 D I t ± í ' t7 y L T l '-?>. F S P S T # ¡ S f f i 7 t n ^ - x - í -y ^ T r ,

7805F VR

Abstract: 7812F VR 7805F 7815F VR 7812F N7815 7815F 7818F 7818F VR AN7800
Contextual Info: Panasonic Voltage Regulators A N7800/A N 7800F Series 3-pin Positive Output Voltage Regulators 1A Type • Overview T he A N 7800 series and the A N 7800F series are 3-pin fixed positive output voltage regulators. Stabilized fixed output voltage is obtained from unstable DC input voltage

SH60C

Contextual Info: y»'y, <m |k • »-' 1SPEC No. I E L 0 8 X 1 0 8 ISSUE: Nov IS 1996 To S P Product Type E C I F I C A T I O N S 4 M D R A M ( 1 M x 4 b i t L H 6 B 4 4 0 0 B K —6 lodel No. (LH6B4B6K) XThis specifications contains 26 pages including the cover and appendix.

Used Electronics

Contextual Info: KA340TXX FIXED VOLTAGE REGULATOR {POSITIVE 3-TERMINAL1A POSITIVE VOLTAGE REGULATORS TO-220 The KA340TXX series of three-terminal positive voltage regulators are available in TO-220 package and with several fixed output vo­ ltages, providing better performance than 78XX series regulators.

Contextual Info: KA340TXX Industrial 3-TERMINAL 1A POSITIVE VOLTAGE REGULATORS TO-220 The KA340XX series ot three.terminai positive voltage regulators are available in T0-220 package and with several fixed output voltages, providing better performance than 78XX series regulators

Contextual Info: GENERAL AND APPLICATION INFORMATION IN T R O D U C IN G T H E LO W VOLTAG E LOG IC FAMILIES. III Low Power Dissipation: - Better than High Speed logic families. T oday’s portable and battery-operated system designer is faced with the problem of keeping