DO-34 C2 Search Results

HZS6LB2

Abstract: HZS6L
Contextual Info: HZS-L Series Zener Diodes PD : 400 mW DO - 34 Glass Features — — — — High peak reverse power dissipation High reliability Low leakage current Pb / RoHS Free Mechanical Data — — Case: DO-34 Glass Case Weight: approx. 0.093g Dimensions in inches and millimeters

LL00P

Abstract: dd13231 MH88434
Contextual Info: MH88434-P MITEL. Data Access Arrangement Preliminary Information Features FAX and Modem interface V.34/V.34+ E xternally program m able line im pedance Isolation conform s to FCC/DO C requirem ents Transform erless 2-4 W ire conversion O rdering Inform ation

MTZJ 188

Abstract: 05w18 MTZJ SERIES ZENER DIODES 52855 05W1 05W2 05W3 05W4 05WS1 05WS2
Contextual Info: LESHAN RADIO COMPANY, LTD. 1. Feature&Dimension 1.1. DO-34: 单 位: mm CATHODE BAND Φ0.4±0.1 Φ1.8±0.2 29±1 2.7±0.3 29±1 1.2 DO-35 单 位:(mm) CATHODE BAND Φ0.5±0.1 29±1 3.8±0.2 29±1 Φ1.8±0.2 1/8 LESHAN RADIO COMPANY, LTD. 2. ProductCharacteristic

zener db3

Abstract: DIAC-Triac diode zener db3 DB3 ZENER diode diode db3 51 zener japan do-35 DIAC-Triac* 120v diac temperature control circuit diac 40 diac DB-3
Contextual Info: LESHAN RADIO COMPANY, LTD. 1. Feature&Dimension 1.1. DO-34: 单 位: mm CATHODE BAND Φ0.4±0.1 Φ1.8±0.2 29±1 2.7±0.3 29±1 1.2 DO-35 单 位:(mm) CATHODE BAND Φ0.5±0.1 29±1 3.8±0.2 29±1 Φ1.8±0.2 1/6 LESHAN RADIO COMPANY, LTD. BI-DIRECTIONAL TRIGGER DIODES

glass diode yellow band

Abstract: bb809 S0068 diode
Contextual Info: Philips Semiconductors Product specification VHF variable capacitance diode BB809 FEATURES • High linearity • Matched to 3% • Hermetically sealed leaded glass SOD68 DO-34 package fl J—L i tl -H«— MAM1S9 • C28: 4.7 pF; ratio: 9 • Low series resistance.

S0068

Abstract: BB405B
Contextual Info: Product specification Philips Semiconductors UHF variable capacitance diode BB405B FEATURES • Excellent linearity • Matched to 3% [ 1I 1 J • Hermetically sealed leaded glass SOD68 DO-34 package I! D¥h « J i MAM159 • C28: 2 pF; ratio: 8.3 • Low series resistance.

BB910 TO-92S

Abstract: S0068 BB910 diode
Contextual Info: Philips Semiconductors Product specification VHF variable capacitance diode BB910 FEATURES • Excellent linearity ^—11 dm • Matched to 2.5% • Hermetically sealed leaded glass SOD68 DO-34 package 'c=i —m— M A M 234 • C28: 2.5; ratio: 16 • Low series resistance.

Contextual Info: HZS-L Series ZENER DIODES DO - 34 Glass PD : 400 mW FEATURES : * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free 1.00 25.4 min. 0.078 (2.0 )max. 0.118 (3.0) max. Cathode Mark MECHANICAL DATA 1.00 (25.4) min.

Contextual Info: BZV60 SERIES _ A VOLTAGE REGULATOR DIODES Silicon planar diodes in DO-34 envelopes intended for use as low voltage stabilizers or voltage references. They are available in international standardized E24 ± 5% range and ± 2% tolerance range. The series

BZX55C0V8S

Contextual Info: Zener Diodes B Z X 55.S S eries500 mW Zener Diodes DO-34 Glass Package TA = 25 °C Type BZX55-C0V8S 1) BZX55-C2V7S BZX55-C3V0S BZX55-C3V3S BZX55-C3V6S BZX55-C3V9S BZX55-C4V3S BZX55-C4V7S BZX55-C5V1S BZX55-C5V6S BZX55-C6V2S BZX55-C6V8S BZX55-C7V5S BZX55-C8V2S

Variable capacitance diodes

Abstract: S0068 BB909A BB909B 01DS3 glass diode green band
Contextual Info: Philips Semiconductors Product specification VHF variable capacitance diodes BB909A; BB909B FEATURES • Excellent linearity • Matched to 2.5% @ • Hermetically sealed leaded glass SOD68 DO-34 package r 5— H flT l Ir~ = 3 — M — M A M 234 • C28: 2.9 pF; ratio: 13.5

C15 DO-34

Abstract: diode 400mw 4v7 b5v6 BZV60 BZV60-C
Contextual Info: BZV60 SERIES A _ VOLTAGE REGULATOR DIODES Silicon planar diodes in DO-34 envelopes intended fo r use as low voltage stabilizers o r voltage references. They are available in international standardized E24 ± 5% range and ± 2% tolerance range. The series

C15 DO-34

Abstract: B6V2 C3V33
Contextual Info: BZV60 SERIES J \ _ VOLTAGE REGULATOR DIODES Silicon planar diodes in DO-34 envelopes intended fo r use as low voltage stabilizers o r voltage references. They are available in international standardized E24 ± 5% range and ± 2% tolerance range. The series

S0068

Abstract: DO-34 PACKAGE diode
Contextual Info: Product specification Philips Semiconductors VHF variable capacitance diode BB911/A FEATURES • High linearity > ID = ^ • Matched to 2.5% • Hermetically sealed leaded glass SOD68 (DO-34 package - M - M A M 234 • C28: 2.7 pF; ratio: 25. Cathode side indicated by a red band on a black body.

6621R

Abstract: AWT6621RM45P9 CDMA2000-RC1
Contextual Info: AWT6621 HELP4 UMTS2100 Band 1 WCDMA/CDMA Linear PAM TM Data Sheet - Rev 2.1 FEATURES • Mixed-Mode (HSPA, EV-DO) Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): AWT6621 41 % @ POUT = +28.2 dBm 34 % @ POUT = +17.5 dBm 21 % @ POUT = +13.5 dBm

AWT6621RM45Q7

Contextual Info: AWT6621 HELP4 UMTS2100 Band 1 WCDMA/CDMA Linear PAM TM Data Sheet - Rev 2.0 FEATURES • Mixed-Mode (HSPA, EV-DO) Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): AWT6621 41 % @ POUT = +28.3 dBm 34 % @ POUT = +17.5 dBm 21 % @ POUT = +13.5 dBm

C15 DO-34

Abstract: BZX55c5v1 Series BZX55 BZX55C2V4 BZX55C2V7 BZX55C3V0 BZX55C3V3 BZX55C3V6 BZX55C3V9 BZX55C4V3
Contextual Info: BL GALAXY ELECTRICAL BZX55 - SERIES ZENER DIODES POWER DISSIPATION: 500 mW FEATURES DO-34 GLASS Silicon planar power zener diodes The zener voltages are graded according to the international E 24 standard. Standard zener voltage tolerance is ±5%. Replace suffix "C" with "B" for ±2%,

Contextual Info: AWT6622 TM HELP4 UMTS1900 Band 2 CDMA/WCDMA 28.6 dBm Linear PAM DATA SHEET - Rev 2.4 FEATURES • Mixed-Mode (HSPA, EV-DO compliant) • 4th Generation HELPTM technology • High Eficiency (R99 waveform): • 40 % @ POUT = +28.6 dBm • 34 % @ POUT = +17 dBm

Contextual Info: AWT6622 HELP4 UMTS1900 Band 2 CDMA/WCDMA 28.8 dBm Linear PAM TM PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • Mixed-Mode (HSPA, EV-DO compliant) • 4th Generation HELPTM technology • High Efficiency (R99 waveform): AWT6622 41 % @ POUT = +28.8 dBm 34 % @ POUT = +17 dBm

Contextual Info: AWT6622 HELP4 UMTS1900 Band 2 CDMA/WCDMA 28.6 dBm Linear PAM TM DATA SHEET - Rev 2.4 FEATURES • Mixed-Mode (HSPA, EV-DO compliant) • 4th Generation HELPTM technology • High Efficiency (R99 waveform): • 40 % @ POUT = +28.6 dBm • 34 % @ POUT = +17 dBm

UMTS1900

Contextual Info: AWT6622 HELP4 UMTS1900 Band 2 CDMA/WCDMA 28.6 dBm Linear PAM TM DATA SHEET - Rev 2.4 FEATURES • Mixed-Mode (HSPA, EV-DO compliant) • 4th Generation HELPTM technology • High Efficiency (R99 waveform): • 40 % @ POUT = +28.6 dBm • 34 % @ POUT = +17 dBm

6621R

Abstract: AWT6621RM45Q7 HELP4TM UMTS2100 awt6621rm45p9
Contextual Info: AWT6621 HELP4 UMTS2100 Band 1 WCDMA/CDMA Linear PAM TM Data Sheet - Rev 2.2 FEATURES • Mixed-Mode (HSPA, EV-DO) Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): AWT6621 41 % @ POUT = +28.2 dBm 34 % @ POUT = +17.5 dBm 21 % @ POUT = +13.5 dBm

UMTS1900

Abstract: AWT6622R
Contextual Info: AWT6622 HELP4 UMTS1900 Band 2 CDMA/WCDMA 28.6 dBm Linear PAM TM DATA SHEET - Rev 2.3 FEATURES • Mixed-Mode (HSPA, EV-DO compliant) • 4th Generation HELPTM technology • High Efficiency (R99 waveform): • 40 % @ POUT = +28.6 dBm • 34 % @ POUT = +17 dBm

AWT6622

Contextual Info: AWT6622 HELP4 UMTS1900 Band 2 CDMA/WCDMA 28.6 dBm Linear PAM TM PRELIMINARY DATA SHEET - Rev 2.0 FEATURES • Mixed-Mode (HSPA, EV-DO compliant) • 4th Generation HELPTM technology • High Efficiency (R99 waveform): AWT6622 40 % @ POUT = +28.6 dBm 34 % @ POUT = +17 dBm