skm 195 gal 062
Abstract: 5G06 skm 195 gb 062 Semitrans M SKM
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/60 °C Tcase = 25/60 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 600 600 230 / 195
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diode b6 k 450
Abstract: semikron 100 gb 06 semikron 400 gb 062 M400 062D
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/60 °C Tcase = 25/60 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 600 600 475 / 400
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Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/60 °C Tcase = 25/60 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 600 600 475 / 400
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Untitled
Abstract: No abstract text available
Text: Values Units SEMICELL CAL - Diode Chips 600 135 1260 V A A SKCD 81C 060 I 5 SKCD 81C 060 IS 5) 7950 375 – 40 . +150 125) A2s °C °C Absolute Maximum Ratings Symbol Conditions VRRM IF IFSM 1) 4) (> 3 bondwires 300 µm Ø) tp = 10 ms; sin; Tj = 150 °C)
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CD81C060
CD081C060
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diode 47c
Abstract: uc850
Text: Absolute Maximum Ratings Symbol Conditions VRRM IF IFSM I2 t Tsolder Tvj, Tstg 1) Values Units 600 70 720 V A A 2600 375 – 40 . +150 (125) A2s °C °C 4) (> 6 bondwires 300 µm Ø) tp = 10 ms; sin; Tj = 150 °C) tp = 10 ms; sin; Tj = 150 °C) max. 120 s (transfer)
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Abstract: No abstract text available
Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM600DY-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM600DY-66S ● IF . 600A ● VRRM . 3300V
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RM600DY-66S
450A/Â
48K/kW
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RM600DY-66S
Abstract: No abstract text available
Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM600DY-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM600DY-66S ● IF . 600A ● VRRM . 3300V
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RM600DY-66S
48K/kW
RM600DY-66S
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM600HE-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM600HE-90S ● IF . 600A ● VRRM . 4500V
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RM600HE-90S
39K/kW
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skm 191
Abstract: semikron skm 191 ups circuit diagram using igbt
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/85 °C Tcase = 25/85 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 600 / 400
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Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol Conditions VRRM IF IFSM I2 t Tsolder Tvj , T stg 1) Values Units 600 44 440 V A A 970 375 – 40 . +150 (125) A2s °C °C 4) (> 6 bondwires 300 µm Ø) tp = 10 ms; sin; Tj = 150 °C) tp = 10 ms; sin; Tj = 150 °C) max. 120 s (transfer)
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CD031C060
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CM600HG-130H
Abstract: No abstract text available
Text: CM600HG-130H Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD HVIGBT Module 600 Amperes/6500 Volts A D D D M8 NUTS (6 TYP.) C C C F E B F E E L E E G M Description: Powerex IGBTMOD™ Modules are designed for use in switching
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CM600HG-130H
Amperes/6500
100kHz
CM600HG-130H
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CM600HG-130H
Abstract: CM600HG IGBT 6500v cm508
Text: CM600HG-130H Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Single IGBTMOD HVIGBT Module 600 Amperes/6500 Volts A D D D M8 NUTS (6 TYP.) C C C F E B F E E L E E G M Description: Powerex IGBTMOD™ Modules are designed for use in switching
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CM600HG-130H
Amperes/6500
100kHz
CM600HG-130H
CM600HG
IGBT 6500v
cm508
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300GB
Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits with the si GB063D SKM 300 CIRCUIT
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 600 600 400 / 300 450 / 450 ± 20 1350 –40 . +150 (125) 2500 Class F 40/125/56 RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms
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200GB
Abstract: No abstract text available
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 600 600 260 / 200
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uc1025
Abstract: No abstract text available
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Units RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 600 600 200 / 150
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skm 191
Abstract: semikron skm 191 NC2000
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/85 °C Tcase = 25/85 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 600 / 400
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GAL063D
Abstract: NPT-IGBT SKM GAL -700 -4
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 600 600 400 / 300 450 / 450 ± 20 1350 –40 . +150 (125) 2500 Class F 40/125/56 RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms
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CM600HB-90H
Abstract: No abstract text available
Text: CM600HB-90H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD HVIGBT 600 Amperes/4500 Volts A D L V NUTS (4 TYP) L N S Y P C C E E G F E CM B Q C E G R U NUTS (3 TYP) T H W (6 TYP) J M K X C C E E C Features:
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CM600HB-90H
Amperes/4500
180nH
100nH
CM600HB-90H
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150GB
Abstract: GB063D
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Units RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 600 600 200 / 150
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GS 069 pwm
Abstract: FDS7766 AN-6002 FDS6670A FDS6688 FDS7764A mosfet fast sw power
Text: www.fairchildsemi.com Application Note 6002 “Shoot-through” in Synchronous Buck Converters Abstract The synchronous buck circuit is in widespread use to provide “point of use” high current, low voltage power for CPU’s, chipsets, peripherals etc. In the
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FDS6670A
FDS7764A
FDS7766
FDS6688
FDS6688
300KHz.
GS 069 pwm
AN-6002
mosfet fast sw power
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FDC37C65
Abstract: fdc37c65c IBM Floppy Single Density PD780 NEC PD780
Text: STANDARD MICROSYSTEMS CORPORATION. FDC37C65C + PRELIMINARY COMPONENT PRODUCTS DIVISION r 80 Artav Orive. Hauooauge. NY 11788 15161 435-6000 Fa* <516 2Î1 -6004 2.88MB Floppy Disk Controller FEATURES • • • • • • • • • • • • • •
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FDC37C65C
40-Pin
44-Pin
FDC37C65
fdc37c65c
IBM Floppy Single Density
PD780
NEC PD780
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FDC37C65C
Abstract: FDC37C65C P Floppy Disk Subsystem Controller
Text: FDC37C65C STANDARD MICROSYSTEMS CORPORATION. PR E L IM IN A R Y COMPONENT PRODUCTS DIVISION BO Arkay onve Haupoauge, n y 11788 5161435-6000 Fax <5161 2 Ï1 -600« Floppy Disk Subsystem Controller FEATURES • • • • • • • • • • • • SMSCS010
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FDC37C65C
40-Pin
44-Pin
SMSCS010
FDC37C65C
FDC37C65C P
Floppy Disk Subsystem Controller
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L200A
Abstract: No abstract text available
Text: International S Rectifier PD-9.976B IRGNI200F06 Fast Speed IGBT "CHOPPER" IGBT INT-A-PAK VŒ = 600V •Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant •Switching-Loss Rating includes all "tail" losses lc = 200A
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10KHz
50KHz
IRGNI200F06
100nH
C-212
L200A
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Untitled
Abstract: No abstract text available
Text: International S I Rectifier PD-9.958B IRGTI120F06 Fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK VCE = 600V • Rugged Design • Simple gate-drive • Fast operation up to 10KHz hard switching, or 50K H z resonant • Switching-Loss Rating includes all "tail"
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10KHz
IRGTI120F06
C-223
100nH
C-224
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