2SJ387
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
|
PDF
|
LM2981
Abstract: LM8117 lm2982 as2805 AS2936 LM2980 SOT-25 lm2980aim5x-x.x AMS1117 AME8807AEHA
Text: Cross Reference Competition Part Number AME Parts Package Pin to Pin Functions Remarks Champion NS NS ON Semiconductor CM2830 LM1117T-xx LM1117DTX-xx NCP5426xxxx AME8811 AME1117xCBT AME1117xCCT AME8832AEIVxxx SOT-89 TO-220 TO-252 SOT-25 þ þ þ ¨ ¨ ¨ ¨
|
Original
|
CM2830
LM1117T-xx
LM1117DTX-xx
NCP5426xxxx
AME8811
AME1117xCBT
AME1117xCCT
AME8832AEIVxxx
OT-89
O-220
LM2981
LM8117
lm2982
as2805
AS2936
LM2980
SOT-25
lm2980aim5x-x.x
AMS1117
AME8807AEHA
|
PDF
|
2SJ388S
Abstract: Hitachi 2SJ Hitachi DSA001651
Text: 2SJ388 L , 2SJ388(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter
|
Original
|
2SJ388
D-85622
2SJ388S
Hitachi 2SJ
Hitachi DSA001651
|
PDF
|
H7N0603DL
Abstract: H7N0603DS td 2003 ap A120A
Text: H7N0603DL, H7N0603DS Silicon N Channel MOS FET High speed power Switching REJ03G0123-0100Z Rev.1.00 Oct.14.2003 Features • Low on - resistance RDS on = 11 mΩ typ. • Low drive current • Capable of 4.5 gate drive Outline DPAK-2 D DPAK-S 4 4 G 1 2 3
|
Original
|
H7N0603DL,
H7N0603DS
REJ03G0123-0100Z
H7N0603DL
H7L0603DS
H7N0603DL
H7N0603DS
td 2003 ap
A120A
|
PDF
|
Hitachi DSA00276
Abstract: No abstract text available
Text: 2SK2329 L , 2SK2329(S) Silicon N-Channel MOS FET ADE-208-1356 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source
|
Original
|
2SK2329
ADE-208-1356
D-85622
Hitachi DSA00276
|
PDF
|
2sk 4207
Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Text: CONTENTS Index . 5 General Information . 9
|
Original
|
D-85622
2sk 4207
2SK176
2SK975 equivalent
2SJ177
2SJ318
PM45502C
2SK2225
2sk1058 2SJ162
pwm 100w audio amplifier
2SK1336 equivalent
|
PDF
|
TRANSISTOR LWW 20
Abstract: a8811 rt 8800b TRANSISTOR SOT-23 marking JE TRANSISTOR LWW 31 8800S 0c sot-89 O A B C sot-89 TRANSISTOR D 2627 TRANSISTOR LWW 17
Text: AME, Inc. AME8800 / 8811 300mA CMOS LDO n General Description n Features The AME8800/8811 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications. The space-saving SOT-23, SOT-25, SOT-89 and
|
Original
|
AME8800
300mA
AME8800/8811
OT-23,
OT-25,
OT-89
2006-DS8800/8811-F
TRANSISTOR LWW 20
a8811
rt 8800b
TRANSISTOR SOT-23 marking JE
TRANSISTOR LWW 31
8800S
0c sot-89
O A B C sot-89
TRANSISTOR D 2627
TRANSISTOR LWW 17
|
PDF
|
HAF1004
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
TRANSISTOR a8800
Abstract: a8800 a8811 AME8800AEETY AME8800LEFT AME8800EEFT DS8800 AME8800 AME8800DEFT AME8800AEETZ
Text: AME, Inc. 300mA CMOS LDO AME8800 / 8811 n General Description n Functional Block Diagram The AME8800/8811 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications.
|
Original
|
300mA
AME8800
AME8800/8811
OT-23,
OT-25,
OT-89
2006-DS8800/8811-M
TRANSISTOR a8800
a8800
a8811
AME8800AEETY
AME8800LEFT
AME8800EEFT
DS8800
AME8800DEFT
AME8800AEETZ
|
PDF
|
HAF1004
Abstract: ADE-208-629B
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
D-85622
D-85619
HAF1004
ADE-208-629B
|
PDF
|
BECS330
Abstract: AME8815AEBT330 sot223, 31 AME 385 transistor 8815A AEBT330 amplifier 2606 AEBT150 AEBT250 AEBT500
Text: AME, Inc. 1.5A CMOS LDO AME8815 n General Description n Functional Block Diagram The AME8815 family of linear regulators feature low quiescent current 45µA typ. with low dropout voltage, making them ideal for battery applications. It is available in D2PAK and TO-220 packages. The space-efficient
|
Original
|
AME8815
AME8815
O-220
OT-223
2013-DS8815-K
BECS330
AME8815AEBT330
sot223, 31
AME 385 transistor
8815A
AEBT330
amplifier 2606
AEBT150
AEBT250
AEBT500
|
PDF
|
2SK3274
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
|
PDF
|
AME1117CCCT
Abstract: AME1117ACCT AME1117CCGT AME1117DCCT AME1117DCGT AME1117 AME1117ACBT AME1117ACGT AME1117BCCT AME1117BCGT
Text: AME, Inc. 1A Low Dropout Positive Voltage Regulator AME1117 ! General Description The AME1117 is a 1A low-dropout positive voltage regulator. It is available in fixed and adjustable output voltage versions. Overcurrent and thermal protection are integrated onto the chip. Output current will limit as while it
|
Original
|
AME1117
AME1117
1014-DS1117-H
AME1117CCCT
AME1117ACCT
AME1117CCGT
AME1117DCCT
AME1117DCGT
AME1117ACBT
AME1117ACGT
AME1117BCCT
AME1117BCGT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AME, Inc. 1A Low Dropout Positive Voltage Regulator AME1117 n General Description n Functional Block Diagram The AME1117 is a 1A low-dropout positive voltage regulator. It is available in fixed and adjustable output voltage versions. Overcurrent and thermal protection are integrated onto the chip. Output current will limit as while it
|
Original
|
AME1117
AME1117
1014-DS1117-P
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: AME, Inc. 1A Low Dropout Positive Voltage Regulator AME1117 n General Description n Functional Block Diagram The AME1117 is a 1A low-dropout positive voltage regulator. It is available in fixed and adjustable output voltage versions. Overcurrent and thermal protection are integrated onto the chip. Output current will limit as while it
|
Original
|
AME1117
AME1117
1014-DS1117-N
|
PDF
|
HAF2025-90STL
Abstract: HAF2025-90S HAF2025-90STR HAF2025S
Text: HAF2025 L , HAF2025(S) Silicon N Channel Power MOS FET Power Switching REJ03G0145-0300Z Rev.3.00 Apr.22.2004 Descriptions This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of
|
Original
|
HAF2025
REJ03G0145-0300Z
HAF2025-90STL
HAF2025-90S
HAF2025-90STR
HAF2025S
|
PDF
|
H5N2004DL
Abstract: H5N2004DS
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
|
PDF
|
Hitachi DSA0076
Abstract: H5N2510DL H5N2510DS Silicon N Channel MOS FET High Speed Power Switching dpak code
Text: H5N2510DL, H5N2510DS Silicon N Channel MOS FET High Speed Power Switching ADE-208-1379 Z Target Specification 1st. Edition Mar. 2001 Features • Low on-resistance • Low drive current • High speed switching Outline DPAK-2 4 4 1 2 D 3 H5N2510DS G 1 2
|
Original
|
H5N2510DL,
H5N2510DS
ADE-208-1379
H5N2510DL
Hitachi DSA0076
H5N2510DL
H5N2510DS
Silicon N Channel MOS FET High Speed Power Switching
dpak code
|
PDF
|
Hitachi DSA0076
Abstract: H5N2505DL H5N2505DS Silicon N Channel MOS FET High Speed Power Switching dpak code
Text: H5N2505DL, H5N2505DS Silicon N Channel MOS FET High Speed Power Switching ADE-208-1376 Z Target Specification 1st. Edition Mar. 2001 Features • Low on-resistance • Low drive current • High speed switching Outline DPAK-2 4 4 1 2 D 3 H5N2505DS G 1 2
|
Original
|
H5N2505DL,
H5N2505DS
ADE-208-1376
H5N2505DL
Hitachi DSA0076
H5N2505DL
H5N2505DS
Silicon N Channel MOS FET High Speed Power Switching
dpak code
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK3147 L ,2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI 1st. Edition February 1999 Features • Low on-resistance • • Rds = 0.1 Q. typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline DPAK-2 II
|
OCR Scan
|
2SK3147
|
PDF
|
2SK2334
Abstract: No abstract text available
Text: 2SK2334 L , 2SK2334(S) Silicon N-Channel MOS FET HITACHI ADE-208-385 1st. Edition Application H igh speed pow er sw itching Features • • • • • • Low on-resistance H igh speed sw itching Low drive current 4 V gate drive d evice can be driven from 5 V source
|
OCR Scan
|
2SK2334
ADE-208-385
|
PDF
|
2sj332
Abstract: 2SJ332S
Text: 2SJ332 L , 2SJ332(S) Silicon P-Channel MOS FET HITACHI ADE-208-073 1st. Edition Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source •
|
OCR Scan
|
2SJ332
ADE-208-073
2SJ332S
|
PDF
|
2SJ38
Abstract: No abstract text available
Text: 2SJ387 L , 2SJ387(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter
|
OCR Scan
|
2SJ387
2SJ38
|
PDF
|
APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
|
OCR Scan
|
ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
|
PDF
|