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    DMOS TRANSISTOR Search Results

    DMOS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
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    DMOS TRANSISTOR Price and Stock

    Nexperia BSS84,215

    MOSFETs SOT23 P CHAN 50V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BSS84,215 Reel 711,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0276
    		Buy Now

    DMOS TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: L6207Q DMOS dual full bridge driver Datasheet - production data Description The L6207Q device is a DMOS dual full bridge driver designed for motor control applications, realized in BCDmultipower technology, which combines isolated DMOS power transistors with


    Original     		L6207Q L6207Q VFQFPN48 DocID018993 PDF

    DN3145

    Abstract: DN3145N8 DATE CODE FOR SUPERTEX
    Text: DN3145 Initial Release N-Channel Depletion-Mode Vertical DMOS FETs Features Advanced DMOS Technology ❏ High input impedance These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces


    Original     		DN3145 100mA, 100mA DN3145 DN3145N8 DATE CODE FOR SUPERTEX PDF

    LDMOS

    Abstract: No abstract text available
    Text: POLYFET RF DEVICES LDMOS Lateral Double Diffuse MOS Transistor The Next Generation polyfet rf devices 1 DMOS Technology • Vertical DMOS 9 Lateral DMOS • Bottom Side Drain • Source bond wire reducing gain • Higher Crss • BEO isolation • High Package Cost


    Original     		L88081 L88082 L88013 L88012 L88008 L88007 L88016 L88026 1000Mhz LDMOS PDF

    DN2640

    Abstract: DN2640N3 DN2640ND
    Text: DN2640 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 400V 6.0Ω 300mA Order Number / Package TO-92 Die DN2640N3 DN2640ND Advanced DMOS Technology Features These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven


    Original     		DN2640 300mA DN2640N3 DN2640ND 200mA, 200mA DN2640 DN2640N3 DN2640ND PDF

    TN0702N3

    Abstract: TN0702
    Text: TN0702 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON ID(ON) VGS(th) BVDGS (max) (min) (max) TO-92 20V 1.3Ω 0.5A 1.0V TN0702N3 7 Features Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven


    Original     		TN0702 TN0702N3 500mA 200pF TN0702N3 TN0702 PDF

    Untitled

    Abstract: No abstract text available
    Text: TB62003,004,006~009P/F TOSHIBA Bi−CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TB62003P,TB62003F,TB62004P,TB62004F TB62006P,TB62006F,TB62007P,TB62007F TB62008P,TB62008F,TB62009P,TB62009F 8CH DMOS TRANSISTOR ARRAY WITH GATE TB62003P, TB62003F INVERTER & DMOS DRIVER


    Original     		TB62003 009P/F TB62003P TB62003F TB62004P TB62004F TB62006P TB62006F TB62007P TB62007F PDF

    Untitled

    Abstract: No abstract text available
    Text: TB62003,004,006～009P/F TOSHIBA Bi−CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TB62003P,TB62003F,TB62004P,TB62004F TB62006P, TB62006F,TB62007P,TB62007F TB62008P,TB62008F, TB62009P,TB62009F 8CH DMOS TRANSISTOR ARRAY WITH GATE TB62003P, TB62003F INVERTER & DMOS DRIVER


    Original     		TB62003 006009P/F TB62003P TB62003F TB62004P TB62004F TB62006P, TB62006F TB62007P TB62007F PDF

    Untitled

    Abstract: No abstract text available
    Text: TP2502 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original     		TP2502 125pF DSFP-TP2502 A022309 PDF

    DN2640

    Abstract: DN2640N3 DN2640ND
    Text: – E T E L O S B O – DN2640 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 400V 6.0Ω 300mA Order Number / Package TO-92 Die DN2640N3 DN2640ND Advanced DMOS Technology Features These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven


    Original     		DN2640 300mA DN2640N3 DN2640ND 200mA, 200mA DN2640 DN2640N3 DN2640ND PDF

    Untitled

    Abstract: No abstract text available
    Text: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing


    Original     		TP5322 110pFmax. -100mA -200mA DSFP-TP5322 NR041105 PDF

    Untitled

    Abstract: No abstract text available
    Text: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET General Description Features These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing


    Original     		TP5322 110pFmax. -100mA -200mA DSFP-TP5322 NR011905 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VP2450 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		VP2450 DSFP-VP2450 B082613 PDF

    2N6661

    Abstract: No abstract text available
    Text: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		2N6661 2N6661 DSFP-2N6661 C042711 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TN2640 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		TN2640 DSFP-TN2640 C071913 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicongate manufacturing process. This combination produces a


    Original     		VN10K DSFP-VN10K B031411 PDF

    marking oc diode sot89

    Abstract: No abstract text available
    Text: Supertex inc. VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		VP3203 DSFP-VP3203 B082613 marking oc diode sot89 PDF

    transistor s70

    Abstract: Marking S70 pin
    Text: DMOS Transistors N-Channel Enhancement-Mode DMOS Transistors =TO-92 Plastic Package Type Pin Config. Maximum Drain-Source Voltage Maximum Continuous Drain Current Max. Power Dissipation at Tc = 25 °C Drain-Source ON Resistance ') Gate Threshold Voltage


    OCR Scan     		BS108 BS123 BS170 2N7000 O-236 BS850 transistor s70 Marking S70 pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.


    Original     		DN2530 DN2530 DSFP-DN2530 A103108 PDF

    voltage drop circuit from 220V to 10V

    Abstract: SOT89 FET marking diode p3c TP5322 TP5322K1 TP5322K1-G TP5322N8 FAST DMOS FET Switches MOS P-Channel SOT23 fet sot-89 marking code
    Text: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This


    Original     		TP5322 110pFmax. -100mA -200mA DSFP-TP5322 A042005 voltage drop circuit from 220V to 10V SOT89 FET marking diode p3c TP5322 TP5322K1 TP5322K1-G TP5322N8 FAST DMOS FET Switches MOS P-Channel SOT23 fet sot-89 marking code PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.


    Original     		2N6660 2N6660 DSFP-2N6660 C031411 PDF

    D4710

    Abstract: No abstract text available
    Text: 100MHz CMOS/DMOS Wideband Quad Analog Switch CORPORATION CWB201 FEATURES DESCRIPTION APPLICATIONS Designed for RF and Video Switching the CWB201 is manufactured using Calogic’s high speed CMOS combined with DMOS transistors in a monolithic design resulting in


    Original     		100MHz CWB201 CWB201 100MHz D4710 PDF

    e041

    Abstract: No abstract text available
    Text: Supertex inc. DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The Supertex DN2540 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate


    Original     		DN2540 DN2540 DSFP-DN2540 B041310 e041 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces


    Original     		TN0106 DSFP-TN0106 B080811 PDF

    sot 23 x 316

    Abstract: fet sot-89 marking code sot-89 MARKING CODE ab TN5325 TN5325K1-G TN5325N3-G TN5325N8-G jedec sot-23
    Text: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		TN5325 DSFP-TN5325 A052009 sot 23 x 316 fet sot-89 marking code sot-89 MARKING CODE ab TN5325 TN5325K1-G TN5325N3-G TN5325N8-G jedec sot-23 PDF