Untitled
Abstract: No abstract text available
Text: UC1724 UC2724 UC3724 Isolated Drive Transmitter FEATURES DESCRIPTION • 500mA Output Drive, Source or Sink The UC1724 family of Isolated Drive Transmitters, along with the UC1725 Isolated Drivers, provide a unique solution to driving isolated power MOSFET gates. They are particularly suited to drive the high-side devices
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UC1724
UC2724
UC3724
500mA
600kHz
UC1725
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Untitled
Abstract: No abstract text available
Text: 1.8V Drive Nch MOSFET RUE003N02 Structure Silicon N-channel MOSFET Dimensions Unit : mm EMT3 Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. 4) Drive circuits can be simple.
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RUE003N02
R1120A
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Untitled
Abstract: No abstract text available
Text: 2.5V Drive Nch MOSFET RTQ020N05 zDimensions Unit : mm zStructure Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low On-resistance. 2) Space savingsmall surface mount package (TSMT6). 3) Low voltage drive (2.5V drive). (5) 0.7
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RTQ020N05
R0039A
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Untitled
Abstract: No abstract text available
Text: 4V Drive Nch MOSFET RHU002N06 Structure Silicon N-channel MOSFET transistor Dimensions Unit : mm UMT3 2.0 0.9 0.2 0.3 0.7 1.25 (2) (1) 0.1Min. Features 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 5) Drive circuits can be simple.
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RHU002N06
R1120A
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K4067
Abstract: A0565 2SK4067
Text: 2SK4067 Ordering number : ENA0565 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4067 General-Purpose Switching Device Applications Features • • Motor drive applications. 4.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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2SK4067
ENA0565
A0565-4/4
K4067
A0565
2SK4067
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2SJ664
Abstract: No abstract text available
Text: 2SJ664 Ordering number : EN8589 P-Channel Silicon MOSFET 2SJ664 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.
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2SJ664
EN8589
2SJ664
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2SJ659
Abstract: No abstract text available
Text: 2SJ659 Ordering number : EN8584A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ659 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter.
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2SJ659
EN8584A
2SJ659
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J652
Abstract: No abstract text available
Text: Ordering number : ENN7625 2SJ652 P-Channl Silicon MOSFET 2SJ652 General-Purpose Switching Device Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. unit : mm 2063A [2SJ652]
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ENN7625
2SJ652
2SJ652]
O-220ML
J652
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Untitled
Abstract: No abstract text available
Text: December 15, 2004 V3 Preliminary ◆Low Power Consumption :35µA TYP. •APPLICATIONS ◆Maximum Output Current :More than 700mA ●CD-ROMs, CD-R / RW drive (800mA limit) ◆Dropout Voltage ●DVD drive :50mV @ 100mA ●HDD drive :100mV @ 200mA ●Cameras, Video recorders
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700mA
800mA
100mA
100mV
200mA
XC6210
ud200408
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN5300A N-Channel Silicon MOSFET 2SK2316 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. • Ultrahigh-speed switching. unit: mm 2062A-PCP • Low-voltage drive 2.5V drive . [2SK2316] 1 : Gate 2 : Drain
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EN5300A
2SK2316
062A-PCP
2SK2316]
250mm2Ã
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MCH3383
Abstract: No abstract text available
Text: MCH3383 Ordering number : EN9000A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH3383 Low Voltage Drive Switching Device Applications Features • • • • ON-resistance RDS on 1=57mΩ (typ.) 0.9V drive Halogen free compliance Protection diode in
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EN9000A
MCH3383
PW10s,
900mm2
MCH3383
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Untitled
Abstract: No abstract text available
Text: RTQ025P02 Transistor 2.5V Drive Pch MOS FET RTQ025P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 zFeatures 1) Low On-resistance.(140mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V) 1.0MAX
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RTQ025P02
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FAN7385
Abstract: FAN7382 FAN7380 Full-bridge LcC resonant converter full-bridge driver 600V FAN7385M FAN7385MX Full-bridge series resonant converter noise canceller fairchild Resonant IC
Text: FAN7385 Dual-Channel High-Side Gate-Drive IC Features Description Floating Channel for Bootstrap Operation to +600V The FAN7385 is a monolithic high side gate drive IC designed for high voltage, high speed driving MOSFETs and IGBTs operating up to +600V.
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FAN7385
350mA/650mA
FAN7385
FAN7382
FAN7380
Full-bridge LcC resonant converter
full-bridge driver 600V
FAN7385M
FAN7385MX
Full-bridge series resonant converter
noise canceller
fairchild Resonant IC
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Untitled
Abstract: No abstract text available
Text: RTL020P02 Transistors 2.5V Drive Pch MOSFET RTL020P02 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Low on-resistance. (180mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) Abbreviated symbol : WU
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RTL020P02
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Untitled
Abstract: No abstract text available
Text: RSR020P03 Transistors 4V Drive Pch MOSFET RSR020P03 zStructure Silicon P-channel MOSFET zDimensions Unit : mm TSMT3 1.0MAX zFeatures 1) Low On-resistance 2) Space saving−small surface mount package (TSMT3) 3) 4V drive 2.9 0.85 0.4 0.7 1.6 2.8 (3) 0.3~0.6
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RSR020P03
R1102A
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TD350E
Abstract: schematic diagram UPS active power 600 schematic diagram UPS 600 Power free desaturation design 3 phase MOSFET INVERTER motor schematic diagram UPS active power easy 400
Text: TD350E Advanced IGBT/MOSFET driver Features • 1.5 A source/2.3 A sink typ gate drive ■ Active Miller clamp feature ■ Two steps turn-off with adjustable level and delay ■ Desaturation detection ■ Fault status output ■ Negative gate drive ability
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TD350E
TD350E
schematic diagram UPS active power 600
schematic diagram UPS 600 Power free
desaturation design
3 phase MOSFET INVERTER motor
schematic diagram UPS active power easy 400
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Untitled
Abstract: No abstract text available
Text: MTM761100LBF MTM761100LBF Silicon P-channel MOSFET Unit: mm For switching MTM23110 in WSMini6 type package Features y Low Drain-source On-state Resistance:RDS on typ = 30 mΩ （VGS = -4.0 V) y Low drive voltage: 1.8 V drive y Halogen-free / RoHS compliant
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MTM761100LBF
MTM23110
UL-94
MTM761100LBF
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Untitled
Abstract: No abstract text available
Text: RTQ030P02 Transistor 2.5V Drive Pch MOS FET RTQ030P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low On-resistance.(110mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V)
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RTQ030P02
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td 2003 ap
Abstract: H7N1004LD H7N1004LM H7N1004LS
Text: H7N1004LD, H7N1004LS, H7N1004LM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0072-0600Z Previous ADE-208-1552E(Z Rev.6.00 Aug.27.2003 Features • • • • Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive
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H7N1004LD,
H7N1004LS,
H7N1004LM
REJ03G0072-0600Z
ADE-208-1552E
H7N1004LS
H7N1004LD
td 2003 ap
H7N1004LD
H7N1004LM
H7N1004LS
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IRF2807
Abstract: irf2807 equivalent A3946 A3946KLBTR A3946KLPTR A3946KLPTR-T AEC-Q100-002 MS-013
Text: A3946 Half-Bridge Power MOSFET Controller Features and Benefits Description ▪ On-chip charge pump for 7 V minimum input supply voltage ▪ High-current gate drive for driving a wide range of N-channel MOSFETs ▪ Bootstrapped gate drive with top-off charge pump
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A3946
A3946
IRF2807
irf2807 equivalent
A3946KLBTR
A3946KLPTR
A3946KLPTR-T
AEC-Q100-002
MS-013
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9918GH
Abstract: AP9918GH marking codes transistors SSs
Text: AP9918GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low drive current N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID D 20V 14mΩ 45A G ▼ Surface mount package S Description
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AP9918GH/J
O-252
O-251
O-251
9918GJ
9918GH
AP9918GH
marking codes transistors SSs
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9452 sot-89
Abstract: mosfet 9452 gs 9452 9452 marking code CODE 9452 SOT-89 9452 mosfet AP9452GG-HF
Text: AP9452GG-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower gate charge D ▼ Capable of 2.5V gate drive ▼ Single Drive Requirement BVDSS 20V RDS ON 50mΩ ID G ▼ RoHS Compliant 4A S Description D
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AP9452GG-HF
OT-89
9452 sot-89
mosfet 9452
gs 9452
9452 marking code
CODE 9452 SOT-89
9452 mosfet
AP9452GG-HF
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k3067
Abstract: 15-V TPS2838 TPS2839 TPS2848 TPS2849
Text: TPS2838, TPS2839 TPS2848, TPS2849 ą SLVS367A – MARCH 2001 – REVISED JUNE 2001 SYNCHRONOUSĆBUCK MOSFET DRIVERS WITH DRIVE REGULATOR FEATURES D Integrated Drive Regulator 4 V to 14 V D Adjustable/Adaptive Dead-Time Control D 4-A Peak current at VDRV of 14 V
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TPS2838,
TPS2839
TPS2848,
TPS2849
SLVS367A
k3067
15-V
TPS2838
TPS2839
TPS2848
TPS2849
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P08A
Abstract: int100s
Text: INT201 High-side Driver IC Floating Inputs Floating High-side Drive POWER INTEGRATIONS, INC. Product Highlights Floating Control Inputs • Connects directly to INT200 or INT202 HSD outputs • No external level translators or transformers required Gate Drive Output for an External MOSFET
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INT201
INT200
INT202
sink/150
INT201
SO-16
SO-20
P08A
int100s
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