DOUBLE MATCH TRANSISTOR Search Results

MASWGM0002-DIE

Contextual Info: Switch, Single-Pole, Double-Throw 2.0-20.0 GHz MASWGM0002-DIE 903230 — Preliminary Information Features ♦ ♦ ♦ ♦ ♦ 2.0-20.0 GHz Operation 3 dB Insertion Loss TTL Control Excellent Match on Off Port MSAG Process Description The MASWGM0002-Die is a single pole double throw switch

er900

Abstract: capacitor 220 microfarad 220 microfarad capacitor 1N3064 SCELL500 SD1650 CAPACITOR 1000 MICROFARAD capacitor, 1000 microfarad of 1000 microfarad electrolytic capacitor SD1438
Contextual Info: SD1650 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . REFRACTORY/GOLD METALLIZATION DOUBLE STEP INPUT/OUTPUT MATCH 850-960 MHz CLASS AB LINEAR COMMON EMITTER POUT = 60 W MIN. WITH 7 dB MIN GAIN .400 6LFL M169 epoxy sealed ORDER CODE

capacitor 220 microfarad

Abstract: SD1438-02 1 microfarad capacitor 0.1 microfarad capacitor 0.1 microfarad electrolytic capacitor capacitor, 0,1 microfarad 1N3064 SCELL500 SD1650 of 1000 microfarad electrolytic capacitor
Contextual Info: SD1650 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . REFRACTORY/GOLD METALLIZATION DOUBLE STEP INPUT/OUTPUT MATCH 850-960 MHz CLASS AB LINEAR COMMON EMITTER P OUT = 60 W MIN. WITH 7 dB MIN GAIN .400 6LFL M169 epoxy sealed ORDER CODE

F10-S30

Abstract: F10-C11 F10-C10 F10-S15 F10-C15 F10-C16 IEC60529 omron f10-s15
Contextual Info: R F10 Vision Sensor F10 Affordable F10 Vision Sensor with One-Touch Setup Requires No Programming H Ensures fast, accurate inspections such as label pattern match, print verification, label placement, and conformity rejects upside-down, tilted or double labels

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1551 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS Features • • • • • • 850-960 MHz 24 VOLTS POUT = 60 WATTS GP = 7.0 dB MINIMUM DOUBLE STEP INPUT/OUTPUT MATCH

Contextual Info: MS1551 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS Features • • • • • • 850-960 MHz 24 VOLTS POUT = 60 WATTS GP = 7.0 dB MINIMUM DOUBLE STEP INPUT/OUTPUT MATCH COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1551 is designed for 900 MHz cellular radio base station

Contextual Info: Switch, Single-Pole, Double-Throw 2.0—8.0 GHz MASWGM0003-DIE 903231 — Preliminary Information Features ♦ ♦ ♦ ♦ ♦ ♦ 2.0-8.0 GHz Operation 3 dB Insertion Loss Non-Reflective TTL Control Excellent Match on Off Port MSAG Process Description

Design Considerations for BJT Active Mixers

Abstract: Signal mixing NE602 nokia 5300 agilent ads balun diodes 4001 8970B nokia 1662 NE602 equivalent EESof nokia fasb
Contextual Info: Noise in Ring Topology Mixers Rick Poore Agilent EEsof EDA 1 Introduction For a classical double-balanced ring-diode mixer, it is expected that the conversion loss 4–5 dB should match the noise figure. This document explores the formal definition of noise figure and

OMRON F10-C55

Abstract: OMRON F10-C25 omron F10-S30R OMRON F10-S15R C20 OMRON Operation Manual OMRON F10-C20 F10-S15R F10-S50R B500-AL001 F10-S30R
Contextual Info: Pattern Matching Sensor F10 Affordable F10 Vision Sensor with One-Touch Setup, 8-bank memory, and RS-232C/RS-422 Communication H Ensures fast, accurate inspections such as label pattern match, print verification, label placement, and conformity rejects upside-down, tilted or double labels

MASWGM0005-DIE

Contextual Info: Switch, Single-Pole, Double-Throw DC-5.0 GHz MASWGM0005-DIE 903219 — Preliminary Information Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ DC-5.0 GHz Operation 1 dB Insertion Loss 55 dB Isolation Class I ESD TTL Control Excellent Match on Off Port MSAG Process

Contextual Info: /=T S G S -1 H0M S0N ^ 7 # . » » ilL IO T M O t g i S D 1650 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . • . ■ REFRACTORY/GOLD METALLIZATION DOUBLE STEP INPUT/OUTPUT MATCH 850-960 MHz CLASS AB LINEAR COMMON EMITTER P o u t = 60 W MIN. WITH 7 dB MIN GAIN

BFG403W

Abstract: 0805CS Series amplifier 900mhz 0805CS 900MHz LOW NOISE AMPLIFIER WITH THE BFG403W
Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-006 : T.F. Buss : Jan. 6 1997 : P.G. Transistors & Diodes, Development 900MHz LOW NOISE AMPLIFIER WITH THE BFG403W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG403W Double Poly

Philips npo 0805

Abstract: 5Ghz lna transistor datasheet BFG425W 0805CS Series BFG425W APPLICATION philips satellite systems w2 smd transistor 0805CS CMP230 CMP231
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0584 : T.F. Buss : 16-07-97 : P.G. Transistors & Diodes, Development 1.5GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly

power amplifier circuit diagram with pcb layout

Abstract: BFG480W transistor amplifier 3 ghz MGS629 power amplifier circuit diagram with pcb layout 2 BFG400 0805CS TRANSISTOR noise figure measurements philips circuit diagram
Contextual Info: APPLICATION INFORMATION 2.4 GHz low noise amplifier with the BFG480W Philips Semiconductors Application information 2.4 GHz low noise amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W is one of the Philips double polysilicon wideband transistors of the BFG400 series.

L05 SMD

Abstract: w05 smd transistor SMD W05 W05 transistor W05 SMD L6 PHILIPS CMP401 CMP281 CMP263 CMP286
Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-770 : T. Buss : 20-Jan-00 : P.G. Transistors & Diodes, Development 900MHz LOW NOISE AMPLIFIER WITH THE BFG410W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG410W Double Poly

transistor bipolar driver schematic

Abstract: BFG425W RNR-T45-97-B-0787 2Ghz amplifier BFG425 BFG425W APPLICATION b0787
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0787 : T. Buss : 29 Sept 1997 : P.G. Transistors & Diodes, Development 2GHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a frequency f=2GHz.

BFG425W

Abstract: BFG425W APPLICATION RNR-T45-97-B-0686 transistor bipolar driver schematic Z048
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0686 : T. Buss : 22 Aug1997 : P.G. Transistors & Diodes, Development 900MHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a frequency f=900MHz.

BFG425W

Abstract: 900mhz driver amplifier 900mhz DRIVER DESIGN philips c3 RF 900MHz
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0688 : T. Buss : 26 Aug 1997 : P.G. Transistors & Diodes, Development 900MHz DRIVER-AMPLIFIER WITH ENABLE-SWITCH USING THE BFG425W Abstract:

Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-375 : T. Buss : 20 May 1997 : P.G. Transistors & Diodes, Development 2GHz BUFFER-AMPLIFIER WITH THE BFG410W Abstract: This application note contains an example of a Buffer-Amplifier with the new BFG410W Double Poly RFtransistor. The buffer is designed for a frequency f=2GHz. Performance at f=2GHz: Isolation S12~-31dB,

BFG425

Abstract: BFG425W BFG410W TRANSISTOR noise figure measurements 2 GHz LNA RNR-T45-96-B-773
Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-773 : T. Buss : 14-Nov-1996 : P.G. Transistors & Diodes, Development 2GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly

MGS731

Abstract: BFG480W MGS732 0805CS BP317
Contextual Info: APPLICATION INFORMATION 900 MHz low noise amplifier with the BFG480W Philips Semiconductors 900 MHz low noise amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400W series.

solenoid injector

Abstract: AN2933 MLRB TBS-B
Contextual Info: Freescale Semiconductor Application Note AN2933 Rev. 0, 12/2004 Understanding the eTPU Channel Hardware by: Mike Pauwels TECD Systems Engineer This is one of a series of application notes intended to help the microcontroller systems engineer to design and

BFG480W

Abstract: 0805CS BP317
Contextual Info: APPLICATION INFORMATION 2 GHz low noise amplifier with the BFG480W Philips Semiconductors 2 GHz low noise amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400W series.

diplexer

Contextual Info: /Inoren Part III Application Information and Technical Data Page Hybrid Couplers. Power Dividers. Input Match and Power Relationships 90° Hybrids For Transistor Power Amplifiers