DMOS TRANSISTORS Search Results

Contextual Info: L6207Q DMOS dual full bridge driver Datasheet - production data Description The L6207Q device is a DMOS dual full bridge driver designed for motor control applications, realized in BCDmultipower technology, which combines isolated DMOS power transistors with

DN3145

Abstract: DN3145N8 DATE CODE FOR SUPERTEX
Contextual Info: DN3145 Initial Release N-Channel Depletion-Mode Vertical DMOS FETs Features Advanced DMOS Technology ❏ High input impedance These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces

DN2640

Abstract: DN2640N3 DN2640ND
Contextual Info: DN2640 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 400V 6.0Ω 300mA Order Number / Package TO-92 Die DN2640N3 DN2640ND Advanced DMOS Technology Features These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven

TN0702N3

Abstract: TN0702
Contextual Info: TN0702 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON ID(ON) VGS(th) BVDGS (max) (min) (max) TO-92 20V 1.3Ω 0.5A 1.0V TN0702N3 7 Features Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven

DN2640

Abstract: DN2640N3 DN2640ND
Contextual Info: – E T E L O S B O – DN2640 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 400V 6.0Ω 300mA Order Number / Package TO-92 Die DN2640N3 DN2640ND Advanced DMOS Technology Features These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven

Contextual Info: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing

Contextual Info: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET General Description Features These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing

transistor s70

Abstract: Marking S70 pin
Contextual Info: DMOS Transistors N-Channel Enhancement-Mode DMOS Transistors =TO-92 Plastic Package Type Pin Config. Maximum Drain-Source Voltage Maximum Continuous Drain Current Max. Power Dissipation at Tc = 25 °C Drain-Source ON Resistance ') Gate Threshold Voltage

voltage drop circuit from 220V to 10V

Abstract: SOT89 FET marking diode p3c TP5322 TP5322K1 TP5322K1-G TP5322N8 FAST DMOS FET Switches MOS P-Channel SOT23 fet sot-89 marking code
Contextual Info: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This

D4710

Contextual Info: 100MHz CMOS/DMOS Wideband Quad Analog Switch CORPORATION CWB201 FEATURES DESCRIPTION APPLICATIONS Designed for RF and Video Switching the CWB201 is manufactured using Calogic’s high speed CMOS combined with DMOS transistors in a monolithic design resulting in

DN5m

Abstract: sot-89 marking dn
Contextual Info: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

125OC

Abstract: TN1504 TN1504NW TN1506 TN1506NW TN1510 TN1510NW
Contextual Info: TN1504/TN1506/TN1510 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Features ► ► ► ► ► ► ► ► General Description These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s

Contextual Info: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

FAST DMOS FET Switches n-CHANNEL

Abstract: fet free mos 926 FAST DMOS FET Switches p-CHANNEL VC0106 FAST DMOS FET Switches FET P-Channel Switch P-Channel Enhancement FET P-Channel Enhancement Mode Vertical DMOS FET VC0106N6
Contextual Info: VC0106 Complementary Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON (max) Q1 + Q2 or Q3 + Q4 60V 11Ω Order Number / Package 14-Pin P-Dip VC0106N6 Features Advanced DMOS Technology • 4 independent channels These enhancement-mode (normally-off) DMOS FET arrays

125OC

Abstract: TN1504 TN1504NW TN1506 TN1506NW TN1510 TN1510NW
Contextual Info: TN1504/TN1506/TN1510 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Features ► ► ► ► ► ► ► ► General Description These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s

DSFP-DN3545

Contextual Info: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

DN5MW

Abstract: DN3545 DN3545N3-G DN3545N8-G 10W010
Contextual Info: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

VN3205N6

Abstract: diode marking CODE VN G1 vn2lw VN3205 SOT89 MARKING CODE 43 diode marking CODE VN S2
Contextual Info: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination

siemens fet to92

Abstract: dn5mw 125OC DN3545 DN3545N3-G DN3545N8-G
Contextual Info: Supertex inc. DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

mos die

Abstract: DN2624 DN2624N3 DN2624ND
Contextual Info: DN2624 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 Die 240V 4.0Ω 600mA DN2624N3 DN2624ND Advanced DMOS Technology Features These low threshold depletion-mode (normally-on) transistors

IN4625

Abstract: TN2540N8 TP2640N3 P-Channel Depletion-Mode N-Channel Depletion-Mode MOSFET high voltage MOSFET 400V LND150N3
Contextual Info: Application Note AN-D27 DMOS Devices For Telecommunications Supertex DMOS transistors provide rugged and efficient solutions for various functions for telecommunication applications. Their combined features of high breakdown voltage, low threshold voltage, low on-resistance, and low input capacitance are the

MOSFET 400V

Abstract: P-Channel Depletion-Mode 400v p-channel mosfet depletion 400V power mosfet Depletion MOSFET depletion power MOSFET 400V P-Channel mosfet 400v P-channel mosfet 500V mosfet transistors low voltage
Contextual Info: Application Note AN-D27 DMOS Devices For Telecommunications Supertex DMOS transistors provide rugged and efficient solutions for various functions for telecommunication applications. Their combined features of high breakdown voltage, low threshold voltage, low on-resistance, and low input capacitance are the

DN5MW

Abstract: DN3545 DN3545N3-G DN3545N8-G
Contextual Info: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

2N6661

Contextual Info: 2N6661 90V N-channel Enhancement - Mode Vertical DMOS FET 7.95 Transistors MO. Page 1 of 1 Enter Your Part # Home Part Number: 2N6661 Online Store 2N6661 Diodes 90V N -channel Enhancement - Mode Vertical DMOS FET Transistors Integrated Circuits Optoelectronics