NT5TU64M8EE-AC
Abstract: NT5TU32M16EG-AC NT5TU32M16EG-ACI
Text: DDR2 512Mb SDRAM Nanya Technology Corp. NT5TU64M8EE / NT5TU32M16EG NT5TU64M8EE / NT5TU32M16EG Commercial and Industrial DDR2 512Mb SDRAM Features JEDEC DDR2 Compliant Data Integrity - Double-data rate on DQs, DQS, DM bus - Auto Refresh and Self Refresh Modes
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NT5TU64M8EE
NT5TU32M16EG
6-10per)
NT5TU64M8EE-AC
NT5TU32M16EG-AC
NT5TU32M16EG-ACI
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NT5TU64M8EE-AC
Abstract: No abstract text available
Text: DDR2 512Mb SDRAM Nanya Technology Corp. NT5TU64M8EE / NT5TU32M16EG NT5TU64M8EE / NT5TU32M16EG Commercial and Industrial DDR2 512Mb SDRAM Features JEDEC DDR2 Compliant Data Integrity - Double-data rate on DQs, DQS, DM bus - Auto Refresh and Self Refresh Modes
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512Mb
NT5TU64M8EE
NT5TU32M16EG
6-10per)
NT5TU64M8EE-AC
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Untitled
Abstract: No abstract text available
Text: DDR2 256Mb SDRAM Nanya Technology Corp. NT5TU32M8BE / NT5TU16M16BG NT5TU32M8BE / NT5TU16M16BG Commercial and Industrial DDR2 256Mb SDRAM Features JEDEC DDR2 Compliant Data Integrity - Double-data rate on DQs, DQS, DM bus - Auto Refresh and Self Refresh Modes
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256Mb
NT5TU32M8BE
NT5TU16M16BG
6-10per)
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NT5TU32M16
Abstract: No abstract text available
Text: DDR2 512Mb SDRAM Nanya Technology Corp. NT5TU64M8EE / NT5TU32M16EG NT5TU64M8EE / NT5TU32M16EG Commercial, Industrial and Automotive DDR2 512Mb SDRAM Features JEDEC DDR2 Compliant Data Integrity - Double-data rate on DQs, DQS, DM bus - Auto Refresh and Self Refresh Modes
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512Mb
NT5TU64M8EE
NT5TU32M16EG
DDR2-800
NT5TU32M16EG-ACA
NT5TU32M16EG-ACH.
DDR2-800/1066
NT5TU32M16
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Untitled
Abstract: No abstract text available
Text: 1Gb DDR2 DDR2 1Gb SDRAM H-Die Nanya Technology Corp. NT5TU128M8HE / NT5TU64M16HG NT5TU128M8HE / NT5TU64M16HG Commercial, Industrial and Automotive DDR2 1Gb SDRAM Features JEDEC DDR2 Compliant Data Integrity - Double-data rate on DQs, DQS, DM bus - Auto Refresh and Self Refresh Modes
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NT5TU128M8HE
NT5TU64M16HG
T5TU64M16HG
NTC-DDR2-128Mb-A-R1
JESD208
JESD79-F)
DDR2-1066
DDR2-1066
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Untitled
Abstract: No abstract text available
Text: 1Gb DDR2 DDR2 1Gb SDRAM H-Die Nanya Technology Corp. NT5TU128M8HE / NT5TU64M16HG NT5TU128M8HE / NT5TU64M16HG Commercial, Industrial and Automotive DDR2 1Gb SDRAM Features JEDEC DDR2 Compliant Data Integrity - Double-data rate on DQs, DQS, DM bus - Auto Refresh and Self Refresh Modes
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NT5TU128M8HE
NT5TU64M16HG
NTC-DDR2-128Mb-A-R1
JESD208
JESD79-F)
DDR2-1066
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101308
Abstract: No abstract text available
Text: Rev: 101308 DS3 4 T 1 0 8 DK Eva luat ion K it for 1 - t o 8 -Port T DM -ove r-Pa cke t I Cs Ge ne ra l De sc ript ion The DS34T108DK is an easy-to-use evaluation kit for the DS34T108 octal TDM-over-Packet IC and for the DS34T101, T102, T104, S101, S102, S104, and
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DS34T108DK
DS34T108
DS34T101,
RS-232
101308
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HL1321AC
Abstract: HL1321BF HL1321DL HL1321DM HLP5400 44-C5B2
Text: HL1321 AC/BF/DL/DM, HLP5400 Description InGaAsP LD The HL1321AC/BF/DL/DM and HLP5400 are 1.3 |am band InGaAsP laser diodes with a double het erostructure. They are suitable as light sources for optical fiber communication systems and various types of optical equipment.
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HL1321
HLP5400
HLP5400)
44Tb205
HL1321AC/BF/DL7DM,
HLP5400
HL1321BF/DL)
HL1321AC
HL1321BF
HL1321DL
HL1321DM
44-C5B2
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SFN451A
Abstract: T-39
Text: 8368602 SOL ITRON DEVICES INC SFN451A 70C 02092 D^ ^DeTJ fl3L,flbD2 QOGHOTS o SWITCH MOS PACKAGE TO -3 POWER MOS MAXIMUM RATINGS SYMBOL VDS XD *DM VGS PD *L ^J oper T „ stg UNITS PARAMETER Voltage, Drain Co Source 450 V Drain Current, Continuous @ Tc«25°C
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SFN451A
1J4-28UNF-ZA
5M6-24UNF-2A
050-MAX.
T-39
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sfnf223
Abstract: 0438F
Text: 8368602 SOLITRON DEVICES INC SFNF223 70C 02042 SWITCH MOS PACKAGE TO -39 ~7Q T-39-09 ' DE~|fl3L,öbDa □□D5D42 b 1"~ POWER MOS MAXIMUM RATINGS *DM V A o Drain Current, Continuous @ T «*25°C c ' Drain Current, Pulsed 150 u> *D Voltage, Drain to Source
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T-39-09
SFNF223
D5D42
5M6-24UNF-2A
P06fTKMOF
eA03AT
sfnf223
0438F
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sfnf203a
Abstract: 10-32 UNF 2A
Text: SOLITRON DEVICES INC ?□ j>if| fl3t,ät:05 □DGEDBl 1 |~T-39-07 SWITCH MOS SFNF203A POWER MOS PACKAGE TO-39 MAXIMUM RATINGS VDS *D *DM VGS PD *L TJ oper T stg UNITS PARAMETER SYMBOL 200 Drain Current, Continuous @ T =25°C c Drain Current, Pulsed 2.5
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T-39-07
SFNF203A
5M6-24UNF-2A
P06fTKM
eA03AT
sfnf203a
10-32 UNF 2A
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sfnf203b
Abstract: No abstract text available
Text: SOLITRON DEVICES INC SFNF203B 70 Dif| fl3bflkOE DOOSOBE 3 "j^T-39-^7 SWITCH MOS PACKAGE TO-39 POWER MOS MAXIMUM RATINGS SYMBOL VDS *D *DM V GS PD XL TJ oper T „ stg UNITS PARAMETER V Voltage, Drain to Source 150 Drain Current, Continuous @ T «25°C
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SFNF203B
250uA
5M6-24UNF-2A
P06fTKM
eA03AT
sfnf203b
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SFN123
Abstract: T-39
Text: 8368602 SOLITRON DEVICES SFN123 INC 70C 02010 D T-39-11 ^ SWITCH MOS "^^Ë TâitatQ a oonaoin m | PACKAGE TO-3 POWER MOS MAXIMUM RATINGS VDS XD *DM VGS PD XL ^J oper T . stg UNITS PARAMETER SYMBOL V Voltage, Drain to Source 60 Drain Current, Continuous @ T =25°C
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T-39-11
SFN123
1J4-28UNF-ZA
5M6-24UNF-2A
050-MAX.
T-39
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SFN132
Abstract: T-39
Text: 8368602 SOLITRON DEVICES 70 »E|ö3bflbDE 00D5G17 7 1 INC 70C 02017 D SWITCH MOS SFN132 POWER M O S MAXIMUM *D *DM VGS PD IL ^J oper T „ stg PACKAGE TO-3 RATINGS UNITS PARAMETER SYMBOL VDS V Voltage, Drain to Source 100 Drain Current, Continuous 0 T =25°C
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t-39-u
SFN132
250uA
1J4-28UNF-ZA
5M6-24UNF-2A
050-MAX.
SFN132
T-39
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82378ib
Abstract: No abstract text available
Text: A P M Ä M ! DM iP© I^[ìfflA'irD@ N] in te i 82378IB SYSTEM I/O SIO Provides the Bridge Between the PCI Bus and ISA Bus Arbitration for PCI Devices — Four PCI Masters are Supported — Fixed, Rotating, or a Combination of the Two 100% PCI and ISA Compatible
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82378IB
IOCS16#
MEMCS16#
82378ib
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SFN351A
Abstract: T-39 SFN351
Text: 8368602 SOLITRON DEVICES SFN351A INC D' 70C 0 2 0 7 2 SWITCH M O S 70 T-39-13 C E l«3tat,os 0002075 4 f PACKAGE TO-3 MAXIMUM RATINGS Voltage, Drain to Source - VDS *D *DM VGS PD *L ^J oper T stg - UNITS PARAMETER SYMBOL ^ Drain Current, Continuous @ T »25°C
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T-39-13
SFN351A
1J4-28UNF-ZA
5M6-24UNF-2A
050-MAX.
T-39
SFN351
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SFN422
Abstract: T-39
Text: 70 8368602 SOLITRON DEVICES INC DE I û3bâbOE □□□aDfll 5 • " n l l M _ OI1 ■ ■ D/ TOC 02081 T-39-11 SWITCH MOS N- SFN422 POWER MOS PACKAGE TO-3 MAXIMUM RATINGS *DM VGS PD XL ^J oper T „ stg 500 Drain Current, Continuous @ T =25°C ’ c
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T-39-11
SFN422
1J4-28UNF-ZA
5M6-24UNF-2A
050-MAX.
SFN422
T-39
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Untitled
Abstract: No abstract text available
Text: 8368602 SOLITRON DEVICES SFN353 INC 7oc 02070 S W IT C H PACKAGE TO-3 MOS T-39-13 0002070 0 T 70 POWER MOS MAXIMUM RATINGS SYMBOL VDS *D *DM VGS PD *L TJ oper T _ stg UNITS PARAMETER Voltage, Drain Co Source Drain Current, Continuous @ T >25°C c • Drain Current, Pulsed
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T-39-13
SFN353
5M6-24UNF-2A
P06fTKM
eA03AT
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sfns101
Abstract: No abstract text available
Text: SOLITRON DEVICES INC ~7D D F | fi3 b flb 0 2 D O O in ? 7 | ~ T '3 5 SWITCH MOS SFNS101C POWER MOS MAXIMUM SYMBOL VDS *D *DM VGS PD IL ^J oper T stg „ PACKAGE TO-52 RATINGS UNITS PARAMETER Voltage, Drain to Source 100 V Drain Current, Continuous @ T *25°C
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SFNS101C
5M6-24UNF-2A
P06fTKM
eA03AT
sfns101
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sfns201
Abstract: No abstract text available
Text: 70 SOLITRON DEVICES INC DE |fl3böt,D5 DQOEOEM 4 | SWITCH MOS SFNS201B POWER MOS PACKAGE TQ-52 MAXIMUM RATINGS VDS *D *DM V GS PD h ^J oper T StR UNITS PARAMETER SYMBOL Voltage, V Drain to Source 150 A D r a i n Current, Continuous @ T =25°C c D r a i n Current, Pulsed
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SFNS201B
TQ-52
5M6-24UNF-2A
P06fTKM
eA03AT
sfns201
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sfn322
Abstract: No abstract text available
Text: 83 pftR n? ~7IQ «ctm n i t t r do kwi n Fr vVTT QQ f&5 si DE I ö3böfeiD5 DQDSOtil D inc 70C 02061 T-39-11 SWITCH MOS SFN322 POWER MOS PACKAGE TO-3 MAXIMUM RATINGS SYMBOL VDS rD *DM VGS PD lL TJ oper T stg * UNITS PARAMETER Voltage, Drain to Source 400
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T-39-11
SFN322
5M6-24UNF-2A
P06fTKM
eA03AT
sfn322
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SFN331
Abstract: T-39 TO228
Text: 8368602 SOL ITRON DEVICES SFN331 INC 70C 02064 SWITCH M O S 70 PACKAGE TO-3 D T-39-11 i>E | fl3tatM o o ü ä Q M s f POWER MOS MAXIMUM RATINGS SYMBOL VDS *D *DM to PD ILTJ oper T stg * UNITS PARAMETER Voltage, Drain Co Source 350 V Drain Current, Continuous @ T •25°C
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T-39-11
SFN331
tc-25Â
1J4-28UNF-ZA
5M6-24UNF-2A
050-MAX.
T-39
TO228
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SFN231
Abstract: T-39
Text: 8368602 SOLITRON DEVICES INC S F N 231 70C 02048 S W IT C H PACKAGE TO-3 Q/ T-39-ll MOS N onoaim i | “ POWER MOS M A X I M U M RATINGS VDS *D *DM VGS PD lL ^J oper T Stf? UNITS PARAMETER SYMBOL V Voltage, Drain to Source 150 Drain Current, Continuous @ Tc*25°C
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T-39-11
SFN231
1J4-28UNF-ZA
5M6-24UNF-2A
050-MAX.
T-39
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APT10M25BNR
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y O D APT10M25BNR 100V APT10M30BNR 100V O s POWER MOS IV® 75A 0.025Í2 75A 0.030Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'dm V GS ^GSM PD T J’ T STG All Ratings: Tc = 25°C unless otherwise specified.
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APT10M25BNR
APT10M30BNR
-10mS
O-247AD
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