DQ91 Search Results

Contextual Info: STI368003 72-PIN SIMMS 8M X 36 BITS DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI368003-60 60ns 15ns 110ns STI368003-70 70ns 20ns 130ns • Fast Page Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability

Contextual Info: STI721005D1 -xxVG 168-PIN DIMMS 1M X 72 Bit DRAM DIMM with FPM and ECC Optimized FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC *RC *PC STI.-60VG 60ns 20ns 110ns 40ns STI.-70VG 70ns 25ns 130ns 45ns The Simple Technology STI721005D1-xxVG is a 1M x 72 bit

Contextual Info: New Products MB82DPS02183B Cellular Phone Application Specific RAM TM Mobile FCRAM with High-Speed Page Mode MB82DPS02183B A further enhanced Mobile FCRAM featuring a high-speed page mode, a 1.8V power supply operation. Introduction Photo 1 External View

ACT-D16M96S

Abstract: BSA1 BS-B1
Contextual Info: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module May 29, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM

Contextual Info: IBM041841RLAD IBM043641RLAD Preliminary 128K x 36 & 256K x 18 SRAM Features • 128K x 36 or 256K x 18 Organizations • Registered Addresses, W rite Enables, Synchro­ nous Select and Data Ins • CMOS Technology • Synchronous Pipeline Mode Of Operation with

HYM536100M

Contextual Info: 'HYUNDAI SEMICONDUCTOR HYM536100 Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536100 Is a 1M x 36-bit Fast page mode CMOS ORAM module consisting of eight HY514400 and four HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted

Contextual Info: IBM041841RLAA IBM043641RLAA Preliminary 128K X 36 & 256K X 18 SRAM Features • 128K x 36 or 256K x 18 Organizations • Registered Outputs • CMOS Technolgy • Asynchronous Output Enable and Power Down Inputs • Synchronous Pipeline Mode Of Operation with

Contextual Info: •HYUNDAI H Y 6 7 V 1 8 1 0 0 /1 0 1 64K X 18 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst ad­ dress counter and pipelined output. All synchronous inputs pass through registers controlled by a positiveedge triggered clock K .

F0110

Abstract: 004C2000
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE5.0E MEMORY Mobile FCRAM CMOS 16M Bit 1M word x 16 bit Mobile Phone Application Specific Memory MB82D01161-85/-85L/-90/90L CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface •

EDI4164MEV50SM

Abstract: EDI4164MEV-RP EDI4164MEV60SM EDI4164MEV70SM 4mx16 edo EDI4164MEV50SI
Contextual Info: EDI4164MEV-RP HI-RELIABILITY PRODUCT 4Mx16 EDO Extended Data Out Dynamic RAM 3.3V FEATURES • 4 Meg x 16 bit CMOS Dynamic RAM ■ RAS - Only, CAS-before-RAS, and HIDDEN refresh capability ■ Package: ■ Low Operating Power Dissipation ■ Access Time: 50, 60 and 70ns

71WS256NC0BAIAU

Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics

256mb ddr333 200 pin

Abstract: A11 MARKING CODE mark DM 8M16 DDR200 DDR266 DDR333 MT46V16M8 MT46V32M4 MT46V8M16
Contextual Info: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks MT46V8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds

Contextual Info: UG34C322 4 4GTG 16M Bytes (4M x 32) DRAM 72Pin SODIMM based on 4M X 4 Features General Description The UG34C322(4)4GTG is a 4,149,304 bits by 32 SODIMM module.The UG34C322(4)4GTG is assembled using 8 pcs of 4M x 4 2K/4K refresh DRAMs in 24-pin TSOP package mounted on a 72pin printed circuit board.

Contextual Info: December 1993 Edition 1.0 FUpSU DATA SHEET M B 9 8 B 7 5 14-80 DRAM MEMORY CARD DYNAMIC RANDOM ACCESS MEMORY CARD 4M x 18 bits / 2M x 36 bits The Fujitsu MB98B7514 is a Dynamic Random Access Memory DRAM card consisting of sixteen MB814400AL devices and eight MB81C1000AL devices.

MB85323A-70

Contextual Info: September 1993 Edition 1.0 FUJITSU DATA SHEET MB85323A-60/-70/-80 CMOS 1 M x 36 Fast Page Mode DRAM Module CMOS 1,024,576 x 36 Bit Fast Page Mode DRAM Module «ft* * * 11 The Fujitsu MB85323A is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB814400A devices and four MB81C1000A

Contextual Info: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM FEATURES DESCRIPTION  Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs

Contextual Info: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM – External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION  Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array constructed with

DQ111

Abstract: DQ139 DQ131
Contextual Info: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply

GS840NBT36PT

Abstract: R33V TI r33v
Contextual Info: Preliminary - April 1998 ¡tl TUUNOIOCV 2.5V or 3.3V I/O 143/133/117/100 GS840NBT36PT F eatures 3.3V +\Q%/-5% Core power supply, 2.5V or 3.3V I/O supply Output registers are provided and are controlled by FT mode pin. With FT mode pin, output registers can be programmed in either

ite 8892

Abstract: MB8532 MB85323A-70
Contextual Info: September 1993 Edition 2.0 FUJITSU DATA SHEET'- M B 85323A -60/-70/-80 CMOS 1Mx 36 Fast Page Mode DRAM Module CMOS 1,024,576 x 32 Bit Fast Page Mode DRAM Module The Fujitsu MB85323-A is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB814400A devices and four

junction temperature v850

Contextual Info: Preliminary - April 1998 ¡il T t d l N O L O C V 2.5V or 3.3V I/O 117/100/90/50 GS840NBT18FT F eatures Output registers are provided and are controlled by FT mode pin. With FT mode pin, output registers can be programmed in either pipeline mode for very high frequency operation (117MHz or

Contextual Info: ¡il TU4IHDLDCV GS82032Q/T 138/133/117/100/66,3.3V gs82032Q r C A li V U H H \ À 0 0 O fc P U l O l Features • • • • • • • • • • Single 3.3V +10%/-5% power supply High frequency operation: 138MHz Fast access time: 4ns Clock to Q FT mode pin for either flow-thru or pipeline operation

Contextual Info: IS61NF12832 IS61NF12836 IS61NF25618 IS61NLF12832 IS61NLF12836 IS61NLF25618 128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH 'NO WAIT' STATE BUS SRAM ISSI PRELIMINARY INFORMATION MAY 2002 FEATURES DESCRIPTION • • • • • • The 4 Meg 'NF' product family feature high-speed,

DQ111

Contextual Info: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com