DQ15 DISCRETE Search Results

Contextual Info: DS1757Y PRODUCT PREVIEW DS1757Y 3V Partitionable 128K X 16 NV SRAM FEATURES PIN ASSIGNMENT • 2,097,152 bit static RAM organized as 131,072 words PFO 1 40 VCC CE 2 39 WE year minimum data retention in the absence of power DQ15 3 38 A16 DQ14 4 37 A15 • Selectively write protects blocks of memory through

Contextual Info: DS1258V/AB DALLAS SEMICONDUCTOR DS1258Y/AB 128K x 16 Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 year minimum data retention in the absence of external power CEU 1 1 CEL 1 2 DQ15 1 3 DQ14 1 4 • Data is automatically protected during a power loss • Separate upper byte and lower byte chip select inputs

Contextual Info: DS1258Y/AB P R O D U C T P R EVIEW DALLAS DS1258Y/AB 128K x 16 Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 year minimum data retention in the absence of external power CEU CEL DQ15 DQ14 1 1 1 1 DQ13 1 DQ12 • DQ11 1 • Data is automatically protected during a power loss

Contextual Info: DS1656Y/AB DALLAS SEMICONDUCTOR DS1658Y/AB Partitionable 128K x 16 NV SRAM FEATURES PIN ASSIGNMENT • 10 year minimum data retention in the absence of external power 40 CËÜ 1 1 CËL 1 2 DQ15 1 3 DQ14 1 4 DQ13 1 5 • Data is automatically protected during power loss

DS1258AB

Abstract: DS1258Y
Contextual Info: DS1258Y/A8 DALLAS SEMICONDUCTOR DS1258Y/AB 128K x 16 Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 year minimum data retention in the absence of external power CEU 1 1 CEL 1 2 DQ15 1 3 DQ14 1 4 • Data is automatically protected during a power loss • Separate upper byte and lower byte chip select inputs

DS1658AB

Abstract: DS1658Y
Contextual Info: DALLAS s e m ic o n d u c to r DS1658Y/AB Partitionable 128K x 16 NV SRAM FEATURES PIN ASSIGNMENT • 10 year minimum data retention in the absence of external power 40 CËÜ 1 1 CËL 1 2 DQ15 1 3 DQ14 1 4 DQ13 1 5 • Data is automatically protected during power loss

Contextual Info: DS1258Y/AB PRODUCT PREVIEW D A L L A S D S 1 2 5 8 Y /A B 128K x 16 Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • 10 year minimum data retention in the absence of external power 1 1 CEL 1 2 40 1 Vcc 39 1 WE DQ15 1 3 DQ14 1 4 38 1 A16

HM5212165DTD-B60

Abstract: HM5225165ATT-A6 HM5264165TT-B60 SH7708R SH7709a HM5264165-B60 SH7709 SH7729 HM5264165TTB60 HM5212165D-B60
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: E PRELIMINARY 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B n n n n n n n n n Intel SmartVoltage Technology  5V or 12V Program/Erase  3.3V or 5V Read Operation  Increased Programming Throughput

intel 28F200

Abstract: 56-Lead TSOP Package E28F200CVB60 e28f200cv-b60 29053 TB28F200BVT80
Contextual Info: E PRELIMINARY 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B Intel SmartVoltage Technology  5V or 12V Program/Erase  3.3V or 5V Read Operation  Increased Programming Throughput at 12V VPP

intel 28F400

Contextual Info: E SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B n n n n n n n Intel SmartVoltage Technology  5 V or 12 V Program/Erase  3.3 V or 5 V Read Operation Very High-Performance Read

29053

Abstract: intel pa28f800
Contextual Info: jr% + I ra UJ©T [PF3EW0II 8-Mbit 512K X 1 6 ,1M X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — 60% Faster Typical Programming at 12V VPP ■ Very High Performance Read

transistor c124 esn

Abstract: transistor SA235 S71NS064NA0
Contextual Info: S71NS128NA0/S71NS064NA0 Based MCPs Stacked Multi-Chip Product MCP MirrorBit Flash Memory and PSRAM 128 Mb (8M x 16-bit) and 64 Mb (4M x 16-Bit), 110 nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/ Write, Burst Mode Flash Memory with 16 Mb (1M x 16-Bit) PSRAM

Contextual Info: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.

Contextual Info: White Electronic Designs 8Mx72 Synchronous DRAM WEDPN8M72V-133BC PRELIMINARY* FEATURES GENERAL DESCRIPTION n High Frequency = 133MHz, 125MHz and 100MHz n Package: The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728

mh2s64cxjj10

Contextual Info: Preliminary Spec. Some contents are subject to change without notice. MITSUBISHI LSIs MH2S64CXJJ-10,-12,-15 134217728-BIT 2097152-WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH2S64CXJJ is 2097152-word by 64-bit Synchronous DRAM module. This consists of eight

Contextual Info: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.

Contextual Info: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with

Contextual Info: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.

Contextual Info: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a

Contextual Info: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with

Contextual Info: WEDPN16M72V-XBX HI-RELIABILITY PRODUCT 16Mx72 Synchronous DRAM *ADVANCED FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with

WEDPN

Contextual Info: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz* The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.

Contextual Info: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with