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2SK619 Abstract: J10V diode gate Text: 2SK 619 blE D 44TbE0S 0013103 bib • HITH HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET it rT HIGH FREQUENCY HIGH IMPEDANCE AMPLIFIER ì h ■ FEATURES • • High Voltage (VDSS - 70 V) Effective to Suppress Signal Radiation Connected Source to Heat Sink	OCR Scan	PDF	2SK619 44TbE0S Q0131 441b205 DQ131GS 2SK619 J10V diode gate

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2SK619

Abstract: J10V diode gate
Text: 2SK 619 blE D 44TbE0S 0013103 bib • HITH HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET it rT HIGH FREQUENCY HIGH IMPEDANCE AMPLIFIER ì h ■ FEATURES • • High Voltage (VDSS - 70 V) Effective to Suppress Signal Radiation Connected Source to Heat Sink

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2SK619 44TbE0S Q0131 441b205 DQ131GS 2SK619 J10V diode gate