DRF100 FOR LOW POWER OUTPUT POWER Search Results

drf100

Contextual Info: DRF100 15V, 8A, 30MHz MOSFET Driver Hybrid The DRF100 is a High-Speed Power MOSFET driver with a unique anti-ring function. It is intended to drive the gate of a power MOSFET with ≥3nF gate capacitance to 15V at frequencies up to 30MHz. It can produce output currents ≥8A RMS, while dissipating 60W. The Driver

drf100

Contextual Info: DRF100 15V, 8A, 30MHz MOSFET Driver Hybrid The DRF100 is a High-Speed Power MOSFET driver with a unique anti-ring function. It is intended to drive the gate of a power MOSFET with ≥3nF gate capacitance to 15V at frequencies up to 30MHz. It can produce output currents ≥8A RMS, while dissipating 60W. The Driver

hf amplifier 100w

Abstract: DFR100 high speed mosfet driver 3NF 06 drf100 for low power output power ultrasound transducer circuit driver ultrasound transducer high power driver DRF100
Contextual Info: DRF100 15V, 8A, 30MHz High Speed MOSFET Driver The DRF100 is a High-Speed Power MOSFET driver with a unique anti-ring function. It is intended to drive the gate of a power MOSFET ≥3nF, gate capacitance to an 18V maximum, at frequencies up to 30MHz. It can produce output currents ≥8A RMS, while

Contextual Info: DRF100 15V, 8A, 30MHz High Speed MOSFET Driver The DRF100 is a High-Speed Power MOSFET driver with a unique anti-ring function. It is intended to drive the gate of a power MOSFET ≥3nF, gate capacitance to an 18V maximum, at frequencies up to 30MHz. It can produce output currents ≥8A RMS, while

drf100

Abstract: drf100 for low power output power
Contextual Info: DRF100 PRELIMINARY 15V, 8A, 30MHz MOSFET Driver Hybrid The DRF100 is a High-Speed Power MOSFET driver with a unique anti-ring function. It is intended to drive the gate of a power MOSFET with ≥3nF gate capacitance to 15V at frequencies up to 30MHz. It can

drf100

Abstract: drf100 for low power output power internal circuit diagram of choke
Contextual Info: DRF100 Evaluation Board Figure 1 shows a simplified circuit diagram for the DRF100. The Hybrid consists of a MOSFET Driver and six internal bypass capacitors. These capacitors provide highspeed local bypassing for improved switching speed. The control signal is applied to the

DRF200G

Abstract: DRF100 DRF200 ultrasound transducer
Contextual Info: DRF200G 15V, 8A, 30MHz MOSFET Driver The DRF200 is a High-Speed Power MOSFET driver with a unique anti-ring function. It is intended to drive the gate of a power MOSFET with ≥3nF gate capacitance to 15V at frequencies up to 15MHz. It can produce output currents ≥8A RMS, while

diode sg 55

Abstract: drf100 DRF200 DRF200G 30mhz mosfet driver
Contextual Info: DRF200G 15V, 8A, 30MHz MOSFET Driver The DRF200 is a High-Speed Power MOSFET driver with a unique anti-ring function. It is intended to drive the gate of a power MOSFET with ≥3nF gate capacitance to 15V at frequencies up to 15MHz. It can produce output currents ≥8A RMS, while

DRF1300

Abstract: DRF1301
Contextual Info: DRF1301 1000V, 15A, 30MHz MOSFET Push-Pull Hybrid The DRF1301 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered cost over a non-integrated solution. This low parasitic approach, coupled

DRF1300

Contextual Info: DRF1300 G 500V, 30A, 30MHz MOSFET Push-Pull Hybrid IN The DRF1300 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered cost

DRF1300

Abstract: drf100 d 434 mosfet
Contextual Info: DRF1300 500V, 30A, 30MHz MOSFET Push-Pull Hybrid IN The DRF1300 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered cost over a non-integrated solution. This low parasitic approach, coupled

Contextual Info: DRF1300 500V, 30A, 30MHz MOSFET Push-Pull Hybrid IN The DRF1300 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered cost over a non-integrated solution. This low parasitic approach, coupled

DRF1300

Abstract: "RF MOSFETs" ultrasound transducer circuit driver ultrasound transducer high power driver RF MOSFET Driver drf100 drf100 for low power output power full bridge high speed mosfet driver
Contextual Info: DRF1300 PRELIMINARY 500V, 30A, 30MHz MOSFET Half Bridge Hybrid The DRF1300 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered cost over a non-integrated solution. This low parasitic

Contextual Info: DRF1301 1000V, 15A, 30MHz MOSFET Push-Pull Hybrid The DRF1301 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered cost over a non-integrated solution. This low parasitic approach, coupled

DRF1300

Abstract: drf100 d 434 mosfet
Contextual Info: DRF1300 500V, 30A, 30MHz MOSFET Push-Pull Hybrid The DRF1300 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered cost over a non-integrated solution. This low parasitic approach, coupled

Contextual Info: DRF1301 PRELIMINARY 1000V, 15A, 30MHz MOSFET Push-Pull Hybrid The DRF1301 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered cost

PUSH PULL MOSFET DRIVER

Contextual Info: DRF1300 PRELIMINARY 500V, 30A, 30MHz MOSFET Push-Pull Hybrid The DRF1300 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered cost

drf1400

Abstract: microsemi drf1400
Contextual Info: DRF1400 500V, 30A, 30MHz MOSFET Half Bridge Hybrid The DRF1400 is a half bridge hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance and lowered cost over a non-integrated solution. This low parasitic approach, coupled

DRF1300

Abstract: DRF1301 DRF100 microsemi mosfet 1000V
Contextual Info: DRF1301 1000V, 15A, 30MHz MOSFET Push-Pull Hybrid The DRF1301 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered cost over a non-integrated solution. This low parasitic approach, coupled

Contextual Info: DRF1300 PRELIMINARY 500V, 30A, 30MHz MOSFET Push-Pull Hybrid The DRF1300 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered cost

smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
Contextual Info: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain

sot-227 footprint

Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
Contextual Info: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.