DOUBLE INT-A-PAK PACKAGE Search Results

Contextual Info: VISHAY SEMICONDUCTORS www.vishay.com Modules Application Note Mounting Instructions for Double INT-A-PAK Modules Vishay Semiconductor Italiana This application note introduces Vishay´s Double INT-A-PAK DIAP modules. It covers their key features and gives instructions for using heatsinks with the modules.

ST T4 3560

Abstract: T2 AL 250V 150Vt GA600HD25S
Contextual Info: PD - 94341 GA600HD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DOUBLE INT-A-Pak Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package

IGBT DRIVE 50V 300A

Abstract: LTA 902 GA600GD25S AK 1262 igbt "internal thermistor" int-a-pak
Contextual Info: PD -50071B GA600GD25S SINGLE SWITCH IGBT DOUBLE INT-A-PAK StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package

GA600GD25S

Abstract: CGC SWITCH OF IGBT 1000A 1000V
Contextual Info: PD - 50071A PRELIMINARY GA600GD25S SINGLE SWITCH IGBT DOUBLE INT-A-PAK StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package

Contextual Info: Provisional Datasheet PD-9.1195 bitemational iôhRectifier IRGDDN300K06 IRGRDN300K06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 600V lc =300A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses

IRF 902

Abstract: GA600GD25S LTA 902 RG2 DIODE 50071 555 ic IC 555 RT25
Contextual Info: PD -50071 PRELIMINARY SINGLE SWITCH IGBT DOUBLE INT-A-PAK GA600GD25S StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package

C451

Contextual Info: International iqrIRectifier Provisional Data Sheet PD-9.1174 IRGDDN300M06 IRGRDN300M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 300A • Rugged Design • Simple gate-drive • Switching-Loss Rating includes all "tail"

IRGDDN400M06

Abstract: c454 INTAPAK package mosfet 400a
Contextual Info: International ^Rectifier Provisional Data Sheet PD-9.1175 IRGDDN400M06 IRGRDN400M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 400A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail" losses

IRGDDN600K06

Abstract: mosfet 600V 600A circuit power mosfet 600v 600A lm 2604 vqe 208 e
Contextual Info: International Provisional Data Sheet PD-9.1197 IRGDDN600K06 1RGRDN600K06 ^R ectifier "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail* losses

DOUBLE INT-A-PAK Package

Contextual Info: Provisional Data Sheet PD-9.1176 International ^Rectifier IRG DDN600M06 IRG RDN600M06 “SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A .Rugged Design •Simple gate-drive • Switching-Loss Rating includes all “tail"

IRGDDN400K06

Abstract: power diode 400A VQE 11 400A mosfet vqe 13
Contextual Info: Provisional Data Sheet PD-9.1196 bitemational ïôHRectifier IRGDDN400K06 IRGRDN400K06 Low conduction loss IGBT "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK VCE= 600V lc = 400A •Rugged Design •Sim ple gate-drive .Switching-Loss Rating includes all ‘tail" losses

mosfet ir 840

Abstract: irgddn400k06 OF IGBT 300A 500V 400A mosfet
Contextual Info: International g ! Rectifier Provisional Data Sheet PD-9.1196 IRGDDN400K06 IRGRDN400K06 Low conduction loss IGBT "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK VCE = 600V lc = 400A • Rugged Design .Simple gate-drive •Switching-Loss Rating includes all "tail" losses

C1019

Abstract: 200a 300v mosfet
Contextual Info: International [xôrIRectifier Provisional Data Sheet PD -9.1198 IRGTDN200K06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 200A •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated

transistors c458

Abstract: btm 110 module C458
Contextual Info: International khlRectifier Provisional Data Sheet PD-9.1177 IRGTDN150M06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 600V lc = 150A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated

GA400TD60U

Contextual Info: PD - 5.059B PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

C82 diode

Abstract: C81 diode
Contextual Info: International IOR Rectifier PD - 5.067A GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V CES= 1200V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz

OF IGBT 300A 500V

Abstract: irgddn300m06 IGBT tail time C452 C451
Contextual Info: International Rectifier Provisional Data Sheet PD-9.1174 RG N300M06 RG RDN300M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT . Rugged Design • Simple gate-drive .Switching-Loss Rating includes all "tail“ losses • Short circuit rated

IRGDDN400M06

Abstract: 400V 400A mosfet
Contextual Info: International iël] Rectifier Provisional Data Sheet PD -9.1175 IRGDDN400M06 IRGRDN400M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK IRGDD. Low conduction loss IGBT IRGRD. VCE = 600V A • Rugged Design • Sim ple gate-drive •Sw itching-Loss Rating includes all “tail"

Contextual Info: International l i i Rectifier PD-9.1171 IRGDDN300M12 IRGRDN300M12 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 1200V lc = 300A • Rugged Design •Simple gate-drive .Switching-Loss Rating includes all "tail" losses .Short circuit rated

GA400TD25S

Contextual Info: PD -50051C GA400TD25S "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses

Contextual Info: International IQ R Rectifier preliminary "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK PD'5051 G A 400TD 25S Standard Speed IGBT Features • Generation 4 IGBT technology V ces = 250V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz

1515G

Abstract: GA250TD120U
Contextual Info: PD - 50054A GA250TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses

200a 300v mosfet

Contextual Info: bitemational Km Rectifier Provisional Data Sheet PD-9.1198 IRGTDN200K06 Low conduction loss IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK V CE = 600V lc = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated

GA250TD120U

Abstract: ic 501
Contextual Info: PD - 5.054 PRELIMINARY GA250TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses