TC5117405
Abstract: BST60
Text: TOSHIBA T C 5 1 1 7 4 0 5 B S J / B S T -6 0 / 7 0 PRELIMINARY 4,194,304 WORD X 4 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5117405BSJ/BST is the hyper page (EDO) dynamic RAM organized 4,194,304 word by 4 bits. The TC5117405BSJ/ BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat
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TC5117405BSJ/BST
TC5117405BSJ/
300mil)
TC5117405BSJ/BST-60/70
DR16070295
TC5117405
BST60
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BST60
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5117405BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5117405BSJ/BST is the hyper page (EDO) dynamic RAM organized 4,194,304 word by 4 bits. The TC5117405BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
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OCR Scan
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PDF
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TC5117405BSJ/BST-60/70
TC5117405BSJ/BST
TC5117405BSJ/BST
300mil)
DR16070295
SOJ26-P-300C)
BST60
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