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    DMOS TRANSISTOR Search Results

    DMOS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    DMOS TRANSISTOR Price and Stock

    Nexperia BSS84,215

    MOSFETs SOT23 P CHAN 50V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BSS84,215 Reel 723,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0291
    		Buy Now

    DMOS TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: L6207Q DMOS dual full bridge driver Datasheet - production data Description The L6207Q device is a DMOS dual full bridge driver designed for motor control applications, realized in BCDmultipower technology, which combines isolated DMOS power transistors with


    Original     		L6207Q L6207Q VFQFPN48 DocID018993 PDF

    DN3145

    Abstract: DN3145N8 DATE CODE FOR SUPERTEX
    Text: DN3145 Initial Release N-Channel Depletion-Mode Vertical DMOS FETs Features Advanced DMOS Technology ❏ High input impedance These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces


    Original     		DN3145 100mA, 100mA DN3145 DN3145N8 DATE CODE FOR SUPERTEX PDF

    LDMOS

    Abstract: No abstract text available
    Text: POLYFET RF DEVICES LDMOS Lateral Double Diffuse MOS Transistor The Next Generation polyfet rf devices 1 DMOS Technology • Vertical DMOS 9 Lateral DMOS • Bottom Side Drain • Source bond wire reducing gain • Higher Crss • BEO isolation • High Package Cost


    Original     		L88081 L88082 L88013 L88012 L88008 L88007 L88016 L88026 1000Mhz LDMOS PDF

    DN2640

    Abstract: DN2640N3 DN2640ND
    Text: DN2640 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 400V 6.0Ω 300mA Order Number / Package TO-92 Die DN2640N3 DN2640ND Advanced DMOS Technology Features These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven


    Original     		DN2640 300mA DN2640N3 DN2640ND 200mA, 200mA DN2640 DN2640N3 DN2640ND PDF

    TN0702N3

    Abstract: TN0702
    Text: TN0702 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON ID(ON) VGS(th) BVDGS (max) (min) (max) TO-92 20V 1.3Ω 0.5A 1.0V TN0702N3 7 Features Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven


    Original     		TN0702 TN0702N3 500mA 200pF TN0702N3 TN0702 PDF

    Untitled

    Abstract: No abstract text available
    Text: TB62003,004,006~009P/F TOSHIBA Bi−CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TB62003P,TB62003F,TB62004P,TB62004F TB62006P,TB62006F,TB62007P,TB62007F TB62008P,TB62008F,TB62009P,TB62009F 8CH DMOS TRANSISTOR ARRAY WITH GATE TB62003P, TB62003F INVERTER & DMOS DRIVER


    Original     		TB62003 009P/F TB62003P TB62003F TB62004P TB62004F TB62006P TB62006F TB62007P TB62007F PDF

    Untitled

    Abstract: No abstract text available
    Text: TB62003,004,006～009P/F TOSHIBA Bi−CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TB62003P,TB62003F,TB62004P,TB62004F TB62006P, TB62006F,TB62007P,TB62007F TB62008P,TB62008F, TB62009P,TB62009F 8CH DMOS TRANSISTOR ARRAY WITH GATE TB62003P, TB62003F INVERTER & DMOS DRIVER


    Original     		TB62003 006009P/F TB62003P TB62003F TB62004P TB62004F TB62006P, TB62006F TB62007P TB62007F PDF

    Untitled

    Abstract: No abstract text available
    Text: TP2502 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original     		TP2502 125pF DSFP-TP2502 A022309 PDF

    DN2640

    Abstract: DN2640N3 DN2640ND
    Text: – E T E L O S B O – DN2640 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 400V 6.0Ω 300mA Order Number / Package TO-92 Die DN2640N3 DN2640ND Advanced DMOS Technology Features These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven


    Original     		DN2640 300mA DN2640N3 DN2640ND 200mA, 200mA DN2640 DN2640N3 DN2640ND PDF

    Untitled

    Abstract: No abstract text available
    Text: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing


    Original     		TP5322 110pFmax. -100mA -200mA DSFP-TP5322 NR041105 PDF

    Untitled

    Abstract: No abstract text available
    Text: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET General Description Features These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing


    Original     		TP5322 110pFmax. -100mA -200mA DSFP-TP5322 NR011905 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VP2450 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		VP2450 DSFP-VP2450 B082613 PDF

    2N6661

    Abstract: No abstract text available
    Text: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		2N6661 2N6661 DSFP-2N6661 C042711 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TN2640 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		TN2640 DSFP-TN2640 C071913 PDF

    marking oc diode sot89

    Abstract: No abstract text available
    Text: Supertex inc. VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		VP3203 DSFP-VP3203 B082613 marking oc diode sot89 PDF

    Untitled

    Abstract: No abstract text available
    Text: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.


    Original     		DN2530 DN2530 DSFP-DN2530 A103108 PDF

    voltage drop circuit from 220V to 10V

    Abstract: SOT89 FET marking diode p3c TP5322 TP5322K1 TP5322K1-G TP5322N8 FAST DMOS FET Switches MOS P-Channel SOT23 fet sot-89 marking code
    Text: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This


    Original     		TP5322 110pFmax. -100mA -200mA DSFP-TP5322 A042005 voltage drop circuit from 220V to 10V SOT89 FET marking diode p3c TP5322 TP5322K1 TP5322K1-G TP5322N8 FAST DMOS FET Switches MOS P-Channel SOT23 fet sot-89 marking code PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.


    Original     		2N6660 2N6660 DSFP-2N6660 C031411 PDF

    D4710

    Abstract: No abstract text available
    Text: 100MHz CMOS/DMOS Wideband Quad Analog Switch CORPORATION CWB201 FEATURES DESCRIPTION APPLICATIONS Designed for RF and Video Switching the CWB201 is manufactured using Calogic’s high speed CMOS combined with DMOS transistors in a monolithic design resulting in


    Original     		100MHz CWB201 CWB201 100MHz D4710 PDF

    e041

    Abstract: No abstract text available
    Text: Supertex inc. DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The Supertex DN2540 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate


    Original     		DN2540 DN2540 DSFP-DN2540 B041310 e041 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces


    Original     		TN0106 DSFP-TN0106 B080811 PDF

    sot 23 x 316

    Abstract: fet sot-89 marking code sot-89 MARKING CODE ab TN5325 TN5325K1-G TN5325N3-G TN5325N8-G jedec sot-23
    Text: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		TN5325 DSFP-TN5325 A052009 sot 23 x 316 fet sot-89 marking code sot-89 MARKING CODE ab TN5325 TN5325K1-G TN5325N3-G TN5325N8-G jedec sot-23 PDF

    transistor

    Abstract: transistor ITT BC548 pnp transistor transistor pnp BC337 pnp transistor pnp bc547 transistor BC327 NPN transistor MPSA92 168 transistor 206 2n3904 TRANSISTOR PNP
    Text: Alphanumerical List of Types TVpe Page 2N3904 2N3906 2N4124 2N4126 2N7000 2N7002 Small-Signal Transistor NPN Small-Signal Transistor (PNP) Small-Signal Transistor (NPN) Small-Signal Transistor (PNP) DMOS Transistor (N-Channel) DMOS Transistor (N-Channel)


    OCR Scan     		2N3904 2N3906 2N4124 2N4126 2N7000 2N7002 BC327 BC328 BC337 BC338 transistor transistor ITT BC548 pnp transistor transistor pnp BC337 pnp transistor pnp bc547 transistor BC327 NPN transistor MPSA92 168 transistor 206 2n3904 TRANSISTOR PNP PDF

    transistor s70

    Abstract: Marking S70 pin
    Text: DMOS Transistors N-Channel Enhancement-Mode DMOS Transistors =TO-92 Plastic Package Type Pin Config. Maximum Drain-Source Voltage Maximum Continuous Drain Current Max. Power Dissipation at Tc = 25 °C Drain-Source ON Resistance ') Gate Threshold Voltage


    OCR Scan     		BS108 BS123 BS170 2N7000 O-236 BS850 transistor s70 Marking S70 pin PDF