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    DO21 PACKAGE Search Results

    DO21 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    DO21 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSIE1340

    Abstract: varo VARO VF 12 25PW60 SUES706 DS17-04A 4AF4NLV 4af6 motorola 1n3495 SR25B-6S
    Text: SILICON RECTIFIERS, UNDER 1 kV Item Number •o Part Number Manufacturer Max A VRRM IFSM (V) (A) vF Max IF @ (V) IR Test 25 °C @ (A) (A) VR IR Test M @ (A) T2 Test (X) Toper Package Style Max (°C) General-Purpose, lo >= 25 A (Cont'd) 5 10 15 20 25 30


    Original     		PDF R4100325 SR25B6S DD6626 1N1457 1N1196 VTA400 VTA400/S VTA400/T SSIE1340 varo VARO VF 12 25PW60 SUES706 DS17-04A 4AF4NLV 4af6 motorola 1n3495 SR25B-6S

    AEG T 250 N 700

    Abstract: BYW25-800 AEG T 24 N 900 D24N400C DO-208AA D6035J DO-208 TO-218x D4035J FBase-F Package
    Text: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number Manufacturer lo Max VRRM 'FSM vF Max A (V) (A) (V) IF @ Test (A) IR 25 °C (A) VR @ IR @ Test (V) (A) T2 Test (°C) T Op«r Max (°C) Package Style General-Purpose, lo >= 10 A (Cont'd) . . . .5 . .


    Original     		PDF S2140 HSE8064 22GC11 D4035J D4035W S2145 S2150 HSE8065 1N3966 S2160 AEG T 250 N 700 BYW25-800 AEG T 24 N 900 D24N400C DO-208AA D6035J DO-208 TO-218x FBase-F Package

    DO21

    Abstract: DO21 package DO-21 PF2500 PF2501 PF2502 PF2504 PF2506 Diode pressfit
    Text: PF2500 – PF2506 WTE POWER SEMICONDUCTORS Pb 25A 1/2" PRESS-FIT DIODE Features ! Diffused Junction ! Low Leakage A ! Low Cost Anode + ! High Surge Current Capability ! Typical IR less than 5.0µA 


    Original     		PDF PF2500 PF2506 DO-21, PF2502R PF2504R) DO-21 73inaccuracies. DO21 DO21 package DO-21 PF2500 PF2501 PF2502 PF2504 PF2506 Diode pressfit

    Untitled

    Abstract: No abstract text available
    Text: PF2500 – PF2506 WTE POWER SEMICONDUCTORS Pb 25A 1/2" PRESS-FIT DIODE Features  Diffused Junction  Low Leakage A  Low Cost Anode +  High Surge Current Capability  Typical IR less than 5.0µA 


    Original     		PDF PF2500 PF2506 DO-21, PF2502R PF2504R)

    pf7001

    Abstract: PF7004
    Text: PF7000 – PF7006 70A 1/2” PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA A Anode + Mechanical Data       Case: DO-21, Copper Case and Components


    Original     		PDF PF7000 PF7006 DO-21, PF7002R PF7004R) pf7001 PF7004

    Untitled

    Abstract: No abstract text available
    Text: PF3500 – PF3506 35A 1/2” PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA A Anode + Mechanical Data       Case: DO-21, Copper Case and Components


    Original     		PDF PF3500 PF3506 DO-21, PF3502R PF3504R)

    Untitled

    Abstract: No abstract text available
    Text: PF5000 – PF5006 WTE POWER SEMICONDUCTORS Pb 50A 1/2" PRESS-FIT DIODE Features  Diffused Junction  Low Leakage A  Low Cost Anode +  High Surge Current Capability  Typical IR less than 5.0µA 


    Original     		PDF PF5000 PF5006 DO-21, PF5002R PF5004R)

    SSIE1420

    Abstract: SSiE1210 SSIE1120 aeg diode SSiE1410 ssie1220 ssie1110 TRA1110 SSIE1205 D6050J
    Text: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number Manufacturer lo Max VRRM •FSM Max A 00 (A) 00 VF IF @ IR Test (A) IR VR 25 °C @ (A) Test (V) (A) @ T2 Test CO 'Opar Max (°C) Package Style General-Purpose, lo >= 25 A (Cont'd) . . . .5 . . . .10


    Original     		PDF As-13 Press-13 Disc-10 203AB DO-21 SSIE1420 SSiE1210 SSIE1120 aeg diode SSiE1410 ssie1220 ssie1110 TRA1110 SSIE1205 D6050J

    DO21

    Abstract: it 5001 PFW5000 PFW5001 PFW5002 PFW5004 PFW5006 Washer
    Text: PFW5000 – PFW5006 WTE POWER SEMICONDUCTORS Pb 50A 1/2" WASHER LEAD PRESS-FIT DIODE Features ! Diffused Junction ! Low Leakage ! Low Cost ! High Surge Current Capability ! Typical IR less than 5.0µA E Mechanical Data


    Original     		PDF PFW5000 PFW5006 DO-21 PFW5002R PFW5004R) DO21 it 5001 PFW5000 PFW5001 PFW5002 PFW5004 PFW5006 Washer

    DO21

    Abstract: PFW3500 PFW3501 PFW3502 PFW3504 PFW3506 Diode pressfit
    Text: PFW3500 – PFW3506 WTE POWER SEMICONDUCTORS Pb 35A 1/2" WASHER LEAD PRESS-FIT DIODE Features ! Diffused Junction ! Low Leakage ! Low Cost ! High Surge Current Capability ! Typical IR less than 5.0µA E Mechanical Data


    Original     		PDF PFW3500 PFW3506 DO-21 PFW3502R PFW3504R) DO21 PFW3500 PFW3501 PFW3502 PFW3504 PFW3506 Diode pressfit

    Untitled

    Abstract: No abstract text available
    Text: PFW2500 – PFW2506 25A 1/2” WASHER LEAD PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features      Anode + Diffused Junction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA F G C E Mechanical Data    


    Original     		PDF PFW2500 PFW2506 DO-21 PFW2502R PFW2504R)

    Untitled

    Abstract: No abstract text available
    Text: PF3500 – PF3506 WTE POWER SEMICONDUCTORS Pb 35A 1/2" PRESS-FIT DIODE Features  Diffused Junction  Low Leakage A  Low Cost Anode +  High Surge Current Capability  Typical IR less than 5.0µA 


    Original     		PDF PF3500 PF3506 DO-21, PF3502R PF3504R)

    Untitled

    Abstract: No abstract text available
    Text: PFS3500 – PFS3506 35A 1/2” RUGGED LEAD PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction      Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA Rugged 2.54mm Dia. Lead A Anode + Mechanical Data


    Original     		PDF PFS3500 PFS3506 DO-21, PFS3502R PFS3504R)

    DO21

    Abstract: DO-21 PF3504R Diode pressfit PF3500 PF3501 PF3502 PF3504 PF3506 DO21 package
    Text: PF3500 – PF3506 WTE POWER SEMICONDUCTORS Pb 35A 1/2" PRESS-FIT DIODE Features ! Diffused Junction ! Low Leakage A ! Low Cost Anode + ! High Surge Current Capability ! Typical IR less than 5.0µA 


    Original     		PDF PF3500 PF3506 DO-21, PF3502R PF3504R) DO-21 73inaccuracies. DO21 DO-21 PF3504R Diode pressfit PF3500 PF3501 PF3502 PF3504 PF3506 DO21 package

    DO-21

    Abstract: DO21 PF5003 PF5005 DO21 package PF5000 PF5001 PF5002 PF5004 PF5006
    Text: PF5000 – PF5006 WTE POWER SEMICONDUCTORS Pb 50A 1/2" PRESS-FIT DIODE Features ! Diffused Junction ! Low Leakage A ! Low Cost Anode + ! High Surge Current Capability ! Typical IR less than 5.0µA 


    Original     		PDF PF5000 PF5006 DO-21, PF5002R PF5004R) DO-21 73inaccuracies. DO-21 DO21 PF5003 PF5005 DO21 package PF5000 PF5001 PF5002 PF5004 PF5006

    Untitled

    Abstract: No abstract text available
    Text: PFW5000 – PFW5006 WTE POWER SEMICONDUCTORS Pb 50A 1/2" WASHER LEAD PRESS-FIT DIODE Features Anode +  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 5.0µA E


    Original     		PDF PFW5000 PFW5006 DO-21 PFW5002R PFW5004R)

    Untitled

    Abstract: No abstract text available
    Text: PFW3500 – PFW3506 35A 1/2” WASHER LEAD PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features      Anode + Diffused Junction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA F G C E Mechanical Data    


    Original     		PDF PFW3500 PFW3506 DO-21 PFW3502R PFW3504R)

    Untitled

    Abstract: No abstract text available
    Text: PFN3500 – PFN3506 35A 1/2” WEAVING WIRE PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features      Anode + Diffused Junction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA F G C E Mechanical Data   


    Original     		PDF PFN3500 PFN3506 DO-21 PFN3502R PFN3504R)

    Untitled

    Abstract: No abstract text available
    Text: PF2500 – PF2506 25A 1/2” PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA A Anode + Mechanical Data       Case: DO-21, Copper Case and Components


    Original     		PDF PF2500 PF2506 DO-21, PF2502R PF2504R)

    Untitled

    Abstract: No abstract text available
    Text: PFS2500 – PFS2506 25A 1/2” RUGGED LEAD PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction      Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA Rugged 2.54mm Dia. Lead A Anode + Mechanical Data


    Original     		PDF PFS2500 PFS2506 DO-21, PFS2502R PFS2504R)

    Untitled

    Abstract: No abstract text available
    Text: PFS5000 – PFS5006 50A 1/2” RUGGED LEAD PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction      Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA Rugged 2.54mm Dia. Lead A Anode + Mechanical Data


    Original     		PDF PFS5000 PFS5006 DO-21, PFS5002R PFS5004R)

    DO21

    Abstract: PFW2500 PFW2501 PFW2502 PFW2504 PFW2506
    Text: PFW2500 – PFW2506 WTE POWER SEMICONDUCTORS Pb 25A 1/2" WASHER LEAD PRESS-FIT DIODE Features ! Diffused Junction ! Low Leakage ! Low Cost ! High Surge Current Capability ! Typical IR less than 5.0µA E Mechanical Data


    Original     		PDF PFW2500 PFW2506 DO-21 PFW2502R PFW2504R) DO21 PFW2500 PFW2501 PFW2502 PFW2504 PFW2506

    Untitled

    Abstract: No abstract text available
    Text: Standard Recovery Rectifiers Part Number Microscmi Division , Package Outline T,pa Microsemi Mil Data IO VR IFSM VF @ IO Spec Sheet ID Amps (Volts) (Amps) (Volts) IR (uA) | trr | (nsec) 50 2 2 50 2 2 50 50 50 50 50 50 50 10 10 50 10 10 10 10 10 10 10 10


    OCR Scan     		PDF REC-17

    UES2605R

    Abstract: ufr3140 1N6715 UF3060 3150R 1N6716 3140PF 1N671 FR314 1s793
    Text: Microsemi Ultra Fast Rectifiers Microsemi I Division I Part Number Package Outline -I Colorado ' DO-4 Colorado DO-21 Colorado DO-4 Colorado TO-3 Watertown TO-3 Watertown TO-3 Watertown TO-3 Colorado TO-3P Colorado DO-4 Colorado DO-21 Colorado : DO-4 Colorado


    OCR Scan     		PDF UFR3120 UFR3120PF 3120R UFT3120 UES2605 S2605HR UES2605R UF3030 UFR3130 3130PF ufr3140 1N6715 UF3060 3150R 1N6716 3140PF 1N671 FR314 1s793