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    DMG3415U Price and Stock

    Diodes Incorporated DMG3415UFY4Q-7

    MOSFET P-CH 16V 2.5A X2-DFN2015
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    DigiKey DMG3415UFY4Q-7 Digi-Reel 49,040 1
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    DMG3415UFY4Q-7 Cut Tape 49,040 1
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    DMG3415UFY4Q-7 Reel 45,000 3,000
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    Diodes Incorporated DMG3415U-7

    MOSFET P-CH 20V 4A SOT23-3
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    DigiKey DMG3415U-7 Cut Tape 27,902 1
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    DMG3415U-7 Digi-Reel 27,902 1
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    DMG3415U-7 Reel 27,000 3,000
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    Quest Components DMG3415U-7 4,800
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    Diodes Incorporated DMG3415UQ-7

    MOSFET BVDSS: 8V~24V SOT23 T&R 3
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    DigiKey DMG3415UQ-7 Digi-Reel 2,723 1
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    Mouser Electronics DMG3415UQ-7 13,783
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    Arrow Electronics DMG3415UQ-7 78,000 12 Weeks 3,000
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    Diodes Incorporated DMG3415U-13

    MOSFET P-CH DFN-3
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    Diodes Incorporated DMG3415UFY4-7

    MOSFET P-CH 16V 2.5A DFN2015H4-3
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    DigiKey DMG3415UFY4-7 Reel 3,000
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    Find more DMG3415U price and stock on Findchips.com

    DMG3415U Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DMG3415U Diodes Incorporated P-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    DMG3415U-13 Diodes MOSFET P-CH DFN-3 Original PDF
    DMG3415U-7 Diodes Incorporated FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4A SOT-23 Original PDF
    DMG3415U-7 TY Semiconductor MOSFET P-CH 20V 4A - SOT-23 Original PDF
    DMG3415UFY4 Diodes Incorporated P-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    DMG3415UFY4-7 Diodes Incorporated FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 16V 2.5A DFN-3 Original PDF
    DMG3415UFY4Q-7 Diodes Incorporated Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 16V 2.5A X2-DFN2015 Original PDF
    DMG3415UFY4Q-7-52 Diodes MOSFET BVDSS: 8V~24V X2-DFN2015- Original PDF
    DMG3415UQ-7 Diodes MOSFET BVDSS: 8V~24V SOT23 T&R 3 Original PDF

    DMG3415U Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DMG3415U-13

    Abstract: "marking code" 34P sot23 marking code YW DIODE marking 34P sot23
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMG3415U AEC-Q101 DS31735 DMG3415U-13 "marking code" 34P sot23 marking code YW DIODE marking 34P sot23

    "marking code" 34P sot23

    Abstract: marking 34P sot23
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V Features • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMG3415U AEC-Q101 DS31735 "marking code" 34P sot23 marking 34P sot23

    marking 34P sot 23

    Abstract: DMG3415U "marking code" 34P sot23 dmg3415u-7 J-STD-020D marking code 34P
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 42.5mΩ @ VGS = -4.5V • 53mΩ @ VGS = -2.5V • 71mΩ @ VGS = -1.8V


    Original     		PDF DMG3415U AEC-Q101 OT-23 J-STD-020D DS31735 marking 34P sot 23 DMG3415U "marking code" 34P sot23 dmg3415u-7 J-STD-020D marking code 34P

    Untitled

    Abstract: No abstract text available
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMG3415U DS31735

    DMG3415UQ-7

    Abstract: DMG3415U-7 DS31735 marking 34P sot23
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMG3415U AEC-Q101 DS31735 621-DMG3415U-7 DMG3415U-7 DMG3415UQ-7 DMG3415U-7 marking 34P sot23

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMG3415U

    DMG3415U

    Abstract: marking 34P sot 23 dmg3415u-7 YM 294 J-STD-020D
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 39mΩ @ VGS = -4.5V • 52mΩ @ VGS = -2.5V • 65mΩ @ VGS = -1.8V


    Original     		PDF DMG3415U AEC-Q101 OT-23 J-STD-020D DS31735 DMG3415U marking 34P sot 23 dmg3415u-7 YM 294 J-STD-020D

    Untitled

    Abstract: No abstract text available
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS R DS(on) max -20V 42.5mΩ @ V GS = -4.5V 71mΩ @ V GS = -1.8V ID T A = +25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (R DS(ON) ) and yet maintain superior switching


    Original     		PDF DMG3415U AEC-Q101 DS31735

    Untitled

    Abstract: No abstract text available
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V ID TA = +25°C -4.0A -2.0A Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage


    Original     		PDF DMG3415U AEC-Q101 DS31735

    Untitled

    Abstract: No abstract text available
    Text: DMG3415UFY4 N EW PRODU CT P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 39mΩ @ VGS = -4.5V • 52mΩ @ VGS = -2.5V • 65mΩ @ VGS = -1.8V Low Input Capacitance Fast Switching Speed


    Original     		PDF DMG3415UFY4 AEC-Q101 DFN2015H4-3 J-STD-020 DS31842

    marking 34P sot23

    Abstract: No abstract text available
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMG3415U AEC-Q101 DS31735 marking 34P sot23

    Untitled

    Abstract: No abstract text available
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMG3415U AEC-Q101 DS31735

    marking code 34P

    Abstract: DFN2015H4-3 DMG3415U DMG3415UFY4-7
    Text: DMG3415UFY4 P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 39mΩ @ VGS = -4.5V • 52mΩ @ VGS = -2.5V •


    Original     		PDF DMG3415UFY4 AEC-Q101 DFN2015H4-3 J-STD-020 DS31842 marking code 34P DFN2015H4-3 DMG3415U DMG3415UFY4-7

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    complementary MOSFET TO252

    Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
    Text: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and


    Original     		PDF D-81541 A1103-04, complementary MOSFET TO252 zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4

    DMN62D4SDW-7

    Abstract: ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information DMG2307L Analog devices marking Information Analog devices marking DMN2027USS-13 a/ANALOG DEVICES ASSEMBLY DATE CODE TL432BSA-7 DJT4031N
    Text: DATE: 29th April, 2013 PCN #: 2094 – Rev01 PCN Title: Qualification of "Diodes Technology Cheng Du Company Limited" (DTC) as an Additional Assembly & Test Site for SOP-8, SOT-23, SOT223, SOT-323, SOT-363, SSOT-23, and SOD-323 Packaged Parts,


    Original     		PDF Rev01 OT-23, OT223, OT-323, OT-363, SSOT-23, OD-323 PCN-2061 PCN-2070. OD-323 DMN62D4SDW-7 ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information DMG2307L Analog devices marking Information Analog devices marking DMN2027USS-13 a/ANALOG DEVICES ASSEMBLY DATE CODE TL432BSA-7 DJT4031N

    DMG1012

    Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
    Text: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS


    Original     		PDF A1103-04, DMG1012 ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8

    Untitled

    Abstract: No abstract text available
    Text: DCS/PCN-1153 Rev00 PRODUCT CHANGE NOTICE Initial Final Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: December 11, 2009 Immediate Discrete Semiconductors Specification Change 1153 Rev 00 TITLE Datasheet Revision Due to Relaxation of Max Rds On Specification Limit


    Original     		PDF DCS/PCN-1153 Rev00 DW-064

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502

    zxczm800

    Abstract: SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA
    Text: Corporate Address: 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (ROHS) 2002/95/EC Waste Electrical and Electronic Equipment (WEEE)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC SJ/T11363-2006 zxczm800 SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA